AT35700
Abstract: atmel 1505
Text: Standard Features • • • • • • • • • 5.0V low-leakage CMOS transistors 17V and 40V high-voltage LDMOS transistors High-density, double-poly memory cell Isolated NMOS and LDMOS transistors Analog Resistors Dual Poly Capacitor Mono-silicon capacitors
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AT35700,
AT35700
atmel 1505
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lcd n 20201
Abstract: CLW10 38495 S337 89v51 s179 bd 5445 code s244
Text: HD66779 366-channel Source Driver for 262,144-color Displays 64 grayscale for Amorphous Silicon, Low-temperature Poly-silicon TFT Panels REJxxxxxxx-xxxxZ Rev.1.00 June.13.2003 Description . 4
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HD66779
366-channel
144-color
lcd n 20201
CLW10
38495
S337
89v51
s179
bd 5445
code s244
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S1854
Abstract: transistor s1854 s1854 a s1854 equivalent ic s1854 SI854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036
Text: SILICON N-SUBSTRATE MONOLITHIC TYPE S1854 SI854 IS A REGULATOR DRIVER FOR LINE OPERATED TV, Unit in mm WHICH ARE BUILT UP OF ERROR AMPLIFIER TRANSISTOR, 10.3MAX. 0&6±O,2 STANDARD VOLTAGE ZENER DIODE AND POLY-SILICON RESISTORS ON MONOLITHIC CHIP. FEATURES:
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S1854
SI854
S1854
transistor s1854
s1854 a
s1854 equivalent
ic s1854
REGULATOR s1854
transistor s1854 ic error
REGULATOR IC FOR 150V s1854
B1036
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R016H
Abstract: R405h HD667P20 22350 R01Bh AD168 HD667P21 S252 HD66776 KVP28
Text: HD66776 Low Temperature poly-silicon TFT Panel 256-channel Source Driver with Internal RAM for 262,144-color display REJxxxxxxx-xxxxZ Rev.1.11 Oct.02.2003 Index Description . 6
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HD66776
256-channel
144-color
HD66776
HD667P20
R016H
R405h
22350
R01Bh
AD168
HD667P21
S252
KVP28
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BLV947
Abstract: No abstract text available
Text: Philips Semiconductors • _ 711DflSb DDb31bS i n ; _ PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting resistors for an optimum temperature profile
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711DflSb
DDb31bS
BLV947
OT262A2
BLV947
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1 kilo ohm resistor specifications
Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
Text: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •
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AT46700
1 kilo ohm resistor specifications
RESISTOR 10 KILO OHM
100 KILO OHM RESISTOR
atmel 802
polysilicon resistor
atmel 813
1 kilo ohm resistor
10 kilo ohm resistor
3.3 kilo ohm resistor
RESISTOR 1 KILO OHM
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SK TME 86
Abstract: SK TME 86 i on SK TME 86 i 80 SK TME 86 i 25 MPC11
Text: April 1992 Semiconductor COP404C ROMIess CMOS Microcontrollers General Description Features The COP4G4C ROMIess Microcontroller is a member of the COPS family, fabricated using double-poly, silicon gate CMOS microCMOS technology. The COP4C4C contains
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COP404C
COP444C
COP444C,
COP424C,
COP410C.
SK TME 86
SK TME 86 i on
SK TME 86 i 80
SK TME 86 i 25
MPC11
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COP404CN
Abstract: COP404C COP410C COP424C COP444C SE-L200 cm944 M50K 523BF 1010I
Text: COP404C National Semiconductor COP404C ROMIess CMOS Microcontrollers General Description Features The COP404C ROMIess Microcontroller Is a member of the CO PS -family, fabricated using double-poly, silicon gate CMOS microCMOS technology. The COP404C contains
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COP404C
COP444C
COP444C,
COP424C,
C0P410C.
COP410C/411C.
