gunn diode radar
Abstract: police radar detector radar gunn diode motion DOPPLER stereo doppler radar police radar detector detector GUNN OSCILLATORS police radar police radar detector receiver Gunn Diode
Text: M /A-COM 's Commercial Sources Group manufactures a wide range of Gunn Diode based Oscillators, Motion Detection Modules, Voltage Controlled Oscillators and Telecommunication Transmitters and Receivers for short haul terrestrial radio links in Ku and K bands.
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hyperabrupt tuned oscillator
Abstract: missile seeker 4ST520 45331 police radar detector detector 45231 4648-1
Text: M/A-COM TABLE 1 SEMICONDUCTOR PRODUCTS OPERATION • Burlington, MA 01803 • 617 272-3000 Silicon Abrupt Silicon Hyperabrupt G a AS Abrupt G a AS Hyperabrupt Good Fair Best Good Fair Good Fair Best Fair Good Good Best VCO's for Tuned Synthesizers (A) Instruments & Telecommunication
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4ST551
4ST552
4ST553
4ST554
4ST555
4ST556
4ST557
4ST558
4ST559
4ST560
hyperabrupt tuned oscillator
missile seeker
4ST520
45331
police radar detector detector
45231
4648-1
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Avantek mixer sx
Abstract: RF LNA 10 GHz Ground Radar diagram AVANTEK sx s band doppler mixer avantek police radar detector police radar detector detector radar block diagram radar system with circuit diagram
Text: prelim inary d a ta sheet MSF-8870 Silicon Bipolar MMIC Frequency Converter July, 1986 QlAVANTEK O C \< ^ 005143 Avantek 70 Mil Package Features • Up or Down Frequency Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz • Low Phase Noise Self-Oscillating LO From 0.5 to
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ADS-1514/10-86
Avantek mixer sx
RF LNA 10 GHz
Ground Radar diagram
AVANTEK sx
s band doppler mixer
avantek
police radar detector
police radar detector detector
radar block diagram
radar system with circuit diagram
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Untitled
Abstract: No abstract text available
Text: prelim inary d a ta sheet 0AVAN TEK MSF-8870 Silicon Bipolar MMIC Frequency Converter July, 1986 O r\< ^ 005143 > p *0 ^ Avantek 70 Mil Package Features • Up or Down Frequency Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz • Low Phase Noise Self-Oscillating LO From 0.5 to
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MSF-8870
95GHz
S-1514/10-86
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police radar detector
Abstract: DOPPLER 10.525 ghz radar detector detector FM TRANSMITTER CIRCUIT Gunn Diode at power supply circuit police radar detector receiver police radar detector detector gunn diode x band amplifier police radar detector local oscillator frequency varactor diode for x band radar radar detector receiver
Text: Glossary — Terms as used in this catalog ATTENUATOR — A PIN diode attenuator is a two terminal device capable of providing a prescribed RF attenuation based on the level of bias control applied. BARRIER HEIGHT — The barrier height of a Schottky junction determines the voltage current characteristics of that diode.
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A01803
police radar detector
DOPPLER 10.525 ghz
radar detector detector FM TRANSMITTER CIRCUIT
Gunn Diode at power supply circuit
police radar detector receiver
police radar detector detector
gunn diode x band amplifier
police radar detector local oscillator frequency
varactor diode for x band radar
radar detector receiver
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Avantek mixer
Abstract: police radar detector normal radar circuit police radar detector detector MSF-8885 s band doppler mixer catv up converter diagram radar circuit police radar detector receiver radar block diagram
Text: prelim inary d a ta sheet 0AVANTEK MSF-8885 Silicon Bipolar MMIC Frequency Converter July, 1986 o<?AOi 005141 c 3 V ^ r\ Avantek 85 Plastic Package Features RF O U TP U T AND BIAS • Up or Down Frequency Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz
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MSF-8885
ADS-1515/10-86
Avantek mixer
police radar detector
normal radar circuit
police radar detector detector
MSF-8885
s band doppler mixer
catv up converter
diagram radar circuit
police radar detector receiver
radar block diagram
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PDF
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Untitled
Abstract: No abstract text available
Text: preliminary data sheet QlAVANTEK n'î .'N M SF-8885 Silicon Bipolar M M IC Frequency Converter July, 1986 o ,?ACji 005141 Avantek 85 Plastic Package Features RF O U TP U T AND BIAS Up or Down Frequency Conversion with up to 20 dB Conversion Gain RF Input From 0.5 to 10 GHz
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SF-8885
ADS-1515/10-86
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Schottky diode Die flip chip
Abstract: police radar detector MADS-001317-1320AG
Text: GaAs Solder Bump Flip Chip Schottky Diode MADS-001317-1320AG V1 Features • Low Series Resistance, 4 Ω • Low Capacitance, 45 fF • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Solderable Bump Die Attach Mounting Side with Solder Bumps
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MADS-001317-1320AG
MADS-001317-1320AG
Schottky diode Die flip chip
police radar detector
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MA4E2038
Abstract: handling of beam lead diodes police radar detector M541
Text: Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features • • • • • Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation
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MA4E2038
MA4E2038
handling of beam lead diodes
police radar detector
M541
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Untitled
Abstract: No abstract text available
Text: MA4E2037, MA4E2039, MA4E2040 M/A-COM GaAs Beam Lead Schottky Barrier Diodes RF & Micrawas/e Products Features Package Outlines • • • • • MA4E2037 Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation M ultiple Configurations
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MA4E2037,
MA4E2039,
MA4E2040
MA4E2037
MA4E2037
A4E2039
MA4E2040
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Untitled
