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    PNP TRANSISTOR SOT89 Search Results

    PNP TRANSISTOR SOT89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR SOT89 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR SMD CODE PACKAGE SOT89

    Abstract: GHz PNP transistor BFQ149 smd transistor code B2 TRANSISTOR SMD CODE PACKAGE SOT89 4
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ149 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP transistor in a SOT89 envelope.


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    BFQ149 MBK514 TRANSISTOR SMD CODE PACKAGE SOT89 GHz PNP transistor BFQ149 smd transistor code B2 TRANSISTOR SMD CODE PACKAGE SOT89 4 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


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    HE8550 HE8550 HE8050 HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B HE8550-x-T9N-K HE8550L-x-AB3-R PDF

    HE8550G

    Abstract: he8050 HE8550
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


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    HE8550 HE8550 HE8050 HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B HE8550-x-T9N-K HE8550L-x-AB3-R HE8550G he8050 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


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    2SA1013 2SA1013 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B PDF

    2sa1013

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


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    2SA1013 2SA1013 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


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    2SA1013 2SA1013 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B 2SA1013G-x-T9N-B PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


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    HE8550 HE8050 OT-89 QW-R208-014 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose


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    HE8550 HE8050 OT-89 QW-R208-014 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


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    2SB1424 2SB1424 2SB1424G-x-AB3-R OT-89 QW-R208-044 PDF

    031h

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR  DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.


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    HE8550 HE8550 HE8050 HE8550L-x-AB3-R HE8550G-x-AB3-R HE8550L-x-AE3-R HE8550G-x-AE3-R HE8550L-x-T92-B HE8550G-x-T92-B HE8550L-x-T92-K 031h PDF

    high gain low voltage PNP transistor TO-92

    Abstract: 102 TRANSISTOR class B push pull audio amplifier HE8550 he8050 HE855 he8550-x-t92-b Marking BA SOT89
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.


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    HE8550 HE8550 HE8050 HE8550L HE8550G HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B high gain low voltage PNP transistor TO-92 102 TRANSISTOR class B push pull audio amplifier he8050 HE855 he8550-x-t92-b Marking BA SOT89 PDF

    HE8550

    Abstract: he8050
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.


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    HE8550 HE8550 HE8050 HE8550L HE8550G HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B he8050 PDF

    2SB1424

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT „ PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).


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    2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


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    HE8550 OT-89 OT-23 HE8550 HE8050 O-92NL HE8550L HE8550-x-AB3-R HE8550L-x-AB3-R HE8550-x-AE3-R PDF

    MPSA92

    Abstract: No abstract text available
    Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:


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    MPSA92 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW OT-89 MPSA93 PDF

    2w sot-23

    Abstract: he8050 HE8550 small signal transistor HE8550L
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


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    HE8550 OT-89 OT-23 HE8550 HE8050 O-92NL HE8550L HE8550-x-AB3-R HE8550L-x-AB3-R HE8550-x-AE3-R 2w sot-23 he8050 small signal transistor HE8550L PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.


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    2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017 PDF

    MPSA92L

    Abstract: mpsa92 MPSA92-T92-K MPS-A92A MPSA92 datasheet Mpsa92/93 MPSA93 mpsa92g mpsa92a high voltage pnp transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage:


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    MPSA92/93 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92L/MPSA93L MPSA92G/MPSA93G MPSA92-AB3-R MPSA92L mpsa92 MPSA92-T92-K MPS-A92A MPSA92 datasheet MPSA93 mpsa92g mpsa92a high voltage pnp transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage:


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    MPSA92/93 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92L-AB3-R MPSA92G-AB3-R MPSA93L-AB3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage:


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    MPSA92/93 MPSA92/93 -300V MPSA92) -200V MPSA93) 625mW MPSA92L-AB3-R MPSA92G-AB3-R MPSA92L-T92-B PDF

    2SB1260

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.


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    2SB1260 2SB1260 2SB1260L 2SB1260G 2SB1260-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-AB3-R 2SB1260L-x-TN3-R 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating


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    ZXTP5401Z -150V -600mA ZXTN5551Z ZXTP5401ZTA D-81541 PDF

    transistor 1012 TO252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


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    2SB1260 2SB1260 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T OT-89 transistor 1012 TO252 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.


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    2SB1260 2SB1260 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R OT-89 O-252 QW-R208-017 PDF