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    PNP TRANSISTOR SOT223 Search Results

    PNP TRANSISTOR SOT223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR SOT223 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BCP68

    Abstract: BCP69T1 BCP69T3
    Text: ON Semiconductort BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


    Original     		BCP69T1 OT-223 BCP69T1/D BCP68 BCP69T1 BCP69T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION 1 The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		BD136-138-140 BD136/BD138/BD140 BD135/BD137/ BD139. O-251 OT-223 O-126 O-126C BD136L-xx-T60-K BD136G-xx-T60-K PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended tor cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.


    OCR Scan     		BFQ246 OT223 OT223. BG513 PDF

    MSA035

    Abstract: BFQ246 MSB002
    Text: Philips Semiconductors Preliminary specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.


    OCR Scan     		OT223 7110fl2b BFQ246 MSA035â OT223. 711005t. MSA035 BFQ246 MSB002 PDF

    MPSA93

    Abstract: PZTA92 PZTA93
    Text: UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 3 FEATURES * High Collector-Emitter voltage:


    Original     		PZTA92 PZTA92/93 -300V PZTA92) -200V PZTA93) 1000mW OT-223 PZTA92 PZTA93 MPSA93 PZTA93 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 2 3 FEATURES * High Collector-Emitter voltage:


    Original     		PZTA92 PZTA92/93 -300V PZTA92) -200V PZTA93) 1000mW OT-223 PZTA92 PZTA93 PDF

    TM1102

    Abstract: S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF
    Text: Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 FEATURES DESCRIPTION • Low output capacitance Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. • Fast switching time


    OCR Scan     		PZTM1102 OT223 PZTM1101. 711QfiSb G1G3173 OT223. 7110fiEb TM1102 S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it


    Original     		UP2855 UP2855 OT-223 UP2855L-AA3-R UP2855G-AA3-R QW-R207-024 PDF

    design ideas

    Abstract: TS16949 ZXTN5551G ZXTP5401G
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


    Original     		ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTC ZXTP5401GTA D-81541 design ideas TS16949 ZXTN5551G ZXTP5401G PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


    Original     		ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTA ZXTP5401GTC D-81541 PDF

    TM1102

    Abstract: Schottky diode Die
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTM1102 PNP transistor/Schottky-diode module Product specification File under Discrete Semiconductors, SC01 1996 May 09 Philips Semiconductors Product specification PNP transistor/Schottky-diode module


    Original     		M3D087 PZTM1102 OT223 PZTM1101. TM1102 Schottky diode Die PDF

    TRANSISTOR SMD catalog

    Abstract: TRANSISTOR SMD MARKING CODE MV DIODE smd TRANSISTOR code marking AV "PNP Transistor"
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTM1102 PNP transistor/Schottky-diode module Product specification File under Discrete Semiconductors, SC01 1996 May 09 Philips Semiconductors Product specification PNP transistor/Schottky-diode module


    Original     		M3D087 PZTM1102 PZTM1102 OT223 PZTM1101. TM1102. TRANSISTOR SMD catalog TRANSISTOR SMD MARKING CODE MV DIODE smd TRANSISTOR code marking AV "PNP Transistor" PDF

    SOT223 marking SG

    Abstract: MARKING SG SOT223 marking sot223 GY
    Text: DISCRETE SEMICONDUCTORS SHEET PZT4403 PNP switching transistor Product specification Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Product specification PNP switching transistor FEATURES PZT4403 PINNING • High current max. 600 mA PIN


    OCR Scan     		PZT4403 PZT4403 OT223 PZT4401. ZT4403 OT223) 15002/00/01/pp8 SOT223 marking SG MARKING SG SOT223 marking sot223 GY PDF

    TRANSISTOR SMD MARKING CODE MV DIODE

    Abstract: smd TRANSISTOR code marking AV TM1102 MARKING SMD PNP TRANSISTOR R MAM237 CATALOG TRANSISTOR SMD PNP ZI Marking Code transistor marking code 33 SMD ic "PNP Transistor" Transistor Catalog
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTM1102 PNP transistor/Schottky-diode module Product specification File under Discrete Semiconductors, SC01 1996 May 09 Philips Semiconductors Product specification PNP transistor/Schottky-diode module


    Original     		M3D087 PZTM1102 PZTM1102 OT223 PZTM1101. TM1102. TRANSISTOR SMD MARKING CODE MV DIODE smd TRANSISTOR code marking AV TM1102 MARKING SMD PNP TRANSISTOR R MAM237 CATALOG TRANSISTOR SMD PNP ZI Marking Code transistor marking code 33 SMD ic "PNP Transistor" Transistor Catalog PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT4403 40 V, 600 mA PNP switching transistor Rev. 03 — 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a medium power SOT223 SC-73 small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401.


    Original     		PZT4403 OT223 SC-73) PZT4401. PZT4403 771-PZT4403-T/R PDF

    zxtP

    Abstract: Bv 42 transistor ZXTP2008GTA
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2008G OT223 OT223 ZXTP2008GTA ZXTP2008GTC 522-ZXTP2008GTA ZXTP2008GTA zxtP Bv 42 transistor PDF

    ZXTP19060CG

    Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
    Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		ZXTP19060CG OT223 -80mV ZXTN19060CG OT223 ZXTP19060CGTA D-81541 ZXTP19060CG TS16949 ZXTN19060CG ZXTP19060CGTA PDF

    ZT4403

    Abstract: data sheet transistor PNP NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODES PZT4401 PZT4403 SC-73 MARKING CODE SMD IC
    Text: PZT4403 40 V, 600 mA PNP switching transistor Rev. 03 — 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a medium power SOT223 SC-73 small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401.


    Original     		PZT4403 OT223 SC-73) PZT4401. PZT4403 ZT4403 data sheet transistor PNP NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODES PZT4401 SC-73 MARKING CODE SMD IC PDF

    ZXTP19100CG

    Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
    Text: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		ZXTP19100CG OT223 -100V -130mV ZXTN19100CG OT223 ZXTP19100CGTA D-81541 ZXTP19100CG ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver PDF

    ZXTP25 20V 6A

    Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
    Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		ZXTP25020DG OT223 -65mV ZXTN25020DG OT223 ZXTP25020DGTA D-81541 ZXTP25 20V 6A ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA PDF

    X5T949

    Abstract: sot223 transistor pinout ZX5T949G
    Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T949G OT223 OT223 ZX5T949GTA X5T949 sot223 transistor pinout ZX5T949G PDF

    marking 8A sot223

    Abstract: TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA
    Text: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		ZXTP19020DG OT223 -47mV ZXTN19020DG OT223 ZXTP19020Dex D-81541 marking 8A sot223 TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA PDF

    sot223 transistor pinout

    Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2008G OT223 OT223 ZXTP2008GTA ZXTP2008GTC sot223 transistor pinout sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		ZXTP19020DG OT223 -47mV ZXTN19020DG OT223 D-81541 PDF