irf52 0
Abstract: No abstract text available
Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()
|
Original
|
IRF520
IRF52
O220AB
IRF520
irf52 0
|
PDF
|
Power MOSFETs Application Notes irf520
Abstract: IRF520 application note irf520 mosfet IRF520 TB334
Text: IRF520 Data Sheet January 2002 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
Original
|
IRF520
TA09594.
Power MOSFETs Application Notes irf520
IRF520 application note
irf520 mosfet
IRF520
TB334
|
PDF
|
transistor IRF520
Abstract: irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334
Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET 1574.4 Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
Original
|
IRF520
TA09594.
transistor IRF520
irf520 mosfet
37ag
transistor equivalent irf520
IRF520
TB334
|
PDF
|
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
|
Original
|
SC70-6
SC75-6
SuperSOTTM-3/SOT-23
Power247TM,
FLMP SuperSOT-6
Complementary MOSFETs buz11
FQD7P20
FDG6316
IRF650
FQP65N06
IRFS630
FDG329N
FDP2532
fqpf6n80
|
PDF
|
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
|
Original
|
SC70-6
OT-23)
FDR8321L
FDR8521L
FDFS2P106A
FDFS2P103
FDFS2P102
SSP6N60A
IRF650
IRF540 mosfet with maximum VDS 12v
SSP2N60B
SSS7N60B
ssr2955
IRFS630A
SSP4N60A
sss3n90a
IRF634A
|
PDF
|
IRF510N
Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5
|
Original
|
MS-012AA
TS-001AA
MO-169AB
RF1K49090
RF1K49093
RF1K49092
RF3S49092SM
RF3V49092
RF1K49223
RF1K49088
IRF510N
MOSFET Selection Guide
Power MOSFET Selection Guide
IRFR110N
HRF3205 equivalent
RFD7N10LESM
IRFD110
IRFD9120
IRFP9150
irfu9220
|
PDF
|
irf540n irf640
Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S
|
Original
|
BUZ11
BUZ71
BUZ71A
BUZ72A
HRF3205
HRF3205S
HRFZ44N
HUF75307D3
HUF75307D3S
HUF75307P3
irf540n irf640
IRF630 complementary
IRF840 complementary
irf630 irf640
IRF730 complementary
irfp460 complementary
MOSFET IRF540n complementary
Complementary MOSFETs buz11
IRF9540 complementary
Irfp250 irfp460
|
PDF
|
Irf640 irf9540
Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF
|
OCR Scan
|
2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
Irf640 irf9540
IRFR220TF
IRF510 mosfet irf640
451 MOSFET
KSP44
IRFR9120-TF
STR 456
2n3904 2n3906
KST2222ATF
IRFR120TF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics
|
OCR Scan
|
IRF520
O-220AB
TB334
TA09594.
|
PDF
|
irf840 mosfet drive circuit diagram
Abstract: 7170 MOSFET MIC44XX IRFZ44 mosfet switching circuit IRF510 application note power MOSFET IRF740 driver circuit MOSFET IRF740 as switch irf510 switch power MOSFET IRF610 circuit diagram of mosfet based power supply
Text: Application Note 24 Designing with Low-Side MOSFET Drivers by John McGinty Introduction The proper marriage of a MOSFET driver to a power MOS FET is essential for optimized switch performance. Designing for adequate gate drive, resulting in fast rise and fall times of
|
OCR Scan
|
MIC4416
OT-143
IRF7413
MIC4416/17
irf840 mosfet drive circuit diagram
7170 MOSFET
MIC44XX
IRFZ44 mosfet switching circuit
IRF510 application note
power MOSFET IRF740 driver circuit
MOSFET IRF740 as switch
irf510 switch
power MOSFET IRF610
circuit diagram of mosfet based power supply
|
PDF
|
IRF520S
Abstract: SiHF520S SiHF520S-E3
Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the
|
Original
|
IRF520S,
SiHF520S
O-263)
18-Jul-08
IRF520S
SiHF520S-E3
|
PDF
|
IRF1010
Abstract: 4.5v to 100v input regulator
Text: PD - 94819 IRF520VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.165Ω
|
Original
|
IRF520VPbF
O-220
universally1010
IRF1010
4.5v to 100v input regulator
|
PDF
|
IRF1010
Abstract: 4.5v to 100v input regulator
Text: PD - 94819 IRF520VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.165Ω
|
Original
|
IRF520VPbF
O-220
O-220AB
IRF1010
IRF1010
4.5v to 100v input regulator
|
PDF
|
4.5v to 100v input regulator
Abstract: IRF520VSPbF
Text: PD - 95484 IRF520VSPbF IRF520VLPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D
|
Original
|
IRF520VSPbF
IRF520VLPbF
power26)
EIA-418.
4.5v to 100v input regulator
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: International i ^ Reclifier PD91340 IRF520NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D escriptio n Fifth Generation HEXFETs from International Rectifier
|
OCR Scan
|
IRF520NS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature
|
OCR Scan
|
IRF520A
QQ3b32fl
3b32ti
O-220
7Tb4142
DD3b33D
|
PDF
|
IRF520NPBF
Abstract: IRF1010 4.5v to 100v input regulator
Text: PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
|
Original
|
IRF520NPbF
O-220
O-220AB.
O-220AB
IRF1010
IRF520NPBF
IRF1010
4.5v to 100v input regulator
|
PDF
|
IRF1010
Abstract: IRF520NPBF 4.5v to 100v input regulator
Text: PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
|
Original
|
IRF520NPbF
O-220
O-220AB.
O-220AB
IRF1010
IRF1010
IRF520NPBF
4.5v to 100v input regulator
|
PDF
|
IRF1010
Abstract: irf1010 MOSFET
Text: PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
|
Original
|
IRF520NPbF
O-220
O-220AB.
O-220AB
IRF1010
IRF1010
irf1010 MOSFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-91340A International IÖR Rectifier IRF520NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF520NS • Low-profile through-hole (IRF520NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V
|
OCR Scan
|
IRF520NS)
IRF520NL)
PD-91340A
IRF520NS/L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94818 IRF520NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
|
Original
|
IRF520NPbF
O-220
O-220AB.
O-220AB
IRF1010
|
PDF
|
AN-994
Abstract: IRF520V IRF520VL IRF520VS IRF530S 4.5v to 100v input regulator IRF520VSPbF
Text: PD - 95484 IRF520VSPbF IRF520VLPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D
|
Original
|
IRF520VSPbF
IRF520VLPbF
EIA-418.
AN-994
IRF520V
IRF520VL
IRF520VS
IRF530S
4.5v to 100v input regulator
IRF520VSPbF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature
|
Original
|
IRF520S,
SiHF520S
2002/95/EC
O-263)
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD -91340A IRF520NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF520NS Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.20Ω G ID = 9.7A S
|
Original
|
-91340A
IRF520NS/L
IRF520NS)
IRF520NL)
cap245,
|
PDF
|
