200938A
Abstract: SKY77336 GMSK applications Power Amplifier Module for GSM polar loop transmitter ohms-0 skyworks helios 12-PIN DCS1800 PCS1900
Text: APPLICATION NOTE SKY77336 Power Amplifier Module – Evaluation Information Applicability: SKY77336 Power Amplifier Modules INTRODUCTION The latest Skyworks GSM Power Amplifier Modules PAM featuring the new CMOS Collector Voltage Amplitude Controller (COVAC)
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SKY77336
200938A
GMSK applications
Power Amplifier Module for GSM
polar loop transmitter
ohms-0
skyworks helios
12-PIN
DCS1800
PCS1900
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bgy284e
Abstract: BGY502 BGY288 PHILIPS GSM ic Power Amplifier Module for GSM philips GSM 1800 transceiver pa 900 amplifier UAA3587
Text: BGY284E GSM/GPRS/EDGE Mobile phone RF power amplifier power amplifier module with integrated power control loop Measuring only 80 mm2, the BGY284E is an ultra-small GSM/GPRS/EDGE power amplifier module with an accurate, integrated power control loop. Combined with
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BGY284E
UAA3587E
BGY284E,
1800/1ly.
BGY502
BGY288
PHILIPS GSM ic
Power Amplifier Module for GSM
philips GSM 1800 transceiver
pa 900 amplifier
UAA3587
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Untitled
Abstract: No abstract text available
Text: LMV242 LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller Literature Number: SNWS014B LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier PA controller intended for
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LMV242
LMV242
SNWS014B
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BGY284
Abstract: BGY502 bgy284e
Text: BGY284 GSM quad-band amplifier Ultra-small power amplifier module with integrated power control loop Measuring only 64 mm2, the BGY284 is an ultra-small, GSM power-amplifier module with an integrated power control loop. Designed for 850, 900, 1800 and 1900 MHz GSM phones,
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BGY284
BGY284,
BGY502
bgy284e
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE SKY77354 Power Amplifier Module – Evaluation Board Information Applicability: SKY77354 Power Amplifier Module for Quad-Band GSM/ GPRS/ EDGE Introduction This Application Note provides the customer with information that will assist in the evaluation of the SKY77354 Power Amplifier
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SKY77354
EN40-D305-002)
GSM850/900,
DCS1800,
PCS1900.
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
CGY2010G
MGB764
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 12 Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45%
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CGY2013G
PCA5075
SA1620.
SCA50
647021/1200/01/pp12
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gsm signal amplifier
Abstract: Power Amplifier Module for GSM gsm 0308 DLT3202 GSM900 GSM RF module
Text: Preliminary DLT3202 3.5V Triple-Band Power Amplifier Module for GSM900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT3202 is a triple-band Power Amplifier Module PAM designed for used as the final RF amplifier in GSM900 and
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DLT3202
GSM900
DCS1800/PCS1900
DLT3202
gsm signal amplifier
Power Amplifier Module for GSM
gsm 0308
GSM RF module
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BGY502
Abstract: bgy284e BGY288 rf power amplifier 850 MHZ
Text: BGY288 GSM/GPRS quad-band amplifier Ultra-small RF power amplifier module for mobile phones with integrated power control loop Measuring only 64 mm2, the BGY288 is an ultra-small GSM/GPRS power amplifier module with an accurate, integrated power control loop. Designed for 850, 900, 1800
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BGY288
BGY288,
BGY502
bgy284e
rf power amplifier 850 MHZ
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DLT4204
Abstract: GSM900 gsm amplifier schematic
Text: Preliminary DLT4204 3.5V Quad-Band Power Amplifier Module for GSM850/900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT4204 is a quad-band Power Amplifier Module PAM designed for used as the final RF amplifier in GSM850/900
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GSM850/900
DCS1800/PCS1900
DLT4204
GSM850/900
GSM900
gsm amplifier schematic
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This
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MC33169/D
MC33169
MC33169
MC33169/D*
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ftx 79
