NFC 63-110
Abstract: MREBC20AC2 RL4RD022T VDE 0660 BS 4794 MCRA022AT RL4RA022T TIMER ON DELAY 220V AC PRC4M30CDL BSLR2R MCRC031AT
Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical
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H-1340
B-9000
C/4601/E/EX
NFC 63-110
MREBC20AC2
RL4RD022T
VDE 0660 BS 4794
MCRA022AT
RL4RA022T
TIMER ON DELAY 220V AC
PRC4M30CDL
BSLR2R
MCRC031AT
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MC1A301AT
Abstract: CL25D300T CL04A400M CK08CA311 CL09A300M CL00A301T CK75CA311 cl02d310t CL02A400T CL05A400M
Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical
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H-1340
B-9000
C/4601/E/EX
MC1A301AT
CL25D300T
CL04A400M
CK08CA311
CL09A300M
CL00A301T
CK75CA311
cl02d310t
CL02A400T
CL05A400M
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viper 22e
Abstract: ac DC supplies MEAN WELL schematic power 22E NV SMD TRANSISTOR IEC62053-21 PC817 SMD 75W SMD C4 2.2uF450V SO5K275 RV3, SMD
Text: STEVAL-ISA012V1 3 phase power supply with VIPer and Power MOSFETs Data Brief Features • Minimum AC input voltage = 90 VAC ■ Maximum AC input voltage = 450 VAC ■ Time of hold up capability > 50 ms ■ Mean input power < 6 W in compliance with IEC62053-21
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STEVAL-ISA012V1
IEC62053-21)
viper 22e
ac DC supplies MEAN WELL schematic
power 22E
NV SMD TRANSISTOR
IEC62053-21
PC817 SMD
75W SMD
C4 2.2uF450V
SO5K275
RV3, SMD
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24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Text: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC
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diac d83
Abstract: TELEVISION EHT TRANSFORMERS Power Semiconductor Applications Philips Semiconductors "Power Semiconductor Applications" Philips IC HEF 4538 TDA3654 equivalent at2090/01 D63 diac varistor 10E 431 automatic voltage stabilizer circuit diagram lm324
Text: Televisions and Monitors Power Semiconductor Applications Philips Semiconductors CHAPTER 4 Televisions and Monitors 4.1 Power Devices in TV Applications including selection guides 4.2 Deflection Circuit Examples 4.3 SMPS Circuit Examples 4.4 Monitor Deflection and SMPS Example
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75639P
Abstract: HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334
Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet April 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.5 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.
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HUF75639G3,
HUF75639P3,
HUF75639S3S
O-263AB
330mm
100mm
EIA-481
75639P
HUF75639P3
75639G
75639S
HUF75639G3
HUF75639S3S
HUF75639S3ST
TB334
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75639p
Abstract: 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
Text: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUFA75639G3,
HUFA75639P3,
HUFA75639S3S
75639p
75639s
75639G
75639
HUFA75639G3
HUFA75639P3
HUFA75639S3S
HUFA75639S3ST
TB334
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AN9321
Abstract: AN9322 HUFA75639S3R4851 TB334 TC217
Text: HUFA75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
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HUFA75639S3R4851
115opment.
AN9321
AN9322
HUFA75639S3R4851
TB334
TC217
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Untitled
Abstract: No abstract text available
Text: RoHS 6 Compliant Type RJS Telecom - Power Cross Protection & Ballast Protection RJS May2012D Pb RJS Series, Telecom - Power Cross Protection & Ballast Protection Fuse Description RJS Fuses are primarily intended for use in telecommunication circuit applications requiring low current
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May2012D
1234235678299A17
DEF89
953875B68299A17
7C32478299A17
7C3247
12345674589AB4CB9DDB
BD84666
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AN7254
Abstract: AN9321 AN9322 HUF75639S3R4851 TB334
Text: HUF75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
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HUF75639S3R4851
115Vopment.
