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    POWER 470-860MHZ W Search Results

    POWER 470-860MHZ W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER 470-860MHZ W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    shery

    Abstract: No abstract text available
    Text: UTV0408-45 45W Psync, 470-860MHz, 32V Broadband RF Power N Channel Enhancement-Mode Lateral MOSFET The UTV0408-45 is designed for high power UHF TV transmitter applications and is capable of producing 14dB gain and 45 watt peak sync output power over an instantaneous bandwidth


    Original     		PDF UTV0408-45 470-860MHz, UTV0408-45 860MHz. 30dBc 55dBc UTV0408-45F shery

    SUTV040

    Abstract: M122 SD4011
    Text: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE POUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE


    Original     		PDF SD4011 SUTV040 SD4011 SUTV040 M122

    SUTV040

    Abstract: airtronic M122 SD4011
    Text: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE P OUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE


    Original     		PDF SD4011 SUTV040 SD4011 SUTV040 airtronic M122

    Untitled

    Abstract: No abstract text available
    Text: SD4011 RF POWER BIPOLAR TRANSISTORS UHF TV/LINEAR APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ INTERNAL INPUT MATCHING ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ CLASS A OPERATION ■ METAL/CERAMIC PACKAGE ■ POUT = 4 W MIN. WITH 8 dB GAIN


    Original     		PDF SD4011 SD4011

    M122

    Abstract: SD4011
    Text: SD4011 RF POWER BIPOLAR TRANSISTORS UHF TV/LINEAR APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ INTERNAL INPUT MATCHING ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ CLASS A OPERATION ■ METAL/CERAMIC PACKAGE ■ POUT = 4 W MIN. WITH 8 dB GAIN


    Original     		PDF SD4011 SD4011 M122

    860mhz rf amplifier circuit diagram

    Abstract: UMTS gsm RFMD PA LTE
    Text: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features „ -60dBc ACPR at 13dBm WCDMA „ 0.25W Output Power P1dB „ Excellent Linearity to DC Power Ratio „ High Gain: 17.5dB at 2.65GHz


    Original     		PDF RFPA2089 50MHz 2700MHz RFPA2089 OT-89 -60dBc 13dBm 65GHz 860mhz rf amplifier circuit diagram UMTS gsm RFMD PA LTE

    air variable capacitor

    Abstract: carbon variable resistor variable capacitor 100 ohm Variable Resistor 1/4W capacitor ceramic variable RF capacitor variable Z1 SURFACE MOUNT 200B 700B SD56120
    Text: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 100 W WITH 14 dB GAIN @ 860 MHz M246 epoxy sealed • BeO FREE PACKAGE


    Original     		PDF SD56120 SD56120 TSD56120 air variable capacitor carbon variable resistor variable capacitor 100 ohm Variable Resistor 1/4W capacitor ceramic variable RF capacitor variable Z1 SURFACE MOUNT 200B 700B

    CXE2022SR

    Abstract: CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z CXE-2022Z amplifier DFN 2x2 MARKING RFMD CXE2022
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE2022SR CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z amplifier DFN 2x2 MARKING RFMD CXE2022

    CXE-2022

    Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE-2022 MARKING RFMD InP transistor HEMT optimum recievers 106-172 106172

    LLHB5402-0665-G

    Abstract: hybrid coupler 3dB 90 hybrid coupler 3dB HYBRID SEMICONDUCTORS LLHB02
    Text: SMT Hybrid Coupler 3dB 90°. The content of this specification may change without notification 09/18/08 LLHB5402-0665-G 665MHz:470~860MHz Configuration, Dimensions Schematics Out1 Out2 5.0 LLHB02 2.0 LLHB02 50 Ω Dummy Unit : mm Input Out2 Port (0 deg.)


    Original     		PDF LLHB5402-0665-G 665MHz 860MHz) LLHB02 LLHB5402-0665-G hybrid coupler 3dB 90 hybrid coupler 3dB HYBRID SEMICONDUCTORS LLHB02

    balun 50 ohm

    Abstract: 200B 700B JESD97 SD56120 TSD56120
    Text: SD56120 RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100W with 14dB gain @ 860MHz ■ BeO free package Description


