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    POWER AMPLIFIER FOR MOBILE PHONES FOR SOT223 Search Results

    POWER AMPLIFIER FOR MOBILE PHONES FOR SOT223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    MP-5FRJ11SLPS-007 Amphenol Cables on Demand Amphenol MP-5FRJ11SLPS-007 Flat Silver Satin Modular Phone Cable Cable - RJ11 Plug to 4-Conductor Spade Lugs 7ft Datasheet
    MP-5FRJ11SLPS-014 Amphenol Cables on Demand Amphenol MP-5FRJ11SLPS-014 Flat Silver Satin Modular Phone Cable Cable - RJ11 Plug to 4-Conductor Spade Lugs 14ft Datasheet
    MP-5FRJ11SLPS-001 Amphenol Cables on Demand Amphenol MP-5FRJ11SLPS-001 Flat Silver Satin Modular Phone Cable Cable - RJ11 Plug to 4-Conductor Spade Lugs 1ft Datasheet
    MP-5FRJ11SLPS-002 Amphenol Cables on Demand Amphenol MP-5FRJ11SLPS-002 Flat Silver Satin Modular Phone Cable Cable - RJ11 Plug to 4-Conductor Spade Lugs 2ft Datasheet

    POWER AMPLIFIER FOR MOBILE PHONES FOR SOT223 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		PDF

    PO 9038

    Abstract: gaas fet marking a MAX 8985 pin diagram of 7414 019 triquint d 5287 power FET transistor 2 gigahertz Gp 28 db transistor 5478 01380
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		OT223: PO 9038 gaas fet marking a MAX 8985 pin diagram of 7414 019 triquint d 5287 power FET transistor 2 gigahertz Gp 28 db transistor 5478 01380 PDF

    Untitled

    Abstract: No abstract text available
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		PDF

    CLY5

    Abstract: 93 69 MARKING CODE
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		PDF

    04435

    Abstract: CLY 70
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		PDF

    CLY5

    Abstract: MAX 8985 09069 ipc 9702 07293 13.3921
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		OT223 CLY5 MAX 8985 09069 ipc 9702 07293 13.3921 PDF

    MARKING 717

    Abstract: sot-223 MARKING CODE 718 Power amplifier for mobile phones For sot223
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		CLY10 PDF

    09917

    Abstract: No abstract text available
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		OT223 PDF

    Untitled

    Abstract: No abstract text available
    Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		CLY10 PDF

    cly10

    Abstract: CLY 10
    Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable


    Original     		CLY10 CLY 10 PDF

    cly 10

    Abstract: Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		Q62702-L94 OT-223 P-SOT223-4-2 GPS05560 cly 10 Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501 PDF

    transistor smd code marking 561

    Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		OT-223 Q62702-L99 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 sot-223 MARKING CODE 718 smd marking 271 Sot PDF

    WL431003667

    Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		OT-223 Q62702-L94 P-SOT223-4-2 GPS05560 WL431003667 TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512 PDF

    transistor smd code marking 561

    Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		Q62702-L99 OT-223 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 GPS05560 Q62702-L99 s-parameter s11 s12 s21 PDF

    transistor smd 661 752

    Abstract: GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 transistor smd 661 752 GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P PDF

    transistor smd 661 752

    Abstract: CLY 30 marking code 933 SMD Transistor TRANSISTOR SMD MARKING CODE p1 GPS05560 Q62702-L90 CLY 5 809 code Marking SOT-223 marking code s21 SMD Transistor
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 transistor smd 661 752 CLY 30 marking code 933 SMD Transistor TRANSISTOR SMD MARKING CODE p1 GPS05560 Q62702-L90 CLY 5 809 code Marking SOT-223 marking code s21 SMD Transistor PDF

    transistor smd code marking 561

    Abstract: smd marking 271 Sot GPS05560 Q62702-L99 GAAS FET AMPLIFIER 3400 Mhz TRANSISTOR SMD MARKING CODE 352 smd transistor 718
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		OT-223 Q62702-L99 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 smd marking 271 Sot GPS05560 Q62702-L99 GAAS FET AMPLIFIER 3400 Mhz TRANSISTOR SMD MARKING CODE 352 smd transistor 718 PDF

    marking code 933 SMD Transistor

    Abstract: transistor smd 661 752 CLY5 high power FET transistor s-parameters
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 marking code 933 SMD Transistor transistor smd 661 752 CLY5 high power FET transistor s-parameters PDF

    GaAs pHEMT LOW SOT-343

    Abstract: CLY 2
    Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		OT-363 VQFN-16-2 SCT-598 GaAs pHEMT LOW SOT-343 CLY 2 PDF

    N-Channel, Dual-Gate FET

    Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
    Text: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.


    OCR Scan     		OT-363 OT-363 VQFN-16-2 SCT-598 N-Channel, Dual-Gate FET CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET PDF