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    POWER MOSFETS PROGRESS IN POWER SWITCHING Search Results

    POWER MOSFETS PROGRESS IN POWER SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFETS PROGRESS IN POWER SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STF12PF06

    Abstract: STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STW10NK80Z STS8C5H30L stw9nk70z
    Text: Power MOSFETs progress in power switching Selection guide May 2005 www.st.com/pmos MDmesh product range VDSS [V] RDS on (max) @ 10V [Ω] STE70NM50 500 0.05 190 190 70 ISOTOP 532 9.9 37 15 STY60NM50 500 0.05 190 190 60 Max247 532 9.9 37 15 STW45NM50FD 500


    Original     		PDF STE70NM50 STY60NM50 Max247 STW45NM50FD O-247 STE48NM50 STW45NM50 STW26NM50 STF12PF06 STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STW10NK80Z STS8C5H30L stw9nk70z

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:[email protected] Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    stu9nc80zi

    Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
    Text: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L


    Original     		PDF STT2PF60L STT3PF30L STT3PF20L STT4NF30L STT1NF100 STT5PF20V STT3PF20V STT5NF20V PowerSO-10, ISOWATT218, stu9nc80zi STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z

    car airbag

    Abstract: mosfet firing circuit 62726 Si4410 gate firing of d.c drive depletion 60V power mosfet MOS Controlled Thyristor trench power mosfet bv27 mosfet triggering circuit
    Text: Complementary Trench Power MOSFETs Define New Levels of Performance Richard K. Williams, King Owyang, Hamza Yilmaz, Mike Chang, and Wayne Grabowski Introduction The vertical power MOSFET has become the preeminent switching device in modern power semiconductors, in part due to its capacity for low


    Original     		PDF

    chARGE PUMP igbt drive

    Abstract: No abstract text available
    Text: application INFO available UC1705 UC2705 UC3705 High Speed Power Driver FEATURES DESCRIPTION • 1.5A Source/Sink Drive • 100 nsec Delay • 40 nsec Rise and Fall into 1000pF • Inverting and Non-Inverting Inputs The UC1705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching


    Original     		PDF UC1705 UC2705 UC3705 1000pF chARGE PUMP igbt drive

    cr0603 VENKEL

    Abstract: C0603X5R6R3
    Text: AN726 U TILITY C LASS - D TOOL S T I C K U SER ’ S G UIDE 1. Introduction Class-D is a switching power amplifier architecture that uses high-frequency Pulse-Width Modulation PWM to generate the output waveform. The transistors are fully on or fully off, which means this architecture can reach very


    Original     		PDF AN726 cr0603 VENKEL C0603X5R6R3

    WO02

    Abstract: DC TO AC CONVERTER Trench MOS Schottky Rectifier dc to ac converter schematic pwm schematic buck converter schematic diagram AC to DC converter high output Si9174 2002 DIG. TRANS Cross References Data power mosfet trench power wfet
    Text: Copyright 2004 IEEE. Reprinted from the proceedings of Bipolar / BiCMOS Circuits and Technology Meeting, September 28-30, 2003, Toulouse, France. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of


    Original     		PDF Next-Generatio018 Si9174 WO02 DC TO AC CONVERTER Trench MOS Schottky Rectifier dc to ac converter schematic pwm schematic buck converter schematic diagram AC to DC converter high output Si9174 2002 DIG. TRANS Cross References Data power mosfet trench power wfet

    MOS Controlled Thyristor

    Abstract: thyristor lifetime
    Text: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT


    Original     		PDF

    STripFET

    Abstract: STD85N3LH5 STS14N3LLH5 44 LS 95 NC 1350 ls 7400 7400 ls STU60N3LH5 STD60N3LH5 STD50N03L
    Text: Power MOSFETs STripFETTM V STripFET V: main features Metal layer RMET reduction Sketch of STripFET V Structure METAL TEOS POLY SOURCE BODY Drain engineering REPI reduction Enhan. DE Double gate oxide thickness Qg reduction DE Vertical contact µ-Trench Rch reduction


    Original     		PDF STD85N3LH5 STU70N2LH5* STU95N2LH5* STU60N3LH5 STU85N3LH5 STL65N3LLH5 STL150N3LLH5 STK25N3LLH5^ STK38N3LLH5^ STripFET STD85N3LH5 STS14N3LLH5 44 LS 95 NC 1350 ls 7400 7400 ls STU60N3LH5 STD60N3LH5 STD50N03L

    fairchild Igbts

    Abstract: All Sensors 6838 new discrete IGBT development for consumer use "Analog Multipliers" Shenzhen SI Semiconductors SE-171 LVDS memory fairchild korea optocouplers fairchild optocouplers
    Text: Overview.Layout11 5/20/04 3:06 PM Page 3 Analog Discrete Interface & Logic Optoelectronics Fairchild Semiconductor The Power Franchise Product Portfolio Across the board. Around the world. TM Power Optimization > Conversion > Distribution > Management > Minimization


    Original     		PDF Layout11 Power247TM, fairchild Igbts All Sensors 6838 new discrete IGBT development for consumer use "Analog Multipliers" Shenzhen SI Semiconductors SE-171 LVDS memory fairchild korea optocouplers fairchild optocouplers

    Untitled

    Abstract: No abstract text available
    Text: MIC2871 1.2A High-Brightness LED Flash Driver with Single-Wire Serial Interface General Description Features The MIC2871 is a high-current, high-efficiency flash LED driver. The LED driver current is generated by an integrated inductive boost converter with a 2MHz switching


