180v dc motor speed control schematic
Abstract: aircraft logic gates DIH-129 DIH-149 DIH-169
Text: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIH-129, DIH-149, DIH-169 Power MOSFET N/O SPST Photovoltaic AC-DC Relay Features: Applications: Ø Ø Ø Ø Ø Ø 28V DC Aircraft Power Control &
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DIH-129,
DIH-149,
DIH-169
650VAC
STD-704.
MIL-STD-202
180v dc motor speed control schematic
aircraft logic gates
DIH-129
DIH-149
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Untitled
Abstract: No abstract text available
Text: IRF610A Advanced Power MOSFET Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge - 200 V ^ D S o n = 1.5 ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V I Low Rds(0n) ■ 1-169 £l(Typ.)
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IRF610A
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Untitled
Abstract: No abstract text available
Text: DI ON ICS INC 31E D B SflMflêOM ODODB'ib 3 B D I O POWER MOSFET PHOTOVOLTAIC RELAY AC/DC, SPST/NO DIH-129 D DIH-149 DIH-169 FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low level logic compatibility Optical Isolation, to 6 5 0 V AC Low on resistance
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DIH-129
IL-R-28750
DIH-149
DIH-169
000D3t
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sars03
Abstract: sars03 diode STR-E1555 STR-E1565 200W MOSFET POWER AMP SE024N str TV SMPS sars0 sanken hybrid Sanken CROSS
Text: PFC/DC-DC Systematic Combo Power IC STR-E1555 March, 2006 •General Description ■Package-SLA21Pin STR-E1555 is a Hybrid IC power-factor-corrected switching mode power supply SMPS . Start-up circuit and a controller of PFC and DC/DC parts are built in one chip. In addition,
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STR-E1555
Package---SLA21Pin
STR-E1555
I02-005EA-060322
sars03
sars03 diode
STR-E1565
200W MOSFET POWER AMP
SE024N
str TV SMPS
sars0
sanken hybrid
Sanken CROSS
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sars03
Abstract: sars03 diode STR-E1565 SE024N stre1565 str TV SMPS SE024 sars03 transistor 24V SMPS 200w circuit single output SANKEN 24V DC
Text: PFC/DC-DC Systematic Combo Power IC STR-E1565 •General Description September .2005 ■Package-SLA21Pin STR-E1565 is a Hybrid IC power-factor-corrected switching mode power supply SMPS . Start-up circuit and a controller of PFC and DC/DC parts are built in one chip. In addition,
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STR-E1565
Package---SLA21Pin
STR-E1565
I01-001EB-060302
sars03
sars03 diode
SE024N
stre1565
str TV SMPS
SE024
sars03 transistor
24V SMPS 200w circuit single output
SANKEN 24V DC
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Motorola 0936
Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP
Text: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen cies to 1.0 GHz. The high gain and broadband performance of this device
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945rola,
X34873Q-2
MRF184/D
Motorola 0936
305 Power Mosfet MOTOROLA
173 MHz RF CHIP
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XRF184
Abstract: MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA
Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistor MRF184 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device
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MRF184/D
MRF184
MRF184/D*
XRF184
MRF184
173 MHz RF CHIP
305 Power Mosfet MOTOROLA
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45n80c
Abstract: 800 coolmos
Text: IXKN 45N80C CoolMOS Power MOSFET VDSS = 800 V ID25 = 44 A RDS on max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used as main or Kelvin Source
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45N80C
OT-227
E72873
OT-227
45n80c
800 coolmos
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fast diode SOT-227
Abstract: No abstract text available
Text: IXKN 45N80C COOLMOS * Power MOSFET VDSS = 800 V ID25 = 44 A RDS on max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used
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45N80C
OT-227
E72873
OT-227
fast diode SOT-227
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ut40n03
Abstract: UT-40 a1693
Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
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UT40N03
UT40N03
UT40N03L-TN3-R
UT40N03G-TN3-R
UT40N03L-TM3-T
UT40N03G-TM3-T
O-252
O-251
QW-R502-160
UT-40
a1693
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Untitled
Abstract: No abstract text available
Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source
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75N60C
OT-227
20100609c
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sars03 diode
Abstract: diode sars03 sars03 chopper transformer winding formula STR-E1565 c1740s SE024N a933 transistor c1740-s STR-E1500
Text: STR-E1500 Family Application Note Sanken Electric Co., Ltd http://www.sanken-ele.co.jp STR-E1500 Family Application Note ///////////////// Contents ///////////////// 1 General Description 4 2 Features 4 3 STR-E1500 Family 4 Package Information 5 5 Block diagram
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STR-E1500
STR-E1565)
Part79
Page27
Page28
sars03 diode
diode sars03
sars03
chopper transformer winding formula
STR-E1565
c1740s
SE024N
a933 transistor
c1740-s
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j608
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the
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MRF6522
j608
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use
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MRF6522
31JUL04
31JAN05
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A1693
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number: UT40N03L
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UT40N03
UT40N03L
UT40N03-TN3-R
UT40N03L-TN3-R
UT40N03-TN3-T
UT40N03L-TN3-T
O-252
QW-R502-160
A1693
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Untitled
Abstract: No abstract text available
Text: IXUN 280N10 Advanced Technical Information VDSS = 100 V ID25 = 280 A Ω typ. RDS(on) = 3.9 mΩ Trench Power MOSFET Very low RDS(on) SOT-227 B, miniBLOC D KS G G S KS S D G = Gate S = Source D = Drain KS = Kelvin Source Features Symbol Conditions VDSS TJ = 25°C to 150°C
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280N10
OT-227
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ixun 350n10
Abstract: 350N10 IXUN350N10
Text: IXUN 350N10 Advanced Technical Information VDSS = 100 V ID25 = 350 A Ω typ. RDS(on) = 1.9 mΩ Trench Power MOSFET Very low RDS(on) SOT-227 B, miniBLOC D KS G G S KS S D G = Gate S = Source D = Drain KS = Kelvin Source Features Symbol Conditions VDSS TJ = 25°C to 150°C
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350N10
OT-227
ixun 350n10
350N10
IXUN350N10
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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MRF177/D
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VK200 INDUCTOR
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband
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MRF175GU/D
MRF175GV
MRF175GU
MRF175GU
MRF175GV
MRF175GU/D
VK200 INDUCTOR
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the
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MRF6522â
MRF6522-10R1
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MRF255 equivalent
Abstract: mrf255 mosfet MRF255 MRF255PHT arco 461 mica trimmer ES211 "RF MOSFETs" 100 watt hf mosfet 12 volt 14 watt hf mosfet 12 volt vdd 2204B
Text: MOTOROLA Order this document by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Effect Transistor N–Channel Enhancement–Mode 55 W, 12.5 Vdc, 54 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255/D
MRF255
MRF255/D*
DEVICEMRF255/D
MRF255 equivalent
mrf255 mosfet
MRF255
MRF255PHT
arco 461 mica trimmer
ES211
"RF MOSFETs"
100 watt hf mosfet 12 volt
14 watt hf mosfet 12 volt vdd
2204B
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zener diode 7c3
Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
Text: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255/D
2PHX34608Q
zener diode 7c3
electrolytic capacitor 470
Nippon capacitors
MRF255 equivalent
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547 MOSFET
Abstract: unelco 1073 Nippon capacitors
Text: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband
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MRF176GU/D
MRF176GU
MRF176GV
MRF176GU
MRF176GV
MRF176GU/D
547 MOSFET
unelco 1073
Nippon capacitors
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MRF151G
Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
Text: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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RF151G/D
MRF151G
L8776
Nippon capacitors
rf amplifier circuit mrf151g
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