    Original     		PDF SD56120 860MHz SD56120 balun 50 ohm 200B 700B JESD97 TSD56120

    THU35

    Abstract: THU50 power 470-860mhz w THU100LI RF GAIN LTD Class A AMPLIFIER 4W 470-860MHz
    Text: THU100LI 100 W Class A UHF Amplifier PDC-US/02 360mm 14.17" CPPO1 8X IN PDC-US/01 ∑ + IN 114/34 OUT 3 x THU50 114/34 PDC-U3/02 + > 100 W THU35 OUT IN 35W 114/34 4W + 35W ≤ 1.5 W ∑ OUT 4W IN 35W 114/34 4W + 470 - 860 MHz CPPO1 8X 470 - 860 MHz 26 Volts


    Original     		PDF THU100LI PDC-US/02 360mm PDC-US/01 THU50 PDC-U3/02 THU35 250mm 108mm THU35 THU50 power 470-860mhz w THU100LI RF GAIN LTD Class A AMPLIFIER 4W 470-860MHz

    THU50

    Abstract: 470-860mhz Power amplifier w power 470-860mhz w 45W UHF linear amplifier 470-860 470-860mhz Power amplifier
    Text: THU50 50W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors whith gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.


    Original     		PDF THU50 40W267 THU50 470-860mhz Power amplifier w power 470-860mhz w 45W UHF linear amplifier 470-860 470-860mhz Power amplifier

    THU100

    Abstract: AMPLIFIER 2 MHZ 100W BW TV
    Text: THU100 100W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors with gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.


    Original     		PDF THU100 40W267 THU100 AMPLIFIER 2 MHZ 100W BW TV

    THU100C

    Abstract: 40W267 470-860mhz Power amplifier w 470-860mhz Power amplifier AMPLIFIER 2 MHZ 100W transposers
    Text: THU100C 100W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors with gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.


    Original     		PDF THU100C 40W267 THU100C 470-860mhz Power amplifier w 470-860mhz Power amplifier AMPLIFIER 2 MHZ 100W transposers

    GaAs MESFET

    Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
    Text: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain


    Original     		PDF NES2527B-30 NES1821B-50 NE6500278 33dBm NE650 NEL2000 NEZ5964 NE850 GaAs MESFET MESFET NEZ1011 NEZ1414

    MS1512

    Abstract: No abstract text available
    Text: MS1512 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 20 VOLTS CLASS A LINEAR OPERATION POUT = 1.0 WATT GP = 10.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1512 is a silicon NPN bipolar transistor designed for


    Original     		PDF MS1512 MS1512 100mW 860MHz -16dBc)

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1512 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 20 VOLTS CLASS A LINEAR OPERATION POUT = 1.0 WATT GP = 10.0 dB MINIMUM


    Original     		PDF MS1512 MS1512 100mW 860MHz -16dBc)

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1512 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Features • • • • • • 860 MHz 20 VOLTS CLASS A LINEAR OPERATION POUT = 1.0 WATT GP = 10.0 dB MINIMUM


    Original     		PDF MS1512 MS1512 860MHz -16dBc)

    Untitled

    Abstract: No abstract text available
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z

    MARKING RFMD

    Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z MARKING RFMD CXE2022Z CXE2022SR inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7

    Untitled

    Abstract: No abstract text available
    Text: SMT Hybrid Coupler 3dB 90°. LLHB5402-0665-G 665MHz:470~860MHz Configuration, Dimensions Schematics Out1 Out2 LLHB02 2.0 4.0 5.0 LLHB02 50 Ω Dummy Unit : mm Input Out2 Port (0 deg.) GND Out1 Port (−90 deg.) Termination GND Input Port Specification Style No.


    Original     		PDF LLHB5402-0665-G 665MHz 860MHz) LLHB02

    TDA2579

    Abstract: ic tda2595 TDA8432 TDA2595 860mhz rf amplifier circuit diagram monitor horizontal ic voltage video mixer circuit diagram video amplifier circuits for cctv 50MHz-300MHz cctv circuit diagram
    Text: Signelics TDA8432 Computer-Controlled Deflection Processor for Video Displays Objective Specification Linear Products DESCRIPTION FEATURES The TDA8432 is an l2C bus-controlled deflection processor analog picture ge­ ometry processor which contains the control and drive functions of the deflec­


    OCR Scan     		PDF TDA8432 TDA8432 TC20360S 50MHz 225MHz 300MHz TDA2579 ic tda2595 TDA2595 860mhz rf amplifier circuit diagram monitor horizontal ic voltage video mixer circuit diagram video amplifier circuits for cctv 50MHz-300MHz cctv circuit diagram

    C-100-A1

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS • . ■ . ■ . ■ GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE P out = 4 W MIN. WITH 8 dB GAIN PIN CONNECTION


    OCR Scan     		PDF SD4011 SD4011 C-100-A1