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    PNZ202S Search Results

    PNZ202S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PNZ202S Panasonic Phototransistor Module, 100nA Dark Current, 800nm Wavelength Original PDF

    PNZ202S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PN202S

    Abstract: PNZ202S L10324
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 • Features 12.5 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


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    2002/95/EC) PNZ202S PN202S) PN202S PNZ202S L10324 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. M Di ain sc te on na tin nc ue e/ d • Darlington output, high sensitivity


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    2002/95/EC) PNZ202S PN202S) PDF

    Untitled

    Abstract: No abstract text available
    Text: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package


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    PNZ202S PN202S) CTRLR102-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package


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    PNZ202S PN202S) PDF

    PN202S

    Abstract: PNZ202S
    Text: Darlington Phototransistors PNZ202S PN202S Darlington Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes 12.5 min. Small size (ø 3) ceramic package


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    PNZ202S PN202S) PN202S PNZ202S PDF

    Untitled

    Abstract: No abstract text available
    Text: Darlington Phototransistors PNZ202S Darlington Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes 12.5 min. Small size ø 3 ceramic package


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    PNZ202S PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes


    Original
    2002/95/EC) PNZ202S PN202S) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 M Di ain sc te on na tin nc ue e/ d • Features 2.0±0.2 For optical control systems 12.5 min. • Darlington output, high sensitivity


    Original
    2002/95/EC) PNZ202S PN202S) PDF

    PN202

    Abstract: PN202S PNZ202S
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes


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    2002/95/EC) PNZ202S PN202S) PN202 PN202S PNZ202S PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 PDF

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


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    PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F PDF