2n2222a transistor
Abstract: 2N2222ADCSM dual npn 500ma 2N2222A surface mount 2N2222A LE17 013 transistor
Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device
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2N2222ADCSM
2N2222A
500mW
MO-041BB)
2n2222a transistor
2N2222ADCSM
dual npn 500ma
2N2222A surface mount
LE17
013 transistor
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Untitled
Abstract: No abstract text available
Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device
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2N2222ADCSM
2N2222A
500mW
86mW/Â
MO-041BB)
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2n2222a SOT23
Abstract: 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1
Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2n2222a SOT23
2N2222A JAN
2N2222ACSM
2N2222A
SOT23 transistor 2N2222A
2N2222A LCC1
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2N2222ACSM4
Abstract: LCC3 weight 2n2222a
Text: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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2N2222ACSM4
150mA
2N2222ACSM4
LCC3 weight
2n2222a
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2n2222a SOT23
Abstract: 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23
Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2n2222a SOT23
2N2222A LCC1
Transistor 2N2222A
SOT23 transistor 2N2222A
2N2222A JAN
npn switching transistor 60v
2N2222A
2N2222ACSM
HIGH SPEED SWITCHING NPN SOT23
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LCC3 weight
Abstract: 2N2222A LCC1 2N2222ACSM-JQR-B 2N2222ACSM 2N2222ACSM4 2N2222ACSM4R
Text: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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2N2222ACSM4
2N2222ACSM"
2N2222ACSM
2N2222ACSM4
2N2222ACSM4-JQR-B
2N2222ACSM4R
2N2222ACSMCECC
2N2222ACSM-JQR-B
250MHz
LCC3 weight
2N2222A LCC1
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2N2222ACSM4
Abstract: No abstract text available
Text: mi SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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OCR Scan
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2N2222ACSM4
2N2222A
100MHz
150mA
150mA
2N2222ACSM4
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2n2222a SOT23
Abstract: 2N2222A LCC1 2N2222ACSM 2N2222A
Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2n2222a SOT23
2N2222A LCC1
2N2222ACSM
2N2222A
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2N2222ACSM
Abstract: No abstract text available
Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2N2222ACSM
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MMFT6661T1
Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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Tap218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MMFT6661T1
72v6
BC237
2N3819 fet
BC309B
DL 3 Y SOT-223
msc2295
ucl 82
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Untitled
Abstract: No abstract text available
Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
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FET 2N5458
Abstract: BC547 fet BC237 TO261AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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MMFT107218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
FET 2N5458
BC547 fet
BC237
TO261AA
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TSOP 48 thermal resistance
Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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MMFT96218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
TSOP 48 thermal resistance
BC237
Transistor BC107b motorola
transistor 2N3819
BCY72
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MJE13002
Abstract: mje13002 to92
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13002
MJE13002
MJE13002L-x-T92-B
MJE13002G-x-T92-B
MJE13002L-xat
QW-R204-014
mje13002 to92
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Untitled
Abstract: No abstract text available
Text: 2N2222A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AJ • JANTX level (2N2222AJX)
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2N2222A
MIL-PRF-19500
2N2222AJ)
2N2222AJX)
2N2222AJV)
2N2222AJS)
2N2222AJSR)
MIL-STD-750
MIL-PRF-19500/255
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semicoa 2N2222A
Abstract: Transistor 2N2222AJX for JANTXV 2N2222A jan 2n2222AJ 2N2222A JANTXV
Text: 2N2222A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AJ • JANTX level (2N2222AJX)
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2N2222A
MIL-PRF-19500
2N2222AJ)
2N2222AJX)
2N2222AJV)
2N2222AJS)
MIL-STD-750
MIL-PRF-19500/255
semicoa 2N2222A
Transistor 2N2222AJX
for JANTXV 2N2222A
jan 2n2222AJ
2N2222A JANTXV
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2N2222AJX
Abstract: jan 2n2222AJ of 2N2222A 2N2222A JANTXV 2N2222A JANTX
Text: 2N2222A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AJ • JANTX level (2N2222AJX)
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2N2222A
MIL-PRF-19500
2N2222AJ)
2N2222AJX)
2N2222AJV)
2N2222AJS)
2N2222AJSR)
MIL-STD-750
MIL-PRF-19500/255
2N2222AJX
jan 2n2222AJ
of 2N2222A
2N2222A JANTXV
2N2222A JANTX
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2N2222AUB
Abstract: 2N2222AUBJX 2n2222au 2N2222AUB JANTX 2N2222AUBJ 2N2222AUBJS 2N2222AUBJV
Text: 2N2222AUB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AUBJ • JANTX level (2N2222AUBJX)
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2N2222AUB
MIL-PRF-19500
2N2222AUBJ)
2N2222AUBJX)
2N2222AUBJV)
2N2222AUBJS)
MIL-STD-750
MIL-PRF-19500/255
2N2222AUB
2N2222AUBJX
2n2222au
2N2222AUB JANTX
2N2222AUBJ
2N2222AUBJS
2N2222AUBJV
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jan 2n2222AJ
Abstract: 2N2222A JANTXV 2N2222A JANTX Transistor 2N2222A Transistor 2N2222AJX 2N2222A 2N2222AJ 2N2222AJS 2N2222AJV 2N2222AJX
Text: 2N2222A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AJ • JANTX level (2N2222AJX)
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2N2222A
MIL-PRF-19500
2N2222AJ)
2N2222AJX)
2N2222AJV)
2N2222AJS)
MIL-STD-750
MIL-PRF-19500/255
jan 2n2222AJ
2N2222A JANTXV
2N2222A JANTX
Transistor 2N2222A
Transistor 2N2222AJX
2N2222A
2N2222AJ
2N2222AJS
2N2222AJV
2N2222AJX
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2N2222AUBJSR
Abstract: 2N2222AUB JANS JANSR 2N2222AUB 2N2222AUB JANTXV
Text: 2N2222AUB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2222AUBJ • JANTX level (2N2222AUBJX)
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2N2222AUB
MIL-PRF-19500
2N2222AUBJ)
2N2222AUBJX)
2N2222AUBJV)
2N2222AUBJS)
2N2222AUBJSR)
MIL-STD-750
MIL-PRF-19500/255
979-lse
2N2222AUBJSR
2N2222AUB JANS
JANSR 2N2222AUB
2N2222AUB JANTXV
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Untitled
Abstract: No abstract text available
Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching
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MJE13002
O-126
QW-R204-014
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-at
QW-R223-009
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-K
QW-R223-009
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13002-E
MJE13002-E
MJE13002L-E-x-T6S-K
MJE13002G-E-x-T6S-K
QW-R204-032
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