HIP1030
Abstract: HIP1030AS
Text: HIP1030 S E M I C O N D U C T O R 1A High Side Driver with Overload Protection December 1994 Features Description o o • Over Operating Temperature Range -40 C to +125 C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range
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HIP1030
HIP1030
1-800-4-HARRIS
HIP1030AS
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT789A 25V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -25V IC = -3A high Continuous Current Low saturation voltage VCE sat < -250mV @ -1A
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FZT789A
OT223
-250mV
FZT689B
AEC-Q101
OT223
J-STD-020
DS33168
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VN0109N5
Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109
Text: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an
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AN-D15
VN0104/VN0106/VN0109
VN0104
VN0106
VN0109
VN0109N5
VN0106N6
VN0109N2
AN-D15
VN0104
VN0104N3
VN0104N6
VN0106
VN0106N3
VN0109
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Untitled
Abstract: No abstract text available
Text: WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -60 VOLTAGE 1 GATE Features: 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE * Super high dense cell design for low RDS(ON)
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WTN9575
OT-223
18-Jul-07
OT-223
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SOP8 Package
Abstract: No abstract text available
Text: WTK6679 Surface Mount P-Channel Enhancement Mode MOSFET 7 -14 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<10mΩ@VGS = -10V * RDS(ON)<13mΩ@VGS = -4.5V
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WTK6679
WTK6679
300us,
03-May-07
SOP8 Package
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Untitled
Abstract: No abstract text available
Text: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3974-01L
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Untitled
Abstract: No abstract text available
Text: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3974-01L
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AP2318GEN
Abstract: No abstract text available
Text: AP2318GEN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Small outline package ▼ RoHS Compliant BVDSS 30V RDS ON 720mΩ ID 1A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to
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AP2318GEN
OT-23
OT-23
100ms
AP2318GEN
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2N7336
Abstract: IRFG6110
Text: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)
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2N7336
IRFG6110
10--Gate
12--GatForward
2N7336
IRFG6110
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27BSC
Abstract: marking 62m
Text: WTK9410 6 5 D 4 D G 7 3 D S 8 S 2 D S P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)
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WTK9410
300us,
12-Mar-07
27BSC
27BSC
marking 62m
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Untitled
Abstract: No abstract text available
Text: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)
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2N7336
IRFG6110
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27BSC
Abstract: marking 62m
Text: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)
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WTK9410
300us,
12-Mar-07
27BSC
27BSC
marking 62m
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MOSFET 600V 1A
Abstract: BALLAST CFL
Text: MPK02N6 N-Channel POWER MOSFET Features 600V, 1A, Typical Rds on = 7Ω Extremely High dv/dt Capability 100% Avalanche Tested New High Voltage Benchmark Gate Charge Minimized Application Low Power Battery Chargers Swith Mode Low Power Supplies Low Power, Ballast, CFL(Compact
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MPK02N6
00A/us
MOSFET 600V 1A
BALLAST CFL
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AN1332
Abstract: smd transistor marking C14 C5 MARKING smd transistor smd transistor marking 1p T DIODE smd marking R12 smd transistor pinout sot23 MARKING SMD transistor R11 smd transistor marking 1p smd transistor marking sp1 capacitor SM 1206 100uf 6.3V
Text: ISL8510EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8510 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8510 integrates
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ISL8510EVAL1Z
ISL8510
500mA
AN1332
ISL8510EVAL1Z
smd transistor marking C14
C5 MARKING smd transistor
smd transistor marking 1p T
DIODE smd marking R12
smd transistor pinout sot23
MARKING SMD transistor R11
smd transistor marking 1p
smd transistor marking sp1
capacitor SM 1206 100uf 6.3V
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smd transistor marking r14
Abstract: 0603 footprint IPC IHLP-2525CZ-ER-10R-M01 DIODE smd marking R12 smd diode marking 1P smd transistor marking 1p smd transistor marking D3 C3225X7R1E106MT CAPACITOR SMD smd transistor marking u1
Text: ISL8501EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8501 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8501 integrates
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ISL8501EVAL1Z
ISL8501
500mA
AN1326
smd transistor marking r14
0603 footprint IPC
IHLP-2525CZ-ER-10R-M01
DIODE smd marking R12
smd diode marking 1P
smd transistor marking 1p
smd transistor marking D3
C3225X7R1E106MT
CAPACITOR SMD
smd transistor marking u1
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HIP1030AS
Abstract: igbt driver
Text: 39 HIP1030 PRELIMINARY Apni 1994 1A High Side Driver with Overload Protection Description Features • Over Operating Temperature Range -40°C to +125°C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range • Over-Voltage Shutdown Protected
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HIP1030
HIP1030
HIP1030AS
igbt driver
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Untitled
Abstract: No abstract text available
Text: S HIP 1030 ADVANCE INFORMATION 1A High Side Driver With Over-Load Protection May !992 Features Description • Over Operating Range: -40°C to +125°C - 1V Max at 1A Saturation Voltage - 1A Current Switching Capability - 4.5V to 25V Power Supply Range The HIP1030 is a Power Integrated Circuit designed as a
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HIP1030
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P-channel Dual MOSFET VGS -25V
Abstract: b 1624 transistor P-channel MOSFET VGS -25V
Text: 0 OPTEK Product Bulletin HCT802 May 1993 Dual Enhancement Mode MOSFET Type HCT802 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V
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HCT802
HCT802
P-channel Dual MOSFET VGS -25V
b 1624 transistor
P-channel MOSFET VGS -25V
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Untitled
Abstract: No abstract text available
Text: @.OBIEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package • V ds = 90V • lD o n N-Channel = 1.9A P-Channel = 0.5A • Two devices selected for V ds, switching time, and capacitance
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OCR Scan
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HCT801
HCT801
250mA
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HCT801
Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185
Text: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V
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HCT801
HCT801
000E345
HCT801TX
HCT802
VN0109
VP0109
TRANSISTOR BI 185
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SSD2002
Abstract: DD214 942 rectifier diode
Text: N & P-CHANNEL POWER MOSFET SSD2002 FEATURES 8SOIC • Extremely Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability
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SSD2002
SSD2002
b414E
DD214
942 rectifier diode
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FS2KM18A
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE FS2KM-18A + • VDSS . 900V • TDS ON (MAX) .7 .3 Q
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FS2KM-18A
FS2KM18A
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C320-16
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC C onverter, b attery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per sonal com puter etc. MAXIMUM RATINGS Symbol Tc = 25°C Ratings Unit V dss Drain-source voltage
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FS2AS-14A
C320-16
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HCT801TX
Abstract: Dual Enhancement Mode MOSFET
Text: 0 OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source
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OCR Scan
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HCT801
HCT801
VN0109
D00S34S
HCT801TX
Dual Enhancement Mode MOSFET
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