Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER TRANSISTOR 2N2222 Search Results

    POWER TRANSISTOR 2N2222 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR 2N2222 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2n2222a transistor

    Abstract: 2N2222ADCSM dual npn 500ma 2N2222A surface mount 2N2222A LE17 013 transistor
    Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device


    Original     		2N2222ADCSM 2N2222A 500mW MO-041BB) 2n2222a transistor 2N2222ADCSM dual npn 500ma 2N2222A surface mount LE17 013 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device


    Original     		2N2222ADCSM 2N2222A 500mW 86mW/Â MO-041BB) PDF

    2n2222a SOT23

    Abstract: 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1
    Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		2N2222ACSM 150mA 2n2222a SOT23 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1 PDF

    2N2222ACSM4

    Abstract: LCC3 weight 2n2222a
    Text: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    Original     		2N2222ACSM4 150mA 2N2222ACSM4 LCC3 weight 2n2222a PDF

    2n2222a SOT23

    Abstract: 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23
    Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		2N2222ACSM 150mA 2n2222a SOT23 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23 PDF

    LCC3 weight

    Abstract: 2N2222A LCC1 2N2222ACSM-JQR-B 2N2222ACSM 2N2222ACSM4 2N2222ACSM4R
    Text: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    Original     		2N2222ACSM4 2N2222ACSM" 2N2222ACSM 2N2222ACSM4 2N2222ACSM4-JQR-B 2N2222ACSM4R 2N2222ACSMCECC 2N2222ACSM-JQR-B 250MHz LCC3 weight 2N2222A LCC1 PDF

    2n2222a SOT23

    Abstract: 2N2222A LCC1 2N2222ACSM 2N2222A
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		2N2222ACSM 150mA 2n2222a SOT23 2N2222A LCC1 2N2222ACSM 2N2222A PDF

    2N2222ACSM

    Abstract: No abstract text available
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		2N2222ACSM 150mA 2N2222ACSM PDF

    MMFT6661T1

    Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


    Original     		Tap218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMFT6661T1 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.


    Original     		2N2222ACSM 150mA PDF

    FET 2N5458

    Abstract: BC547 fet BC237 TO261AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


    Original     		MMFT107218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 FET 2N5458 BC547 fet BC237 TO261AA PDF

    TSOP 48 thermal resistance

    Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


    Original     		MMFT96218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 TSOP 48 thermal resistance BC237 Transistor BC107b motorola transistor 2N3819 BCY72 PDF

    MJE13002

    Abstract: mje13002 to92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13002 MJE13002 MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-xat QW-R204-014 mje13002 to92 PDF

    mje13002 to92

    Abstract: MJE13002 equivalent mje13002 OF transistor 2N2222 to-92 MJE13002 transistor MJE13002G MJE-13002 2N2222 NPN Transistor to 92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13002 MJE13002 MJE13002L-x-T92-B MJE13002G-x-T92-B MJE13002L-x-T92-K QW-R204-014 mje13002 to92 MJE13002 equivalent OF transistor 2N2222 to-92 MJE13002 transistor MJE13002G MJE-13002 2N2222 NPN Transistor to 92 PDF

    semicoa 2N2222A

    Abstract: Transistor 2N2222AJX for JANTXV 2N2222A jan 2n2222AJ 2N2222A JANTXV
    Text: 2N2222A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AJ • JANTX level (2N2222AJX)


    Original     		2N2222A MIL-PRF-19500 2N2222AJ) 2N2222AJX) 2N2222AJV) 2N2222AJS) MIL-STD-750 MIL-PRF-19500/255 semicoa 2N2222A Transistor 2N2222AJX for JANTXV 2N2222A jan 2n2222AJ 2N2222A JANTXV PDF

    2N2222AJX

    Abstract: jan 2n2222AJ of 2N2222A 2N2222A JANTXV 2N2222A JANTX
    Text: 2N2222A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AJ • JANTX level (2N2222AJX)


    Original     		2N2222A MIL-PRF-19500 2N2222AJ) 2N2222AJX) 2N2222AJV) 2N2222AJS) 2N2222AJSR) MIL-STD-750 MIL-PRF-19500/255 2N2222AJX jan 2n2222AJ of 2N2222A 2N2222A JANTXV 2N2222A JANTX PDF

    2N2222AUB

    Abstract: 2N2222AUBJX 2n2222au 2N2222AUB JANTX 2N2222AUBJ 2N2222AUBJS 2N2222AUBJV
    Text: 2N2222AUB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AUBJ • JANTX level (2N2222AUBJX)


    Original     		2N2222AUB MIL-PRF-19500 2N2222AUBJ) 2N2222AUBJX) 2N2222AUBJV) 2N2222AUBJS) MIL-STD-750 MIL-PRF-19500/255 2N2222AUB 2N2222AUBJX 2n2222au 2N2222AUB JANTX 2N2222AUBJ 2N2222AUBJS 2N2222AUBJV PDF

    jan 2n2222AJ

    Abstract: 2N2222A JANTXV 2N2222A JANTX Transistor 2N2222A Transistor 2N2222AJX 2N2222A 2N2222AJ 2N2222AJS 2N2222AJV 2N2222AJX
    Text: 2N2222A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AJ • JANTX level (2N2222AJX)


    Original     		2N2222A MIL-PRF-19500 2N2222AJ) 2N2222AJX) 2N2222AJV) 2N2222AJS) MIL-STD-750 MIL-PRF-19500/255 jan 2n2222AJ 2N2222A JANTXV 2N2222A JANTX Transistor 2N2222A Transistor 2N2222AJX 2N2222A 2N2222AJ 2N2222AJS 2N2222AJV 2N2222AJX PDF

    2N2222AUBJSR

    Abstract: 2N2222AUB JANS JANSR 2N2222AUB 2N2222AUB JANTXV
    Text: 2N2222AUB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AUBJ • JANTX level (2N2222AUBJX)


    Original     		2N2222AUB MIL-PRF-19500 2N2222AUBJ) 2N2222AUBJX) 2N2222AUBJV) 2N2222AUBJS) 2N2222AUBJSR) MIL-STD-750 MIL-PRF-19500/255 979-lse 2N2222AUBJSR 2N2222AUB JANS JANSR 2N2222AUB 2N2222AUB JANTXV PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching


    Original     		MJE13002 O-126 QW-R204-014 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-at QW-R223-009 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K QW-R223-009 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13002-E MJE13002-E MJE13002L-E-x-T6S-K MJE13002G-E-x-T6S-K QW-R204-032 PDF

    2N2222ACSM4

    Abstract: No abstract text available
    Text: mi SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    OCR Scan     		2N2222ACSM4 2N2222A 100MHz 150mA 150mA 2N2222ACSM4 PDF