Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER TRANSISTOR 1802 Search Results

    POWER TRANSISTOR 1802 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    POWER TRANSISTOR 1802 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1800 ldmos

    Abstract: SOT539A
    Text: BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original
    BLF6G20-230PRN BLF6G20-230PRN 1800 ldmos SOT539A PDF

    ordering American Technical Ceramics

    Abstract: No abstract text available
    Text: BLF6G20-180PN Power LDMOS transistor Rev. 02 — 21 January 2009 Preliminary data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original
    BLF6G20-180PN BLF6G20-180PN ordering American Technical Ceramics PDF

    ordering American Technical Ceramics

    Abstract: TRANSISTOR BV 32
    Text: BLF6G20-180PN Power LDMOS transistor Rev. 01 — 28 April 2008 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original
    BLF6G20-180PN BLF6G20-180PN ordering American Technical Ceramics TRANSISTOR BV 32 PDF

    transistor C3

    Abstract: BLF6G20-45
    Text: BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 02 — 25 August 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original
    BLF6G20-45; BLF6G20S-45 BLF6G20-45 BLF6G20S-45 transistor C3 PDF

    BLF6G20(S)-45

    Abstract: No abstract text available
    Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original
    BLF6G20-230PRN; BLF6G20S-230PRN BLF6G20-230PRN 20S-230PRN BLF6G20(S)-45 PDF

    BLF6G20-180P

    Abstract: No abstract text available
    Text: BLF6G20-180P UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance


    Original
    BLF6G20-180P BLF6G20-180P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original
    BLF6G20-230PRN; BLF6G20S-230PRN BLF6G20-230PRN 20S-230PRN PDF

    capacitor philips

    Abstract: transistor C3
    Text: BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original
    BLF6G20-45; BLF6G20S-45 BLF6G20-45 capacitor philips transistor C3 PDF

    transistor C3

    Abstract: EC 401 TRANSISTOR
    Text: BLF6G20-40 Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original
    BLF6G20-40 BLF6G20-40 transistor C3 EC 401 TRANSISTOR PDF

    1800 ldmos

    Abstract: No abstract text available
    Text: BLF6G20-180PN Power LDMOS transistor Rev. 03 — 30 March 2009 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original
    BLF6G20-180PN BLF6G20-180PN 1800 ldmos PDF

    Untitled

    Abstract: No abstract text available
    Text: MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and


    Original
    MJW18020 MJW18020 PDF

    1000 watts ups circuit diagram

    Abstract: MJW18020 TO247 CASE
    Text: MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and


    Original
    MJW18020 MJW18020 r14525 MJW18020/D 1000 watts ups circuit diagram TO247 CASE PDF

    1000 watts ups circuit diagram

    Abstract: TO247 CASE
    Text: MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and


    Original
    MJW18020 MJW18020 r14525 MJW18020/D 1000 watts ups circuit diagram TO247 CASE PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original
    VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154 PDF

    VRF154FL

    Abstract: MRF154 1N5362 2204B VRF154 trifilar ATC 700E MP170
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original
    VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154 MRF154 1N5362 2204B VRF154 trifilar ATC 700E MP170 PDF

    arco mica trimmer

    Abstract: 1N4148 1N5362 2204B MRF154 VRF154FL
    Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original
    VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 arco mica trimmer 1N4148 1N5362 2204B MRF154 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF157FL VRF157FLMP 50V, 600W, 80MHz D RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original
    VRF157FL VRF157FLMP 80MHz VRF157FL 30MHz, MRF157 PDF

    IN5357

    Abstract: VRF157FL MRF157 1kw mosfet 2204B mp Ceramic Disc Capacitors T46 634 arco TRIMMER capacitor 262 thermistor M35
    Text: VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original
    VRF157FL VRF157FLMP 80MHz VRF157FL 30MHz, MRF157 IN5357 MRF157 1kw mosfet 2204B mp Ceramic Disc Capacitors T46 634 arco TRIMMER capacitor 262 thermistor M35 PDF

    ATC-700B

    Abstract: 117nH
    Text: VRF157FL G VRF157FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original
    VRF157FL VRF157FLMP 80MHz 30MHz, MRF157 ATC-700B 117nH PDF

    VRF154

    Abstract: arco mica trimmer wound trifilar 10 turns
    Text: VRF154FL G VRF154FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original
    VRF154FL VRF154FLMP 80MHz 100MHz 30MHz, MRF154 VRF154 arco mica trimmer wound trifilar 10 turns PDF

    1802fx

    Abstract: st1802fx 29-INCH 1802f ST1802 ic 4440 circuit diagram china tv schematic diagram ISOWATT218FX JESD97
    Text: ST1802FX HIGH VOLTAGE FAST - SWITCHING NPN POWER TRANSISTOR Features • NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED POWER PACKAGE U.L. COMPLIANT FOR EASY MOUNTING ■ HIGH VOLTAGE CAPABILITY (>1500V) ■ HIGH SWITCHING SPEED ■ TIGTHER hFE CONTROL


    Original
    ST1802FX 2002/93/EC ISOWATT218FX 29-INCHES ST1802FX 1802fx 29-INCH 1802f ST1802 ic 4440 circuit diagram china tv schematic diagram ISOWATT218FX JESD97 PDF

    ATC 100E

    Abstract: 700B ARF1505 amplifier 9v a 500v power transistor 1802 2x4700pF AMPLIFIER 1500w
    Text: S D ARF1505 S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.


    Original
    ARF1505 1525-xx 40MHz ARF1505 ARF15-BeO RF1505 047mF ATC 100E 700B amplifier 9v a 500v power transistor 1802 2x4700pF AMPLIFIER 1500w PDF

    Untitled

    Abstract: No abstract text available
    Text: S D ARF1505 S ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.


    Original
    ARF1505 1525-xx 40MHz ARF1505 RF1505 047mF 75-380pF PDF

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan
    BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A PDF