Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.BASE Symbol 3. EMITTER Parameter Value
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BC327/
BC328
BC327
-100mA
-300mA
-500mA,
-50mA
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BC327
Abstract: BC328 transistor BC328
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value
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BC327/
BC328
BC327
-100mA
-300mA
-500mA,
-50mA
BC327
BC328
transistor BC328
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BC327A
Abstract: Transistor B C 458
Text: BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol
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BC327A
BC327A
Transistor B C 458
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Untitled
Abstract: No abstract text available
Text: BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol
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BC327A
BC327A
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BC327
Abstract: BC328 BC327 equivalent transistor BC328 BC327 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value VCBO Collector-Base Voltage
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BC327/
BC328
BC327
-100mA
-300mA
-500mA,
-50mA
BC327
BC328
BC327 equivalent
transistor BC328
BC327 transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation PCM: TO-92 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current -0.8 A ICM: Collector-base voltage BC327 -50 V
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BC327/
BC328
BC327
BC328
BC327
breakd-45V,
-100mA
-300mA
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BC327
Abstract: No abstract text available
Text: BC327 TO-92 Plastic-Encapsulate Transistor s Transistor PNP TO-92 1.COLLECTOR 2.BASE 3.EMITTER 1 2 3 TYPICAL CHARACTERISTICS -1.0 -1.0 o T A =25 o C T j =25 C V BE (sat)@Ic/I B =10 -0.8 Ic=-500mA -0.6 -0.4 Ic=-300mA -0.2 V VOLTAGE(VOLTS) V CE ,COLLECTOR EMITTER VOLTAGE(VOLTS)
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BC327
-500mA
-300mA
-100mA
-10mA
100us
BC327
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC337/338 1 TO-92 ORDERING INFORMATION Ordering Number
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BC327/328
BC337/338
BC327L-xx-T92-B
BC327G-xx-T92-B
BC327L-xx-T92-K
BC327G-xx-T92-K
BC328L-xx-T92-B
BC328G-xx-T92-B
BC328L-xx-T92-K
BC328G-xx-T92-K
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transistor BC327
Abstract: BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338
Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage
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BC327/328
BC337/BC338
BC327
BC328
transistor BC327
BC307
BC327 PNP transistor download datasheet
100C
BC327
BC328
BC338
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IC 630
Abstract: BC327
Text: DC COMPONENTS CO., LTD. BC327 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter
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BC327
-500mA,
-50mA
-300mA
-100mA,
-300mA,
-10mA,
100MHz
IC 630
BC327
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BC327
Abstract: BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25
Text: BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 2Base 3Emitter J CLASSIFICATION OF hFE 1 A Product-Rank BC327-16
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BC327
BC328
BC327-16
BC327-25
BC328-16
BC328-25
BC328-40
BC327-40
-10mA,
-100mA
BC328
TRANSISTOR BC327-40
BC327 PNP transistor
TRANSISTOR pnp BC328
BC327 transistor
BC328-16
transistor BC328
bc327 datasheet
BC327-25
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transistor bc328
Abstract: TRANSISTOR BC327 equivalent components for transistor bc328 BC327 BC328
Text: BC327…BC328 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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BC327.
BC328
BC327
transistor bc328
TRANSISTOR BC327
equivalent components for transistor bc328
BC327
BC328
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Untitled
Abstract: No abstract text available
Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified
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BC327/328
BC337/338
BC327
BC328
-300mA
-10mA,
20MHz
QW-R201-038
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TRANSISTOR BC327-40
Abstract: bc327 TRANSISTOR
Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified
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BC327/328
BC337/338
BC327
BC328
QW-R201-038
TRANSISTOR BC327-40
bc327 TRANSISTOR
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BC307
Abstract: BC327 BC328 BC338 BC327 W 75
Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC327/328
BC337/BC338
BC327
BC328
BC307
BC327
BC328
BC338
BC327 W 75
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BC307
Abstract: BC338 BC327 BC328
Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC327/328
BC337/BC338
BC327
BC328
BC307
BC338
BC327
BC328
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BC327
Abstract: BC328
Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC327/328
BC337/BC338
BC327
BC328
BC327
BC328
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bc338
Abstract: No abstract text available
Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC327/328
BC337/BC338
BC327
BC328
BC327
bc338
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bc337 fairchild
Abstract: BC337 pnp transistor
Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC327/328
BC337/BC338
BC327
BC328
BC32ugh
bc337 fairchild
BC337 pnp transistor
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BC307
Abstract: 2001 PNP TO-92
Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC327/328
BC337/BC338
BC327
BC328
BC32Product
BC32716TA
BC307
2001 PNP TO-92
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bc327 pnp
Abstract: BC327
Text: BC327 PNP EPITAXIAL PLANAR TRANSISTOR Features KM h H Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,
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BC327
625mW
MIL-STD-202,
DS21708
BC327
bc327 pnp
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BC337 pnp transistor
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA= 2 5 t C haracteristic Sym bol Collector-Em itter Voltage
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BC327/328
BC337/BC338
SC327
BC328
BC327
BC337 pnp transistor
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Untitled
Abstract: No abstract text available
Text: BC327 VISHAY PNP EPITAXIAL PLANAR TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation TO-92 Mechanical Data_
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BC327
625mW
MIL-STD-202,
DS21708
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BC327
Abstract: DS21
Text: BC327 VISHAY PNP EPITAXIAL PLANAR TRANSISTOR /l i t e w i i / POWERSEMICONDUCTOR I Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation TO-92 Mechanical Data
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BC327
625mW
MIL-STD-202,
BC327
DS21
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