KTHC5513
Abstract: No abstract text available
Text: IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS on in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin
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KTHC5513
KTHC5513
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P Channel Low Gate Charge
Abstract: KTHD3100C
Text: IC IC SMD Type Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25
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KTHD3100C
P Channel Low Gate Charge
KTHD3100C
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Untitled
Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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PD-91543C
IRFN054
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IRFN054
Abstract: No abstract text available
Text: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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91543B
IRFN054
IRFN054
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IRFN054
Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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PD-91543C
IRFN054
IRFN054
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Untitled
Abstract: No abstract text available
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics
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NTHD3101F
Dra17.
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Untitled
Abstract: No abstract text available
Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1555A
IRFNG40
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Untitled
Abstract: No abstract text available
Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) 0.04 Ω IRFN044 ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1545A
IRFN044
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smd marking DA QT
Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
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NTHD3133PF
NTDH3133PF/D
smd marking DA QT
24W16
C2608
SMD mosfet MARKING code TJ
NTHD3133PFT1G
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Untitled
Abstract: No abstract text available
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
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NTHD3133PF
NTDH3133PF/D
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IRFNG50
Abstract: mosfet 10a 800v high power 91556A
Text: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1556A
IRFNG50
IRFNG50
mosfet 10a 800v high power
91556A
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smd diode 39a
Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1555A
IRFNG40
smd diode 39a
mosfet 10a 800v
IRFNG40
mosfet 10a 800v high power
smd+diode+39a
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IRFN044
Abstract: smd diode 44a
Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1545A
IRFN044
IRFN044
smd diode 44a
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IRHNB7360SE
Abstract: No abstract text available
Text: PD - 91740B IRHNB7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-3 International Rectifiers RADHardTM HEXFET® MOSFET
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91740B
IRHNB7360SE
MIL-STD-750,
MlL-STD-750,
IRHNB7360SE
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IRHNA7264SE
Abstract: RAD-HARD
Text: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91432C
IRHNA7264SE
MIL-STD-750,
MlL-STD-750,
IRHNA7264SE
RAD-HARD
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IRHNA7460SE
Abstract: HEXFET Power MOSFET SMD2
Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91399B
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
IRHNA7460SE
HEXFET Power MOSFET SMD2
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IRHNA7360SE
Abstract: No abstract text available
Text: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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PD-91398B
IRHNA7360SE
12volt
MIL-STD-750,
320volt
MlL-STD-750,
IRHNA7360SE
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IRHNA7460SE
Abstract: No abstract text available
Text: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifiers RADHardTM HEXFET® MOSFET
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1399A
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
IRHNA7460SE
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IRHN7250SE
Abstract: No abstract text available
Text: PD - 91780B IRHN7250SE 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A SMD-1 International Rectifier’s RADHardTM HEXFET® MOSFET
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91780B
IRHN7250SE
MIL-STD-750,
MlL-STD-750,
IRHN7250SE
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Untitled
Abstract: No abstract text available
Text: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91432C
IRHNA7264SE
MIL-STD-750,
MlL-STD-750,
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IRHNA7360SE
Abstract: No abstract text available
Text: PD - 91398A IRHNA7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifiers RADHardTM HEXFET® MOSFET
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1398A
IRHNA7360SE
MIL-STD-750,
MlL-STD-750,
IRHNA7360SE
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IRHNB7264SE
Abstract: No abstract text available
Text: PD - 91738A IRHNB7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-3 International Rectifiers RADHardTM HEXFET® MOSFET
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1738A
IRHNB7264SE
MIL-STD-750,
MlL-STD-750,
IRHNB7264SE
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Untitled
Abstract: No abstract text available
Text: PD - 91738A IRHNB7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-3 International Rectifiers RADHardTM HEXFET® MOSFET
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1738A
IRHNB7264SE
MIL-STD-750,
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 2.2 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • MOSFET Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
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