    Original     		PDF MIC2871 MIC2871

    marking ic 8pin C66

    Abstract: No abstract text available
    Text: TPS28225 TPS28226 Product Preview www.ti.com SLUS710A – MAY 2006 – REVISED JANUARY 2007 High-Frequency 4-A Sink Synchronous MOSFET Drivers FEATURES • • • • • • • • • • • • • • • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time


    Original     		PDF TPS28225 TPS28226 SLUS710A 14-ns 10-ns 30-ns TPS54310 TPS62110 UCC28019 marking ic 8pin C66

    dc shunt motor

    Abstract: abb press-pack igbt SEMIPACK1 package schematic thyristor based inverter pcb board of miniskiip 2 tanaka AL wire Semikron Semitop 3 footprint press-pack igbt miniskiip8 semikron automotive inverter
    Text: Present and Future of Power Electronics Modules T. Stockmeier, W.Tursky SEMIKRON Elektronik GmbH Sigmundstrasse 200 90431 Nuremberg, GERMANY Abstract— Power Electronic Modules are ranging from single switches to fully integrated power electronic systems. Packages


    Original     		PDF kV-1200A dc shunt motor abb press-pack igbt SEMIPACK1 package schematic thyristor based inverter pcb board of miniskiip 2 tanaka AL wire Semikron Semitop 3 footprint press-pack igbt miniskiip8 semikron automotive inverter

    zero crossing detector in rectifier circuit

    Abstract: AN652 MOSFET and parallel Schottky diode synchronous rectifier mosfet 74HC04 APP652 calculating rectifier circuits switching-regulator ic Reduced conduction losses rectifier zero crossing detector mosfet
    Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: Synchronous Rectification Aids Low-Voltage Power Supplies Jan 31, 2001 APPLICATION NOTE 652 Synchronous Rectification Aids Low-Voltage Power Supplies Synchronous rectifiers can improve switching-power-supply efficiency, particularly in low-voltage low-power


    Original     		PDF 12-hour com/an652 AN652, APP652, Appnote652, zero crossing detector in rectifier circuit AN652 MOSFET and parallel Schottky diode synchronous rectifier mosfet 74HC04 APP652 calculating rectifier circuits switching-regulator ic Reduced conduction losses rectifier zero crossing detector mosfet

    SN75447

    Abstract: TLC555
    Text: SN75372 DUAL MOSFET DRIVER SLLS025A – JULY 1986 • • • Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds Output Supply Voltage Range up to 24 V Low Standby Power Dissipation D OR P PACKAGE TOP VIEW 1A E 2A GND description The SN75372 is a dual NAND gate interface


    Original     		PDF SN75372 SLLS025A slyt017c SN75447 TLC555

    SiC-JFET

    Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
    Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise


    Original     		PDF

    main disadvantages of mosfet

    Abstract: Semiconductor Group igbt
    Text: The New Generation of MOS-Controlled Power Semiconductor Components Advantages in Application Power semiconductor components are the driving force behind the continued development of power electronics system design, particularly in the areas of energy efficiency, increased


    Original     		PDF

    20HTSSOP

    Abstract: TPS2211AIDBRG4
    Text: TPS2211A SINGLEĆSLOT PC CARD POWER INTERFACE SWITCH FOR PARALLEL PCMCIA CONTROLLERS SLVS282B − SEPTEMBER 2000 − REVISED JULY 2005 D Fully Integrated VCC and Vpp Switching for DB PACKAGE† TOP VIEW Single-Slot PC Card Interface D Low rDS(on) (70-mΩ 5-V VCC Switch and


    Original     		PDF TPS2211A SLVS282B 16-Pin 20-Pin 20HTSSOP TPS2211AIDBRG4

    SLUA054

    Abstract: UC3708NE
    Text: application INFO available UC1708 UC2708 UC3708 Dual Non-Inverting Power Driver FEATURES • 3.0A Peak Current Totem Pole Output • 5 to 35V Operation • 25ns Rise and Fall Times • 25ns Propagation Delays • Thermal Shutdown and UnderVoltage Protection


    Original     		PDF UC1708 UC2708 UC3708 SLUA054 UC3708NE

    Untitled

    Abstract: No abstract text available
    Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW


    Original     		PDF TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 SLVS132F 25-ns 40-ns

    8pin Dual High-Speed Power MOSFET Drivers

    Abstract: No abstract text available
    Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW


    Original     		PDF TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 SLVS132F 25-ns 40-ns 8pin Dual High-Speed Power MOSFET Drivers

    eeprom programmer schematic 24c02

    Abstract: irf3703 256X8 SMT4004 T4004 st microelectronics cb4 face tracker circuit schematic SMX3200
    Text: SMT4004 QUAD TRACKING POWER SUPPLY MANAGER FEATURES & APPLICATIONS INTRODUCTION • Programmable Softstart, Tracking and Voltage Monitoring Functions • Controls 4 Independent Supplies Down to 0.9V • Programmable Bus-Side and Card-Side UV and OV Thresholds


    Original     		PDF SMT4004 256X8 SMT4004 eeprom programmer schematic 24c02 irf3703 T4004 st microelectronics cb4 face tracker circuit schematic SMX3200

    Untitled

    Abstract: No abstract text available
    Text: UC1709, UC2709, UC3709 DUAL HIGH- SPEED FET DRIVER SLUS196B - NOVEMBER 1996 - REVISED MARCH 2004 D D D D D D 1.5 Amp Source/Sink Drive simplified schematic only one driver shown Pin Compatible with 0026 Products 40 ns Rise and Fall into 1000pF Low Quiescent Current


    Original     		PDF UC1709, UC2709, UC3709 SLUS196B 1000pF MMH0026