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    POWER MOSFET 150 A Search Results

    POWER MOSFET 150 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET 150 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    150N15

    Abstract: E 150N10 150N10 9100pF
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20


    Original     		PDF 150N15 OT-227 E153432 150N15 E 150N10 150N10 9100pF

    Tf 227

    Abstract: No abstract text available
    Text: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM


    Original     		PDF 150N15 OT-227 Tf 227

    150N15

    Abstract: fast IXFX
    Text: HiPerFETTM Power MOSFETs IXFK 150N15 IXFX 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150


    Original     		PDF 150N15 150N15 fast IXFX

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C ISOPLUS220LV 728B1 065B1 123B1

    CoolMOS Power Transistor

    Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C E153432 065B1 728B1 123B1 CoolMOS Power Transistor POWER MOSFET 4600 UPS SIEMENS 25N80C

    Untitled

    Abstract: No abstract text available
    Text: FQA46N15 N-Channel QFET MOSFET 150 V, 50 A, 42 mΩ Features Description • 50 A, 150 V, RDS on = 42 mΩ (Max) @VGS = 10 V, ID = 25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQA46N15

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.


    Original     		PDF UTT150N06 UTT150N06 102nC) UTT150N06L-TA3-T UTT150N06G-TA3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.


    Original     		PDF UTT150N06 UTT150N06 102nC) O-220 QW-R502-512

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Standard Power MOSFET IXTH 60N15 VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150


    Original     		PDF 60N15 O-247 728B1 123B1 728B1 065B1

    150N15

    Abstract: No abstract text available
    Text: IXFK 150N15 IXFX 150N15 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150


    Original     		PDF O-264 150N15 150N15

    60N15

    Abstract: No abstract text available
    Text: Advance Technical Information Standard Power MOSFET VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ IXTH 60N15 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150


    Original     		PDF 60N15 O-247 728B1 123B1 728B1 065B1 60N15

    SQD25N15-52-GE3

    Abstract: C4825
    Text: SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) (Ω) at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25 Configuration


    Original     		PDF SQD25N15-52 AEC-Q101 O-252 2002/95/EC SQD25N15-52-GE3 18-Jul-08 SQD25N15-52-GE3 C4825

    SQM85N15-19-GE3

    Abstract: No abstract text available
    Text: SQM85N15-19 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) (Ω) at VGS = 10 V 0.019 ID (A) • TrenchFET Power MOSFET 85 Configuration


    Original     		PDF SQM85N15-19 2002/95/EC AEC-Q101 O-263 SQM85N15-19-GE3 18-Jul-08 SQM85N15-19-GE3

    SUD25N15-52

    Abstract: No abstract text available
    Text: SUD25N15-52 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 25 0.060 @ VGS = 6 V 23 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS


    Original     		PDF SUD25N15-52 O-252 S-05234--Rev. 17-Dec-01 SUD25N15-52

    150T4

    Abstract: NTD3055 NTD3055-150 RG 702
    Text: NTD3055-150 Power MOSFET 9.0 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES 60 VOLTS RDS on = 150 mΩ Typical Applications


    Original     		PDF NTD3055-150 tpv10 tpv10 r14525 NTD3055 150/D 150T4 NTD3055-150 RG 702

    3150g MOSFET

    Abstract: No abstract text available
    Text: NTD3055-150, NVD3055-150 Power MOSFET 9.0 A, 60 V, N−Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD3055-150, NVD3055-150 NTD3055â 150/D 3150g MOSFET

    75n15

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS


    Original     		PDF 75N15 75N15 O-247 O-268 O-268 728B1

    solar inverter circuit

    Abstract: D-68623
    Text: Advanced Technical Information FMM 65-015P ID25 Trench Power MOSFET = 65 A = 150 V Ω = 12.5 mΩ VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM T1 T2 1 5 MOSFET T1/T2 Features Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 150 V ±20 V ID25


    Original     		PDF 65-015P D-68623 65-015P solar inverter circuit

    Si2325DS

    Abstract: MS1117
    Text: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		PDF Si2325DS O-236 OT-23) 18-Jul-08 MS1117

    Untitled

    Abstract: No abstract text available
    Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested


    Original     		PDF SQD25N15-52 AEC-Q101 O-252 SQD25N15-52-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7956DP

    Abstract: No abstract text available
    Text: Si7956DP New Product Vishay Siliconix Dual N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 4.1 0.115 @ VGS = 6 V 3.9 D TrenchFETr Power MOSFET D Low On-Resistance in New Low Thermal Resistance PowerPAKr Package


    Original     		PDF Si7956DP Si7956DP-T1--E3 S-41071--Rev. 31-May-04

    si3440

    Abstract: Si3440DV Si3440DV-T1 SI3440DV-T1-E3 TSOP-6 .54
    Text: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V


    Original     		PDF Si3440DV Si3440DV-T1--E3 S-32412--Rev. 24-Nov-03 si3440 Si3440DV-T1 SI3440DV-T1-E3 TSOP-6 .54

    starter/generator

    Abstract: D-68623
    Text: Advanced Technical Information FMM 150-0075P ID25 Trench Power MOSFET = 150 A = 75 V Ω = 4.7 mΩ VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM T1 T2 1 5 MOSFET T1/T2 Features Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 75 V ±20 V ID25


    Original     		PDF 150-0075P 200IXYS D-68623 150-0075P starter/generator

    Si2325DS

    Abstract: No abstract text available
    Text: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)


    Original     		PDF Si2325DS O-236 OT-23) 08-Apr-05