C528 transistors
Abstract: C528 DIODE
Text: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353
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075BV0SS
C-527
IRFP350,
IRFP351,
IRFP352,
IRFP353
T-39-15
C-528
C528 transistors
C528 DIODE
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PLCC-6 5050
Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case
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SA146RS
PLCC-6 5050
P-Channel mosfet 400v to220
pj 84
elmwood 2450
MOSFET 400V depletion p channel
240v n-channel depletion mosfet
mosfet driver 400v
ks 4290
P-Channel Depletion-Mode
HT0440LG
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power mosfet 350v 30a to 247
Abstract: No abstract text available
Text: Power MOSFET IXKK85N60C CoolMOSTM Superjunction MOSFET VDSS ID25 RDS on D Low RDS(on), High Voltage = = ≤ 600V 85A Ω 36mΩ G S TO-264 G D S Symbol Test Conditions VDSS TJ = 25°C Maximum Ratings 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C
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IXKK85N60C
O-264
ID100
power mosfet 350v 30a to 247
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47N60C
Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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47N60C
O-247
E72873
ID100
20080523a
47N60C
47n60
power mosfet 350v 30a to 247
UPS SIEMENS
E72873
ID100
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47N60C
Abstract: No abstract text available
Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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47N60C
O-247
E72873
ID100
20080523a
47N60C
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apt47n60
Abstract: TRANSISTORS 132 GD
Text: APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω Super Junction MOSFET D3PAK COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package D
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APT47N60BC3
APT47N60SC3
O-247
O-247
apt47n60
TRANSISTORS 132 GD
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Untitled
Abstract: No abstract text available
Text: APT17N80BC3 800V 17A 0.290Ω Super Junction MOSFET COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APT17N80BC3
O-247
O-247
APT17N80BC3
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Untitled
Abstract: No abstract text available
Text: APT11N80BC3 800V 11A 0.450Ω Super Junction MOSFET COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APT11N80BC3
O-247
O-247
APT11N80BC3
Avala-7136
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DD2030
Abstract: 650V power mosfet 350v 30a to 247
Text: APT47N65BC3 600V 47A 0.070Ω Super Junction MOSFET TO COOLMOS -24 7 Power Semiconductors D3 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package
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APT47N65BC3
O-247
DD2030
650V
power mosfet 350v 30a to 247
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Untitled
Abstract: No abstract text available
Text: APT47N65BC3 650V 47A 0.070 Super Junction MOSFET TO -24 7 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package All Ratings: TC = 25°C unless otherwise specified.
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APT47N65BC3
O-247
APT30DF60
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Untitled
Abstract: No abstract text available
Text: APT17N80BC3 APT17N80SC3 0.290Ω 800V 17A Super Junction MOSFET COOLMOS D3PAK TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package D
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APT17N80BC3
APT17N80SC3
O-247
O-247
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Untitled
Abstract: No abstract text available
Text: APT47N65BC3 650V 47A 0.070Ω Super Junction MOSFET TO -24 7 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package All Ratings: TC = 25°C unless otherwise specified.
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APT47N65BC3
O-247
APT47N65BC3
APT30DF60
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Untitled
Abstract: No abstract text available
Text: APT47N60BC3 G APT47N60SC3(G) 600V 47A 0.070 TO Super Junction MOSFET -24 7 D 3 PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package.
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APT47N60BC3
APT47N60SC3
O-247
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APT47N60BC3
Abstract: APT47N60SC3
Text: APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS
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APT47N60BC3
APT47N60SC3
O-247
O-247
APT47N60BC3
APT47N60SC3
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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Untitled
Abstract: No abstract text available
Text: APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω Super Junction MOSFET COOL MOS Po we r Se miconduc tors • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package
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APT47N65BC3
APT47N65SC3
O-247
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STW9NC70Z
Abstract: No abstract text available
Text: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
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STW9NC70Z
O-247
STW9NC70Z
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power mosfet 350v 35a to 247
Abstract: STW8NC70Z
Text: STW8NC70Z N-CHANNEL 700V - 1.1 Ω - 7A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW8NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.38 Ω 7A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
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STW8NC70Z
O-247
power mosfet 350v 35a to 247
STW8NC70Z
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STW8NC70Z
Abstract: power mosfet 350v to 247
Text: STW8NC70Z N-CHANNEL 700V - 1.1 Ω - 7A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW8NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.38 Ω 7A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
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STW8NC70Z
O-247
STW8NC70Z
power mosfet 350v to 247
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STW9NC70Z
Abstract: TL 078
Text: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
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STW9NC70Z
O-247
STW9NC70Z
TL 078
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Diode zener 3a
Abstract: STW10NC70Z
Text: STW10NC70Z N-CHANNEL 700V - 0.6 Ω - 10.6A TO-247 Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE STW10NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 0.75 Ω 10.6 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES
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STW10NC70Z
O-247
Diode zener 3a
STW10NC70Z
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STW10NC70Z
Abstract: No abstract text available
Text: STW10NC70Z N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW10NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 0.75 Ω 10.6 A TYPICAL RDS(on) = 0.58 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
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STW10NC70Z
O-247
STW10NC70Z
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94n60
Abstract: IXKK94N60C3 94N60C3 UPS SIEMENS ID100
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 94N60C3 VDSS = 600 V ID25 = 94 A Ω RDS on = 35 mΩ Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1
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94N60C3
ID100
O-264
728B1
065B1
123B1
94n60
IXKK94N60C3
94N60C3
UPS SIEMENS
ID100
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85N60C
Abstract: CoolMOS Power Transistor ID100 UPS SIEMENS
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 85N60C VDSS = 600 V = 85 A ID25 Ω RDS on = 36 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings TO-264 VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20
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85N60C
ID100
O-264
85N60C
CoolMOS Power Transistor
ID100
UPS SIEMENS
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