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    POWER SEMICONDUCTOR 1973 Search Results

    POWER SEMICONDUCTOR 1973 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER SEMICONDUCTOR 1973 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF873

    Abstract: motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1526/D AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances:


    Original     		PDF AN1526/D AN1526 MRF873 motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers

    MRF873

    Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
    Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and


    Original     		PDF AN1526/D AN1526 AN1526/D* MRF873 j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors

    EB-27 motorola

    Abstract: hf power combiner broadband transformers Indiana general ferrite core stackpole 57-1845-24b FERRITE TOROID Indiana General F684-1 57-1845-24b Design of H. F. Wideband Power Transformers BROADBAND TRANSFORMERS AND POWER ecom-2989 power combiner broadband transformers
    Text: Order this document by AN749/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN749 BROADBAND TRANSFORMERS AND POWER COMBINING TECHNIQUES FOR RF Prepared by: H. Granberg RF Circuits Engineering INTRODUCTION The following discussion focuses on broadband transformers for RF power applications with practical examples


    Original     		PDF AN749/D AN749 EB-27 motorola hf power combiner broadband transformers Indiana general ferrite core stackpole 57-1845-24b FERRITE TOROID Indiana General F684-1 57-1845-24b Design of H. F. Wideband Power Transformers BROADBAND TRANSFORMERS AND POWER ecom-2989 power combiner broadband transformers

    laptops ics and their various functions

    Abstract: FeRAM ROHM ushio Rohm LED Lighting RPI-1040 BH1720FVC BA6287F circuit diagram of luminous inverter halogen bulb circuit diagram SH3002-DC80A
    Text: 4 http://www.rohm.com/ei/ Vol. 2009.01 Cover Story 1 Nonvolatile Logic Technology Retain data without a power supply Cover Story 2 Breaking away from silicon Full SiC power modules Cover Story 3 Applying semiconductor technology to the lighting field LED lighting modules


    Original     		PDF BD6210HFP BD6210F BD6211HFP BD6211F BD6212HFP BD6212FP BD6220HFP BD6220F BD6221HFP BD6221F laptops ics and their various functions FeRAM ROHM ushio Rohm LED Lighting RPI-1040 BH1720FVC BA6287F circuit diagram of luminous inverter halogen bulb circuit diagram SH3002-DC80A

    vertical JFET

    Abstract: diode c23 jfet cascode AN8610 spice models P-Channel Depletion Mosfets IRF130 datasheet list of P channel power mosfet DEPLETION MOSFET Harris Semiconductor jfet
    Text: Harris Semiconductor No. AN8610.1 Harris Power MOSFETs February 1994 SPICING-UP SPICE II SOFTWARE FOR POWER MOSFET MODELING Author: C.F. Wheatley, Jr., H.R. Ronan, Jr., G.M. Dolny The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated


    Original     		PDF AN8610 vertical JFET diode c23 jfet cascode spice models P-Channel Depletion Mosfets IRF130 datasheet list of P channel power mosfet DEPLETION MOSFET Harris Semiconductor jfet

    Westinghouse SCR handbook

    Abstract: General electric SCR SCR Applications Handbook General electric SCR manual "General Electric SCR Manual" 6th SCR Handbook, rca INTERNATIONAL RECTIFIER scr WESTINGHOUSE scr rca thyristor manual voltrap
    Text: Introduction to Solid State Power Electronics Editor: John William Motto, Jr. Semiconductor Division Youngwood, Pennsylvania 15697 Acknowledgement February 1977 The material for this updated text was originally written by Dr. William E. Newell, a noted authority


    Original     		PDF

    mc6805p

    Abstract: MCL ML-1 M6805 05E2 MC146805E2 MC68 A8AI power semiconductor 1973 mc6805p2
    Text: Freescale Semiconductor, Inc. *’ MC146805E2 o [ Advance Information CMOS I HIGH PERFORMANCE 8-BIT MICROPROCESSOR The MCl@05E2 Microprocessor Unit Family of Microcomputers. This 8-bit microprocessor contains a CPU, on-chip low-power, low-cost processor designed


    Original     		PDF MC146805E2 M6805 MC146805E2 A13322-3 RD1-850-R2 mc6805p MCL ML-1 M6805 05E2 MC68 A8AI power semiconductor 1973 mc6805p2

    SSD1322

    Abstract: SSD1352 ssd1322ur1 480x64 480x128 seg420 led seg420 OLED driver IC sj 2025 datasheets 3874
    Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1322 Product Preview 480 x 128, Dot Matrix High Power OLED/PLED Segment/Common Driver with Controller This document contains information on a product under development. Solomon Systech reserves the right to change


    Original     		PDF SSD1322 2002/95/EC) SJ/T11364-2006) SSD1322 SSD1352 ssd1322ur1 480x64 480x128 seg420 led seg420 OLED driver IC sj 2025 datasheets 3874

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. *’ MC146805E2 o [ Advance Information CMOS I HIGH PERFORMANCE 8-BIT MICROPROCESSOR The MCl@05E2 Microprocessor Unit Family of Microcomputers. This 8-bit microprocessor contains a CPU, on-chip low-power, low-cost processor designed


    Original     		PDF MC146805E2 M6805 MC146805E2 A13322-3 RD1-850-R2

    SSD1322

    Abstract: SSD1322u SSD1322UR1
    Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1322 Advance Information 480 x 128, Dot Matrix High Power OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without