CT11A
COP404CN
COP410C
COP424C
SE-L200
cm944
M50K
523BF
1010I
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Untitled
Abstract: No abstract text available
Text: N AUER P H IL IP S /D IS C R E T E bTE D bbS3T31 002T0B3 OCH M A P X _Product specification Philips Semiconductors_ UHF linear push-pull power transistor FEATURES • Poly-silicon emitter-ballasting resistors for an optimum
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bbS3T31
002T0B3
BLV62
MRA323
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diode S498 equivalent
Abstract: s415 rf switch s403 diode S432 DIODE schottky diode s524 DIODE S417 Schottky diode S475 schottky s407 diode s405 diode s426
Text: HD66772 Rev. 1.1-3a / March, 2003 HD66772 Amorphous Silicon/Low-temperature Poly-silicon TFT Panel 528-channel Source Driver with Internal RAM for 260-thousand-color Displays Rev. 1.1-3a March, 2003 Description The HD66772 528-channel source driver LSI is used in combination with the HD66774 gate
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HD66772
528-channel
260-thousand-color
HD66772
HD66774
176RGB-by-240-dot
HD667P00
diode S498 equivalent
s415 rf switch
s403 diode
S432 DIODE schottky
diode s524
DIODE S417 Schottky
diode S475
schottky s407
diode s405
diode s426
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diode s498
Abstract: DIODE S456 Schottky DIODE S526 Schottky
Text: HD66772 Rev. 1.1-2 / October, 2002 HD66772 Amorphous Silicon/Low-temperature Poly-silicon TFT Panel 528-channel Source Driver with Internal RAM for 260-thousand-color Displays Rev. 1.1-2 October, 2002 Description The HD66772 528-channel source driver LSI is used in combination with the HD66774 gate
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HD66772
528-channel
260-thousand-color
HD66772
HD66774
176RGB-by-240-dot
HD667P00
diode s498
DIODE S456 Schottky
DIODE S526 Schottky
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BLV62
Abstract: philips ELECTROLYTIC capacitor fe
Text: PH ILIPS bSE J> INTERNATIONAL B 711DfiEb ODbETfiD 5T4 • PHIN Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Poly-silicon emitter-ballasting
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711DfiEb
BLV62
OT262A2
OT262A2
RA322
MF1A323
BLV62
philips ELECTROLYTIC capacitor fe
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Untitled
Abstract: No abstract text available
Text: jiPD4369 8,192 X 9-Bit Static CMOS RAM W JL J W NEC Electronics Inc. Description Pin Configuration The /JPD4369 is a high-speed 8,192-word by 9-bit static RAM fabricated with CMOS peripheral circuits and N-channel memory cells with poly silicon resistors. Two
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uPD4369
/JPD4369
192-word
jPD4369
28-pin
D4369
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb53^31 D0S12bS TSS Bi APX Preliminary specification UHF push-pull power transistor BLV947 — AMER PHILIPS/DISCRETE FEATURES • Poly-silicon emitter-ballasting resistors for an optimum temperature profile QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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D0S12bS
BLV947
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COP311C
Abstract: COP400 COP410C COP411C H-16
Text: COP410C/CO P411C /C O P310C/CO P311C Single-Chip CMOS Microcontrollers General Description Features The COP410C, COP411C, COP3-IOC, and COP311C fully static, single-chip CMOS microcontrollers are members of the COPS tm family, fabricated using double-poly, silicon
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COP410C/COP411C/COP310C/COP311C
COP410C,
COP411C,
COP311C
COP411
COP400
COP410C
COP411C
H-16
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L0615
Abstract: CQP210C CQP400 D20A B444 COP211C binary bcd conversion 84443 84448
Text: COP210C/COP211C yw\National Juâ Semiconductor COP210C/COP211C Single-Chip CMOS Microcontrollers General Description Features The COP210C and COP211C fully static, single-chip CMOS microcontrollers are members of the COPStm family, fabri cated using double-poly, silicon-gate CMOS technology.
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COP210C/COP211C
COP210C
COP211C
CQP210C
te-11
L0615
CQP400
D20A
B444
binary bcd conversion
84443
84448
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kf 202 transistor
Abstract: Chirp spice gummel SR770 spectra physics
Text: Measurement of ‘1/f’ Noise in Narrow Poly-silicon Emitter Bipolar Transistor Structures. S.D. Connor Bipolar Characterization Group, Central R&D, GEC Plessey Semiconductors, Tweedale Way, Oldham, Lancs OL9 7LA, England. Abstract:- We present here our initial findings on low frequency
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Untitled
Abstract: No abstract text available
Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear push-pull power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Poly-silicon emitter-ballasting
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BLV62
MRA318
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BLV947
Abstract: uhf npn 200w cw transistor 200w
Text: Philips Semiconductors bb53^31 OOEISbS TS5 APX Preliminary specification BLV947 UHF push-pull power transistor •N AMER PHILIPS/DISCRETE bTE D QUICK REFERENCE DATA FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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BLV947
OT262A2
BLV947
uhf npn 200w cw
transistor 200w
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Untitled
Abstract: No abstract text available
Text: , L/nc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF push-pull power transistor FEATURES • Double Input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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BLV948
2x100
BLV948
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NFET DIE CHIP
Abstract: poly silicon resistor OP02
Text: . I . - HOLT INTEGRATED CIRCUITS 1£E J T 454114.3 OOQOEbl 4 •P¥2-3/ HI - 5 3 0 0 CMOS ANALOG/DIGITAL ARRAY General Description The HI-5300 CMOS Analog/Digital Array uses stan dard CMOS silicon gate double poly fabrication tech
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HI-5300
NFET DIE CHIP
poly silicon resistor
OP02
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TRANSISTOR C 1177
Abstract: No abstract text available
Text: MTC-3200 HBIMOS Standard Cell Library Services BICMOS Family Features • Technology: DMOS, BIPOLAR and CMOS 3|i channel length, silicon g ate, single poly, double m etal, w ith compacted interconnect design rules • Typical G ate Delay: 2 .5 ns VM* 15V
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MTC-3200
TRANSISTOR C 1177
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acumos
Abstract: list of n channel fet A300 MF10 nmos pmos array n channel fet array
Text: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double poly p-well process. The minimum gate channel
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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BLV948
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PDF
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