Abstract: GMSK applications GSM900
Text: AWT6172 GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.3 PRODUCT DESCRIPTION features This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier
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AWT6172
GSM850/900
ftx 79
GMSK applications
GSM900
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GSM900
Abstract: AWT6172
Text: AWT6172 GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.4 PRODUCT DESCRIPTION features This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier
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GSM850/900
GSM900
AWT6172
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Untitled
Abstract: No abstract text available
Text: AWT6172 GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.4 PRODUCT DESCRIPTION features This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier
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GSM850/900
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smd marking AAAA
Abstract: marking gain stage GaAs MMIC AMPLIFIER 0.3 GMSK 0.3 GMSK 900mhz amplifier 900mhz HP MMIC marking code 5 smd marking f2 vtr 150 CGY92
Text: GaAs MMIC CGY92 Datasheet *Power amplifier for GSM or AMPS application *Fully integrated 2 stage amplifier *Operating voltage range: 2.7 to 6 V *Overall power added efficiency 45 %
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CGY92
Q68000-A8884
smd marking AAAA
marking gain stage GaAs MMIC AMPLIFIER
0.3 GMSK
0.3 GMSK 900mhz
amplifier 900mhz
HP MMIC
marking code 5
smd marking f2
vtr 150
CGY92
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GaAs MESFET amplifier with high input impedance
Abstract: mesfet datasheet by motorola DCS1800 GSM900 MMM5062 PCS1900
Text: Fact Sheet Freescale Semiconductor, Inc. MMM5062 QUAD-BAND, SINGLE POWER SUPPLY, POWER AMPLIFIER MODULE Freescale Semiconductor, Inc. For GSM/GPRS Handsets The MMM5062 is a Quad-Band, Single Power Supply, Power Amplifier Module for use in GSM/GPRS cellular
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MMM5062
MMM5062
50-ohm
GSM850ed
MMM5062FACT/D
GaAs MESFET amplifier with high input impedance
mesfet datasheet by motorola
DCS1800
GSM900
PCS1900
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power
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AWT0908
AWT0908X
AWT0908
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power
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AWT0908
AWT0908X
T0908
80MIL
330MIL
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply High Output Power
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AWT0904
AWT0904
100nF
470pF
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The A W T0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply
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AWT0904
T0904
AWT0904
100nF
470pF
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BGY46B
Abstract: TRANSISTOR regulator fm 513 diode piezoelectric mobile charger Analog Voice scrambler dtmf interface with microcontroller DTMF mobile fm operational amplifier SA612 All Microphone
Text: Philips Semiconductors Semiconductors for Telecom systems Alphanumeric index page BGY46A UHF power amplifier module 42 BGY46B UHF power amplifier module 43 BGY47A UHF power amplifier module 44 BGY95A/B UHF amplifier module 45 BGY96A/B UHF amplifier module
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BGY46A
BGY46B
BGY47A
BGY95A/B
BGY96A/B
BGY110D/E/F/G
BR211
BS107
BS108
BS170
TRANSISTOR regulator
fm 513 diode
piezoelectric mobile charger
Analog Voice scrambler
dtmf interface with microcontroller
DTMF mobile
fm operational amplifier
SA612
All Microphone
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HF power amplifier
Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
PCA5075
SA1620.
711062b
HF power amplifier
ze 003 ic
CGY2010G
LQFP48
LQFP64
LQFP80
PCA5075
SA1620
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CGY2013G
Abstract: LQFP48 PCA5075 SA1620 SMD0603
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
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CGY2013G
PCA5075
SA1620.
CGY2013G
711032t
010b027
LQFP48
PCA5075
SA1620
SMD0603
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Advance Information GaAs POWER AMPLIFIER SUPPORT IC GaAs Power Amplifier Support 1C The MC33169 is a support IC lo r G aAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs
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MC33169
DCS1800
MC33169
MRFIC0913,
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