Abstract: No abstract text available
Text: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach
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MADS-001317-1320AG
MADS-001317-1320AG
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MO9072
Abstract: No abstract text available
Text: GUNN TRANSCEIVERS Voltage Controlled TM MO87127 – MO9140 Features ● Electronic Frequency Control ● High Doppler Sensitivity Levels ● Low AM and FM Noise Levels ● Direction-of-Motion Sensing ● Compact Size ● Pulsed Transceivers Available Applications
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MO87127
MO9140
MO9071,
MO9072
MO9410-1,
UG599/U
WR-28
MO9072
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police radar detector
Abstract: Schottky diode Die flip chip Schottky diode Die MADS-001317-1320AG police radar
Text: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach
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MADS-001317-1320AG
MADS-001317-1320AG
police radar detector
Schottky diode Die flip chip
Schottky diode Die
police radar
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dielectric resonator
Abstract: dielectric resonator filters for the application design dielectric resonator oscillator cavity resonator waveguide duplexer 10GHz OSCILLATOR dielectric resonator oscillator wireless cable tv ceramic coaxial resonators police radar detector
Text: TOKEN TE01δ Dielectric Resonators & Materials Dielectric Resonator Materials Microwave Dielectric Resonator Material Is The Cornerstone of Future Communications Technology TE01δ Mode Preview Microwave dielectric ceramics as the key basic materials to modern communication technology, after Token
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Schottky diode Die flip chip
Abstract: police radar detector police radar detector detector MA4E1319-1 MA4E1319-2 0618 2375 MA4E1317 MA4E1318 "Schottky Barrier Diodes"
Text: MA4E1317, MA4E1318 MA4E1317 MA4E1319-2 MA4E1319-1, MA4E2160 V2 GaAs Flip Chip Schottky Barrier Diodes Features • Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Designed for Easy Circuit Insertion
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MA4E1317,
MA4E1318
MA4E1317
MA4E1319-1,
MA4E1319-2
MA4E2160
MA4E1317
MA4E1318
MA4E1319-1
Schottky diode Die flip chip
police radar detector
police radar detector detector
MA4E1319-2
0618
2375
"Schottky Barrier Diodes"
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MA4E1317
Abstract: No abstract text available
Text: an A M P com pany GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 MA4E131712 Case Style 1198 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection
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MA4E1317,
MA4E1318
MA4E1319-1,
MA4E1319-2
MA4E131712
MA4E1317
MA4E1319-1
MA4E1319-2
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Schottky diode Die flip chip
Abstract: 0045E
Text: M an A M P com pany GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features • MA4E131712 Case Style 1198 Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection
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MA4E1317,
MA4E1318
MA4E1319-1,
MA4E1319-2
MA4E131712
MA4E1317
MA4E1319-1
MA4E1319-2
Schottky diode Die flip chip
0045E
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police radar detector
Abstract: MA4E1317 police radar detector detector MA4E1318 MA4E1319-1 MA4E1319-2 Schottky diode Die flip chip
Text: GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features ● ● ● ● ● ● MA4E13171, 2 Case Style 1198 Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection
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MA4E1317,
MA4E1318
MA4E1319-1,
MA4E1319-2
MA4E13171,
MA4E1317
MA4E1318
MA4E1319-1
MA4E1319-2
police radar detector
police radar detector detector
Schottky diode Die flip chip
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MA4E2037
Abstract: MA4E2039 M541 MA4E2040
Text: MA4E2037, MA4E2039,MA4E2040 GaAs Beam Lead Schottky Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V2 MA4E2037 Description and Applications M/A-Com’s MA4E2037 single, MA4E2039 anti-parallel
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MA4E2037,
MA4E2039
MA4E2040
MA4E2037
MA4E2037
MA4E2040
M541
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Untitled
Abstract: No abstract text available
Text: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V2 Features • • • • • • • • • • Usable Past 80GHz Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant
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MADS-001317-1500
80GHz
MADS-001317â
MADS-001317-1500
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Untitled
Abstract: No abstract text available
Text: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V3 Features • • • • • • • • • • Usable Past 80GHz Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant
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MADS-001317-1500
80GHz
MADS-001317â
MADS-001317-1500
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MADS-001317-1500
Abstract: Schottky diode Die flip chip MADS-001317-1500AG SN63 PB37 PROFILES MADS-001317-1500AP MADS-001317
Text: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V1 Features • • • • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant Designed for Easy Circuit Insertion
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MADS-001317-1500
MADS-001317-1500
Schottky diode Die flip chip
MADS-001317-1500AG
SN63 PB37 PROFILES
MADS-001317-1500AP
MADS-001317
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MA4E2037
Abstract: MA4E2038 MA4E2039 M541 MA4E2040 millimeter wave radar
Text: MA4E2037, MA4E2038, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V3 MA4E2037, MA4E2038 Description and Applications
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MA4E2037,
MA4E2038,
MA4E2039,
MA4E2040
MA4E2038
MA4E2037
MA4E2038
MA4E2039
MA4E2040
M541
millimeter wave radar
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MA4E1317
Abstract: ma4e1319-2 MA4E1319-1
Text: GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1
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MA4E1317,
MA4E1318,
MA4E1319-1,
MA4E1319-2
MA4E1317
MA4E1317
MA4E1318
MA4E1319-1
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