1800 ldmos
Abstract: SOT539A
Text: BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-230PRN
BLF6G20-230PRN
1800 ldmos
SOT539A
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ordering American Technical Ceramics
Abstract: No abstract text available
Text: BLF6G20-180PN Power LDMOS transistor Rev. 02 — 21 January 2009 Preliminary data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-180PN
BLF6G20-180PN
ordering American Technical Ceramics
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ordering American Technical Ceramics
Abstract: TRANSISTOR BV 32
Text: BLF6G20-180PN Power LDMOS transistor Rev. 01 — 28 April 2008 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-180PN
BLF6G20-180PN
ordering American Technical Ceramics
TRANSISTOR BV 32
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transistor C3
Abstract: BLF6G20-45
Text: BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 02 — 25 August 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-45;
BLF6G20S-45
BLF6G20-45
BLF6G20S-45
transistor C3
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BLF6G20(S)-45
Abstract: No abstract text available
Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-230PRN;
BLF6G20S-230PRN
BLF6G20-230PRN
20S-230PRN
BLF6G20(S)-45
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BLF6G20-180P
Abstract: No abstract text available
Text: BLF6G20-180P UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance
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BLF6G20-180P
BLF6G20-180P
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Untitled
Abstract: No abstract text available
Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-230PRN;
BLF6G20S-230PRN
BLF6G20-230PRN
20S-230PRN
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capacitor philips
Abstract: transistor C3
Text: BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-45;
BLF6G20S-45
BLF6G20-45
capacitor philips
transistor C3
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transistor C3
Abstract: EC 401 TRANSISTOR
Text: BLF6G20-40 Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G20-40
BLF6G20-40
transistor C3
EC 401 TRANSISTOR
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1800 ldmos
Abstract: No abstract text available
Text: BLF6G20-180PN Power LDMOS transistor Rev. 03 — 30 March 2009 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G20-180PN
BLF6G20-180PN
1800 ldmos
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Untitled
Abstract: No abstract text available
Text: MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and
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MJW18020
MJW18020
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1000 watts ups circuit diagram
Abstract: MJW18020 TO247 CASE
Text: MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and
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MJW18020
MJW18020
r14525
MJW18020/D
1000 watts ups circuit diagram
TO247 CASE
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1000 watts ups circuit diagram
Abstract: TO247 CASE
Text: MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and
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MJW18020
MJW18020
r14525
MJW18020/D
1000 watts ups circuit diagram
TO247 CASE
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
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VRF154FL
Abstract: MRF154 1N5362 2204B VRF154 trifilar ATC 700E MP170
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
MRF154
1N5362
2204B
VRF154
trifilar
ATC 700E
MP170
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arco mica trimmer
Abstract: 1N4148 1N5362 2204B MRF154 VRF154FL
Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
arco mica trimmer
1N4148
1N5362
2204B
MRF154
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Untitled
Abstract: No abstract text available
Text: VRF157FL VRF157FLMP 50V, 600W, 80MHz D RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF157FL
VRF157FLMP
80MHz
VRF157FL
30MHz,
MRF157
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IN5357
Abstract: VRF157FL MRF157 1kw mosfet 2204B mp Ceramic Disc Capacitors T46 634 arco TRIMMER capacitor 262 thermistor M35
Text: VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF157FL
VRF157FLMP
80MHz
VRF157FL
30MHz,
MRF157
IN5357
MRF157
1kw mosfet
2204B
mp Ceramic Disc Capacitors
T46 634
arco TRIMMER capacitor 262
thermistor M35
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ATC-700B
Abstract: 117nH
Text: VRF157FL G VRF157FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF157FL
VRF157FLMP
80MHz
30MHz,
MRF157
ATC-700B
117nH
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VRF154
Abstract: arco mica trimmer wound trifilar 10 turns
Text: VRF154FL G VRF154FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
100MHz
30MHz,
MRF154
VRF154
arco mica trimmer
wound trifilar 10 turns
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1802fx
Abstract: st1802fx 29-INCH 1802f ST1802 ic 4440 circuit diagram china tv schematic diagram ISOWATT218FX JESD97
Text: ST1802FX HIGH VOLTAGE FAST - SWITCHING NPN POWER TRANSISTOR Features • NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED POWER PACKAGE U.L. COMPLIANT FOR EASY MOUNTING ■ HIGH VOLTAGE CAPABILITY (>1500V) ■ HIGH SWITCHING SPEED ■ TIGTHER hFE CONTROL
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ST1802FX
2002/93/EC
ISOWATT218FX
29-INCHES
ST1802FX
1802fx
29-INCH
1802f
ST1802
ic 4440 circuit diagram
china tv schematic diagram
ISOWATT218FX
JESD97
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ATC 100E
Abstract: 700B ARF1505 amplifier 9v a 500v power transistor 1802 2x4700pF AMPLIFIER 1500w
Text: S D ARF1505 S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1505
1525-xx
40MHz
ARF1505
ARF15-BeO
RF1505
047mF
ATC 100E
700B
amplifier 9v a 500v
power transistor 1802
2x4700pF
AMPLIFIER 1500w
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Untitled
Abstract: No abstract text available
Text: S D ARF1505 S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1505
1525-xx
40MHz
ARF1505
RF1505
047mF
75-380pF
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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