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    POWER MOSFET SO8 FL Search Results

    POWER MOSFET SO8 FL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    POWER MOSFET SO8 FL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDS7066ASN3

    Abstract: FDS7066N3
    Text: FDS7066ASN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066ASN3 is designed to replace a single SO8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a


    Original     		FDS7066ASN3 FDS7066ASN3 FDS7066N3 PDF

    NTMFS4849NT1G

    Abstract: NTMFS4849NT3G
    Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4849N AND8195/D NTMFS4849N/D NTMFS4849NT1G NTMFS4849NT3G PDF

    4946n

    Abstract: mosfet 4946n
    Text: NTMFS4946N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4946N NTMFS4946N/D 4946n mosfet 4946n PDF

    NTMFS4846N

    Abstract: NTMFS4846NT1G NTMFS4846NT3G
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package


    Original     		NTMFS4846N NTMFS4846N/D NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G PDF

    4946n

    Abstract: No abstract text available
    Text: NTMFS4946N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4946N NTMFS4946N/D 4946n PDF

    NTMFS4849NT1G

    Abstract: NTMFS4849NT3G
    Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package


    Original     		NTMFS4849N NTMFS4849N/D NTMFS4849NT1G NTMFS4849NT3G PDF

    4851N

    Abstract: NTMFS4851NT1G NTMFS4851NT3G
    Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4851N AND8195/D NTMFS4851N/D 4851N NTMFS4851NT1G NTMFS4851NT3G PDF

    4846N

    Abstract: NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G mosfet 4846n
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4846N AND8195/D NTMFS4846N/D 4846N NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G mosfet 4846n PDF

    4851N

    Abstract: NTMFS4851NT1G NTMFS4851NT3G
    Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package


    Original     		NTMFS4851N NTMFS4851N/D 4851N NTMFS4851NT1G NTMFS4851NT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4946N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4946N NTMFS4946N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V


    Original     		ITF86182SK8T MS-012AA) PDF

    to220 pcb footprint

    Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
    Text: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.


    Original     		soldering/sot669 to220 pcb footprint "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package PDF

    ITF86182SK8T

    Abstract: MS-012AA TB370
    Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V


    Original     		ITF86182SK8T MS-012AA) ITF86182SK8T MS-012AA TB370 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4846N AND8195/D NTMFS4846N/D PDF

    NTMFS4849NT1G

    Abstract: NTMFS4849NT3G
    Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4849N AND8195/D NTMFS4849N/D NTMFS4849NT1G NTMFS4849NT3G PDF

    simulation models

    Abstract: ITF86182SK8T MS-012AA TB370
    Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4797.2 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.0115Ω, VGS = −10V Packaging (ITF86 - rDS(ON) = 0.016Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)


    Original     		ITF86182SK8T ITF86 MS-012AA) 182SK simulation models ITF86182SK8T MS-012AA TB370 PDF

    4851N

    Abstract: 488AA
    Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4851N AND8195/D NTMFS4851N/D 4851N 488AA PDF

    4846N

    Abstract: No abstract text available
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4846N AND8195/D NTMFS4846N/D 4846N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4849N AND8195/D NTMFS4849N/D PDF

    ITF86172SK8T

    Abstract: MS-012AA TB370
    Text: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4809.1 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.016Ω, VGS = −10V Packaging (HUF7 - rDS(ON) = 0.023Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)


    Original     		ITF86172SK8T MS-012AA) 6400S ITF86172SK8T MS-012AA TB370 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4849N AND8195/D NTMFS4849N/D PDF

    4851N

    Abstract: NTMFS4851NT1G NTMFS4851NT3G
    Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4851N AND8195/D NTMFS4851N/D 4851N NTMFS4851NT1G NTMFS4851NT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4851N AND8195/D NTMFS4851N/D PDF

    4846N

    Abstract: No abstract text available
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4846N AND8195/D NTMFS4846N/D 4846N PDF