POWER MOSFET REFERENCE Search Results

POWER MOSFET REFERENCE Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

POWER MOSFET REFERENCE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TPD7100F Abstract: No abstract text available Text: TPD7100F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7100F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7100F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective	Original	TPD7100F TPD7100F	PDF
TPD7101F Abstract: Application Report mosfet diagram Text: TPD7101F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7101F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective	Original	TPD7101F TPD7101F Application Report mosfet diagram	PDF
HIGH POWER MOSFET TOSHIBA Abstract: all mosfet power TPD7101F MOSFET TOSHIBA Text: TPD7101F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7101F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective	Original	TPD7101F TPD7101F HIGH POWER MOSFET TOSHIBA all mosfet power MOSFET TOSHIBA	PDF
Untitled Abstract: No abstract text available Text: TPD7101F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7101F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective	Original	TPD7101F TPD7101F	PDF
TPD7101F Abstract: No abstract text available Text: TPD7101F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7101F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective	Original	TPD7101F TPD7101F	PDF
TPD7100F Abstract: On semiconductor power MOSFET reliability report power MOSFET reliability report MOSFET reliability report MOSFET TOSHIBA Text: TPD7100F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7100F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7100F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective	Original	TPD7100F TPD7100F On semiconductor power MOSFET reliability report power MOSFET reliability report MOSFET reliability report MOSFET TOSHIBA	PDF
Untitled Abstract: No abstract text available Text: TPD7100F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7100F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7100F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective	Original	TPD7100F TPD7100F	PDF
2N7225U Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225 Text: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry	Original	PD-91549B IRFN250 JANTX2N7225U JANTXV2N7225U MIL-PRF-19500/592] 2N7225U SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225	PDF
2n7224U Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U Text: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry	Original	PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U MIL-PRF-19500/592] 100Volt, 2n7224U IRFN150 JANTX2N7224U JANTXV2N7224U	PDF
SMD1P Abstract: 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44 Text: PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U HEXFET POWER MOSFET [REF:MIL-PRF-19500/596] N - CHANNEL Ω MOSFET 500 Volt, 0.85Ω Product Summary HEXFET® power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry	Original	PD-91552B IRFN440 JANTX2N7222U JANTXV2N7222U MIL-PRF-19500/596] SMD1P 2N7222U IRFN440 JANTX2N7222U JANTXV2N7222U irfn44	PDF
2N7236U Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U Text: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry	Original	PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U MIL-PRF-19500/595] 2N7236U smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U	PDF
Untitled Abstract: No abstract text available Text: Power MOSFET Electrical Characteristics Power MOSFET in Detail 4. Electrical Characteristics 4.1 Terminology The following is an explanation of main items used to evaluate power MOSFET performance. 1 \|Yfs\|: forward transfer admittance \|Yfs\| = ΔID/ΔVGS	Original		PDF
Untitled Abstract: No abstract text available Text: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features Power MOSFET gate driver for half-bridge	Original	TPD7211F TPD7211F SON8-P-0303-0 7211F	PDF
F5055 Abstract: TRAF FUSE FUJI Text: http://www.fujisemi.com F5055 FUJI Intelligent Power MOSFET Intelligent Power MOSFET Features Outline drawings [mm] • Two N-ch power MOSFET circuits • Over temperature protection • Short circuit protection • Low on-resistance • High speed switching	Original	F5055 SSOP-20 F5055 TRAF FUSE FUJI	PDF

F5033 Abstract: MOSFET 30v sop-8 Text: http://www.fujisemi.com F5033 FUJI Intelligent Power MOSFET Intelligent Power MOSFET Features Outline drawings [mm] • Two N-ch power MOSFET circuits • Over temperature protection • Short circuit protection • Low on-resistance • High speed switching	Original	F5033 1000mm2PCB F5033 MOSFET 30v sop-8	PDF
2N6782 Abstract: 2N67 TB334 Text: [ /Title 2N67 82 /Subject (3.5A, 100V, 0.600 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Fairchild Corporation, NChannel Power MOSFET, TO205AF ) /Creator () /DOCI NFO pdfmark 2N6782 Data Sheet December 2001 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET	Original	O205AF 2N6782 2N6782 2N67 TB334	PDF
f5041 Abstract: No abstract text available Text: http://www.fujisemi.com F5041 FUJI Intelligent Power MOSFET Intelligent Power MOSFET Features Outline drawings [mm] • Two N-ch power MOSFET circuits • Over temperature protection • Short circuit protection • Low on-resistance • High speed switching	Original	F5041 1000ming f5041	PDF
F5041 Abstract: mosfet vgs 5v FUJI fuse MOSFET 30v sop-8 Text: http://www.fujisemi.com F5041 FUJI Intelligent Power MOSFET Intelligent Power MOSFET Features Outline Drawings [mm] • Two N-ch power MOSFET circuits • Over temperature protection • Short circuit protection • Low on-resistance • High speed switching	Original	F5041 F5041 mosfet vgs 5v FUJI fuse MOSFET 30v sop-8	PDF
F5033 Abstract: fuji semiconductor catalog Text: http://www.fujisemi.com F5033 FUJI Intelligent Power MOSFET Intelligent Power MOSFET Features Outline Drawings [mm] • Two N-ch power MOSFET circuits • Over temperature protection • Short circuit protection • Low on-resistance • High speed switching	Original	F5033 F5033 fuji semiconductor catalog	PDF
BUZ11 Abstract: buz11 application note BUZ1 TB334 TA9771 Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features	Original	BUZ11 O220AB BUZ11 buz11 application note BUZ1 TB334 TA9771	PDF
equivalent 2sk2837 mosfet Abstract: No abstract text available Text: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s	Original		PDF
500w mosfet power amplifier circuit diagram Abstract: RF POWER MOSFET IXZ421DF18N50 500w hf power amplifier circuit diagram power mosfet triggering circuit DEIC421 mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier Text: IXZ421DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC421 Driver combined with a IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability	Original	IXZ421DF18N50 DEIC421 IXZ318N50 IXZ421DF18N50 500w mosfet power amplifier circuit diagram RF POWER MOSFET 500w hf power amplifier circuit diagram power mosfet triggering circuit mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.	Original	UT2305 UT2305 UT2305L-AE2-R UT2305G-AE2-R UT2305L-AE3-R UT2305G-AE3-R UT2305L-AG3-R UT2305G-AG3-R OT-23-3 OT-23	PDF
BUZ71 application Abstract: No abstract text available Text: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features	Original	BUZ71 O220AB TA9770. BUZ71 application	PDF

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POWER MOSFET REFERENCE Search Results

POWER MOSFET REFERENCE Result Highlights (5)

POWER MOSFET REFERENCE Datasheets Context Search

TPD7100F

TPD7101F

HIGH POWER MOSFET TOSHIBA

Untitled

TPD7101F

TPD7100F

Untitled

2N7225U

2n7224U

SMD1P

2N7236U

Untitled

Untitled

F5055

F5033

2N6782

f5041

F5041

F5033

BUZ11

equivalent 2sk2837 mosfet

500w mosfet power amplifier circuit diagram

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BUZ71 application