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    POWER MOSFET 50V 10A Search Results

    POWER MOSFET 50V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    POWER MOSFET 50V 10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94192D HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.11Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


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    PD-94192D O-257AA) IRL7Y1905C O-257AC 5M-1994. O-257AA. PDF

    IRL7Y1905C

    Abstract: No abstract text available
    Text: PD - 94192C HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


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    94192C O-257AA) IRL7Y1905C O-257AA. 5M-1994. O-257AA IRL7Y1905C PDF

    IRL7Y1905C

    Abstract: No abstract text available
    Text: PD - 94192 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


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    O-257AA) IRL7Y1905C 5M-1994. O-257AA IRL7Y1905C PDF

    IRL7Y1905C

    Abstract: No abstract text available
    Text: PD - 94192B HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


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    94192B O-257AA) IRL7Y1905C 5M-1994. O-257AA IRL7Y1905C PDF

    VRF150

    Abstract: hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET
    Text: 150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF150 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V 150W WITH 18dB MIN GAIN @ 30MHz, 50V


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    150MHz VRF150 150MHz, 30MHz, VRF150 250mA, hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET PDF

    VRF151

    Abstract: vertical mosfet RF POWER VERTICAL MOSFET
    Text: 150W, 50V, 175MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF151 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V


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    175MHz VRF151 175MHz, 30MHz, VRF151 vertical mosfet RF POWER VERTICAL MOSFET PDF

    IRF7103Q

    Abstract: No abstract text available
    Text: PD - 93944D IRF7103Q AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats VDSS Benefits 50V l l l l l l Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance


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    93944D IRF7103Q EIA-481 EIA-541. IRF7103Q PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96101A IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l


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    6101A IRF7103QPbF EIA-481 EIA-541. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96101B IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l


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    96101B IRF7103QPbF EIA-481 EIA-541. PDF

    2843000202

    Abstract: 4406 mosfet 300 watt mosfet amplifier Amp. mosfet 1000 watt ARF441 Fair-Rite bead 13.56MHZ mosfet ARF440 mosfet power amplifier pulse transformer
    Text: D TO-247 G ARF440 ARF441 S 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull


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    O-247 ARF440 ARF441 56MHz ARF440 ARF441. 1-15MHz ARF441 2843000202 4406 mosfet 300 watt mosfet amplifier Amp. mosfet 1000 watt Fair-Rite bead 13.56MHZ mosfet mosfet power amplifier pulse transformer PDF

    2843000202

    Abstract: ARF440 ARF441 power amplifier, 13.56MHz ARF440 300 watt mosfet amplifier Fair-Rite bead F624-19Q1 13.56Mhz rf amplifier F624-19-Q1 13.56MHz
    Text: D TO-247 G ARF440 ARF441 S 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull


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    O-247 ARF440 ARF441 56MHz ARF440 ARF441. 1-15MHz ARF441 2843000202 power amplifier, 13.56MHz ARF440 300 watt mosfet amplifier Fair-Rite bead F624-19Q1 13.56Mhz rf amplifier F624-19-Q1 13.56MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 93944D IRF7103Q AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats VDSS Benefits 50V l l l l l l RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V


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    93944D IRF7103Q EIA-481 EIA-541. PDF

    transformer 0-12v

    Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
    Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 transformer 0-12v J101 0-12V 2204B MRF151 Transistor C2 Unelco J101 PDF

    blf177

    Abstract: 2204B MRF151 VRF152
    Text: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF152 175MHz VRF152 30MHz, 175MHz, MRF151/ BLF177/ SD2941 blf177 2204B MRF151 PDF

    "RF MOSFET" 300W

    Abstract: arco 467 trimmer 300WF
    Text: VRF2933 50V 300W 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation


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    VRF2933 150MHz VRF2933 30MHz, "RF MOSFET" 300W arco 467 trimmer 300WF PDF

    Unelco J101

    Abstract: VK200-4B vk200 vrf150 50v L4
    Text: VRF150 50V 150W 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation


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    VRF150 150MHz VRF150 150MHz, 30MHz, Unelco J101 VK200-4B vk200 50v L4 PDF

    VK200-4B

    Abstract: diode 4937 J101 VRF151 0-12V 2204B MRF151
    Text: VRF151 PRELIMINARY 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 VK200-4B diode 4937 J101 0-12V 2204B MRF151 PDF

    mrf 510

    Abstract: VK200-4B VRF150 60WV MRF 283 J101 0-12V 2204B Unelco j101
    Text: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF150 150MHz VRF150 150MHz, 30MHz, mrf 510 VK200-4B 60WV MRF 283 J101 0-12V 2204B Unelco j101 PDF

    MRF 283

    Abstract: vrf150
    Text: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF150 150MHz VRF150 150MHz, 30MHz, MRF 283 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF151 VRF151MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF151 VRF151MP 175MHz VRF151 30MHz, 175MHz, MRF151 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF150 VRF150MP 150MHz VRF150 150MHz, 30MHz, MRF150 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF152 VRF152MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF152 VRF152MP 175MHz VRF152 30MHz, 175MHz, MRF151/ BLF177/ SD2941 PDF

    SD2941-10

    Abstract: 2204B VRF152 VRF152E SD2941
    Text: VRF152E 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


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    VRF152E 175MHz VRF152E VRF152. M174A 30MHz, 175MHz, SD2941-10 Com44 SD2941-10 2204B VRF152 SD2941 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    VRF161 150MHz 30MHz, 150MHz, MRF151 PDF