    Original     		PDF SSD1322 SSD1322 2002/95/EC SSD1322u SSD1322UR1

    MRF1004MA

    Abstract: TACAN TACAN 41 J295
    Text: MOTOROLA Order this document by MRF1004MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1004MA Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    Original     		PDF MRF1004MA/D MRF1004MA MRF1004MA/D* MRF1004MA TACAN TACAN 41 J295

    MRF1090MA

    Abstract: microwave transistor
    Text: MOTOROLA Order this document by MRF1090MA/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF1090MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc


    Original     		PDF MRF1090MA/D MRF1090MA MRF1090MA microwave transistor

    j325

    Abstract: erie redcap capacitors MRF1002MA MRF1002MB
    Text: MOTOROLA Order this document by MRF1002MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1002MA MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    Original     		PDF MRF1002MA/D MRF1002MA MRF1002MB MRF1002MA MRF1002MA/D* j325 erie redcap capacitors MRF1002MB

    J15-12

    Abstract: MRF1015MA MRF1015MB
    Text: MOTOROLA Order this document by MRF1015MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1015MA MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    Original     		PDF MRF1015MA/D MRF1015MA MRF1015MB MRF1015MA MRF1015MA/D* J15-12 MRF1015MB

    ta1938

    Abstract: 1N5835 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
    Text: MIL-S-19500/^ 9 March 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5835 and 1N5836 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment


    OCR Scan     		PDF MIL-S-19500/UQU 1N5835 1N5836 MIL-S-19500, MIL-S-19500. MIL-S-19500 5961-A497 ta1938 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011

    motorola diode mr862

    Abstract: single phase variac 20 v MR860 1N4723 MR861 MR862 MR864 MR866
    Text: MOTOROLA SC -CDIODES/OPTOÏ Tb MOTOROLA • SEMICONDUCTOR ■ B B M TECHNICAL DATA B - r - 0 3 -/9 MR860 MR861 MR862 MR864 ■ MR866 j FAST RECOVERY POWER RECTIFIERS STUD MOUNTED FAST RECOVERY POWER RECTIFIERS 50-600 VOLTS 40 AMPERES . . . designed for special applications such as dc power supplies, inverters,


    OCR Scan     		PDF

    T41G

    Abstract: No abstract text available
    Text: CY7C197 SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed - 25 ns T h e C Y 7C197 is a high-perform ance C M O S static R A M organized as 262,144


    OCR Scan     		PDF CY7C197 7C197 0078-E T41G

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


    OCR Scan     		PDF

    2N650A

    Abstract: 2N651A 2N652A
    Text: MIL-S-19500/175C AMENDMENT 1 9 March 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N650A, 2N651A, AND 2N652A This amendment form s a p a rt of M ilitary Specification MIL-S-19500/175C, dated 10 October 1968, and is approved for use by all Departments and


    OCR Scan     		PDF MIL-S-19500/175C 2N650A, 2N651A, 2N652A MIL-S-19500/175C, 5961-0419OR 2N650A 2N651A 2N652A

    on 5295 transistor

    Abstract: on 5295 equivalents JANTX2N28 2N2812 2N2814 JAN2N2812 JAN2N2814 transistors substitute JANTX2N2814
    Text: MIL SPECS ï c | 0000125 OOOBSOb T | ~ MIL-S-195Ü0/415 USAF NOTICE 1 9 September 1986 NOTICE I [OF VALIDATION! MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812, AND 2N2814 JAN, AND JANTX MIL-S-19500/415(USAF) Amendment 2, dated 18 April 1973, has been reviewed and


    OCR Scan     		PDF MIL-S-19500/415 2N2812, 2N2814 MIL-S-19500, MIL-S-19500 5961-F208) on 5295 transistor on 5295 equivalents JANTX2N28 2N2812 JAN2N2812 JAN2N2814 transistors substitute JANTX2N2814

    1N3190

    Abstract: 1N3189 1N3191 1N3189 JAN IN3191 MARKING 34 MIL-S-19500 1N3189 44S3 diode VSF 200
    Text: u n -c.i0tnn/tctcikuvv\ i-i* â - - * j - a j j u u / i ^ 2 July 197 m_ SUPERSEDING M I L - S - 1 9 5 0 0 / 1 5 5 D NAVY 23 November 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES


    OCR Scan     		PDF MIL-S-19500/155E MIL-S-19500/155D 1N3189, 1N3190, 1N3191, MIL-S-19500, MIL-S-19500. MIL-S-19500 59M-N591) 1N3190 1N3189 1N3191 1N3189 JAN IN3191 MARKING 34 MIL-S-19500 1N3189 44S3 diode VSF 200

    MTH5N100

    Abstract: 5n95 5N100 AN569 MTH5N95 MTM5N100 MTM5N95 0610L mps 2108
    Text: Order this data sheet by MTH5N95/D MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M TH5N95 M TH 5N 100 M TM 5N 95 M TM 5N 100 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S TMOS POWER FETs 5 AMPERES rDS on = 3 OHMS


    OCR Scan     		PDF MTH5N95/D MTH5N95 MTH5N100 MTM5N95 MTM5N100 MTH5N95/D 5n95 5N100 AN569 MTM5N100 0610L mps 2108

    33204

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1002MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1002MA MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    OCR Scan     		PDF MRF1002MA/D MRF1002MA MRF1002MB MRF1002MA 32A-03 MRF1002MB 33204

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1015MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1015MA MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    OCR Scan     		PDF MRF1015MA/D MRF1015MA MRF1015MB