AN7254
AN9321
AN9322
HUF75639S3R4851
TB334
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Untitled
Abstract: No abstract text available
Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,
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HUF76105DK8
6105D
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AN7254
Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Text: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76105SK8
AN7254
AN9321
AN9322
HUF76105SK8
HUF76105SK8T
MS-012AA
TB334
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Untitled
Abstract: No abstract text available
Text: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76105DK8
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75639p
Abstract: 75639g
Text: HUFA75639G3, HUFA75639P3, HUFA75639S3S TM Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUFA75639G3,
HUFA75639P3,
HUFA75639S3S
75639p
75639g
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75639s
Abstract: 75639P 75639 75639G HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST TB334
Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75639G3,
HUF75639P3,
HUF75639S3S,
HUF75639S3
75639s
75639P
75639
75639G
HUF75639G3
HUF75639P3
HUF75639S3
HUF75639S3S
HUF75639S3ST
TB334
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AN7254
Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Text: HUF76105SK8 Data Sheet January 2003 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76105SK8
AN7254
AN9321
AN9322
HUF76105SK8
HUF76105SK8T
MS-012AA
TB334
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AN7254
Abstract: AN7260 AN9321 AN9322 HAF70009 TB334
Text: HAF70009 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HAF70009
AN7254
AN7260
AN9321
AN9322
HAF70009
TB334
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75639p
Abstract: 75639g 75639 HUF75639S3S equivalent 75639S HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST
Text: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75639G3,
HUF75639P3,
HUF75639S3S,
HUF75639S3
75639p
75639g
75639
HUF75639S3S equivalent
75639S
HUF75639G3
HUF75639P3
HUF75639S3
HUF75639S3S
HUF75639S3ST
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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MPS 0729
Abstract: asea relay RIS MPS 0633 rpb10 mps 0727 MPS 0704 mps 0724 MPS 0713 asea rp1 mps 0734
Text: Catalogue ¡ a g s i f f ï K51*1 E L • n*i o l POWER RELAYS types RPB, RP 1 and RPF For directional earth-fault protections directional short-circuit protections directional power protections reverse power protections ovef-power and under-power protections
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tic 1260 scr texas
Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.
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7915 CT
Abstract: LM741 equivalent IC 7915 metal package 7915 LF441CH ESE 1012 LF441 7915 lf441a LF441ACN
Text: LF441A/LF441 NA TL S E M I C O N D LINEAR 22E D • bSQ1124 □ 0 L 7 cl?ti 1 ■ National Semiconductor LF441A/LF441 Low Power JFET Input Operational Amplifier T-79-15 General Description The LF441A/441 low power operational amplifier provides many of the same AC characteristics as the industry stan
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LF441A/LF441
T-79-15
LF441A/441
LM741
LM741.
LF441
TL/H/9297-13
7915 CT
LM741 equivalent
IC 7915
metal package 7915
LF441CH
ESE 1012
7915
lf441a
LF441ACN
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b 595 transistor
Abstract: No abstract text available
Text: Preliminary Specifications M an AMP com pany Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MA4T56800 V2.00 Features • High Output Power, 23 dBm PldB @ 1 GHz • High Gain-Bandwidth Product, 4 GHz fT • High Power Gain, I S21E 12 = 12 dB @ 1 GHz
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MA4T56800
MA4T568
MA4T56800,
MA4T56800
MA4T568000
b 595 transistor
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transistor b 595
Abstract: No abstract text available
Text: AlfcCOH Preliminary Specifications M an A M P com pany Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MA4T56800 V 2 .0 0 Features • High O utput Power, 23 dBm PldB @ 1 GHz • High Gain-Bandwidth Product, 4 GHz fT • High Power Gain, I S21E T = 12 dB @ 1 GHz
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MA4T56800
MA4T568
MA4T56800,
operati8761
MA4T56800
MA4T568000
transistor b 595
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