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    POWER TRANSISTOR 3055 Search Results

    POWER TRANSISTOR 3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR 3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor Amp 3055L

    Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
    Text: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET


    Original     		PDF MMFT3055EL/D MMFT3055EL MMFT3055EL/D* transistor Amp 3055L 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569

    mosfet L 3055 motorola

    Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
    Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET


    Original     		PDF MMFT3055E/D MMFT3055E MMFT3055E/D* mosfet L 3055 motorola L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3

    CHM3055LXGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM3055LXGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE


    Original     		PDF CHM3055LXGP SC-62/SOT-89 250uA CHM3055LXGP

    2N7373

    Abstract: 2N7373 transistor 2N5004
    Text: INCH-POUND The documentation process conversion measures necessary to comply with this revision shall be completed by 28 March 1998 MIL-PRF-19500/613A 28 December 1997 SUPERSEDING MIL-S-19500/613 30 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/613A MIL-S-19500/613 2N7373, MIL-PRF-19500. O-254AA) 2N7373 2N7373 transistor 2N5004

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    transistor 3055

    Abstract: 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055
    Text: 2 N 3055 NPN Transistor for high-power A F output stages 2 N 3 0 5 5 is a single-diffused N P N silicon transistor in a case 3 A 2 D IN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistor is particularly designed for use iri high -pow er A F output stages and in stabilized pow er supplies.


    OCR Scan     		PDF 62702-U Q62901-B 45toi< 200mA 100mA -10mA transistor 3055 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055

    3055

    Abstract: 3055 npn A 3055 transistor 3055
    Text: 4 S i» 2 N 3055 'V Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendungen: Schalter hoher Leistung und NF-Endstufen Applications: High power switching and AF-output stages Besondere M erkm ale: Features:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 0030550 T5T H A P X N AUER PHILIPS/DISCRETE Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF bbS3T31 -SOT186 BUK445-60A/B BUK445

    Untitled

    Abstract: No abstract text available
    Text: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching


    OCR Scan     		PDF TIP2955 TIP3055 TIP3055 O-218 TIP2955. P2955/TIP3055 O-218 OT-93)

    mj2955

    Abstract: No abstract text available
    Text: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series


    OCR Scan     		PDF 2N3055 MJ2955 2N3055 MJ2955. SC08820 SC08830 P003F mj2955

    MC7812Ck

    Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
    Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range


    OCR Scan     		PDF PMD10K 16amps, PMD-13 PMD-11 PMD-17 MC7812Ck MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC

    rca 2n3055

    Abstract: SN3055 2n3055 2N3055 series voltage regulator 2n3055 voltage regulator RCA-2N3055 2N3055 RCA 2n3055 collector characteristic curve power transistor 2n3055 RCA 2N3055 transistor
    Text: Ïïî 38750.81 G E SOLID STATE DË“| 3 f l 7 S a â l 0 1E OQiTJòd 17352 D 5 | \~ T ~ 3 3 - / 3 General-Purpose Power * 2N3055 File Number 1699 General-Purpose Power Transistor


    OCR Scan     		PDF 3fl750Ã 2N3055 RCA-2N3055 2N3055. 2N3055 SN3055. rca 2n3055 SN3055 2N3055 series voltage regulator 2n3055 voltage regulator 2N3055 RCA 2n3055 collector characteristic curve power transistor 2n3055 RCA 2N3055 transistor

    MOTOROLA 3055V

    Abstract: 3055VL 3055V
    Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTD3055VL/D MOTOROLA 3055V 3055VL 3055V

    2SC3055

    Abstract: E3 37497 2sc3055 transistor high power switching transistor
    Text: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*


    OCR Scan     		PDF 2SC3055 2SC3055 laC3055 374CJ7LB T-33-07 E3 37497 2sc3055 transistor high power switching transistor

    marking 3055l

    Abstract: MMFT3055ELT1 amp 3055l 3055L
    Text: Order this data sheet by MMFT3055ELT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ELT1 Motorola Preferred Device This advanced E-FET is a TMOS power MOSFET designed to


    OCR Scan     		PDF MMFT3055ELT1/D OT-223 MMFT3055ELT1 318E-01 318E-04. 318E-04 O-261AA OT-223 marking 3055l MMFT3055ELT1 amp 3055l 3055L

    mosfet L 3055 motorola

    Abstract: FT3055E sot-223 body marking D K Q F
    Text: O rder this data sheet by M M FT3055ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed


    OCR Scan     		PDF FT3055ET1/D OT-223 2PHX31317F-0 MMFT3055ET1/D mosfet L 3055 motorola FT3055E sot-223 body marking D K Q F

    40872

    Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
    Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40872 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111

    transistor 40410

    Abstract: 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636 TA8201
    Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) transistor 40410 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636

    3055e mos

    Abstract: TK3055E STK3055E 3055E stk3055 3055EN TK3055
    Text: SGS-THOMSON ir a u » K S S TK 3055E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss R D S o n Id S TK3055E 60 V 0 .1 5 £1 13 A , „ „ , , , AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE


    OCR Scan     		PDF 3055E TK3055E OT-82 OT-194 STK3055E. STK3055E 3055e mos STK3055E stk3055 3055EN TK3055

    DA 2688

    Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
    Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055


    OCR Scan     		PDF TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount M o t o r o la P re fe rre d D e v ic e TMOS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF 0E-05 0E-04 0E-01

    C2688

    Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
    Text: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature


    OCR Scan     		PDF TIP2955 TIP3055 t0-218aa 22eoi2 D0370D3 TIP2955 C2688 c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688

    3055E

    Abstract: D3055 atech
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is


    OCR Scan     		PDF 3055E Y145M. D3055 atech

    2n3055 collector characteristic curve

    Abstract: 2N3055 curve
    Text: T-33- 13 Power Transistors 2N3055 File Number HARRIS SEMICOND SECTOR 27E D • M302271 Q D l ^ b 1699 5 ■ HAS G eneral-Purpose Power Transistor Broadly A pplicable Devices for Industrial and Commercial Use Features: ■ H igh gain at high current ■ Low S aturation Voltage: V'cetsaf < 1.1 V, @ ic= 4 A, I b=0.4 A


    OCR Scan     		PDF 2N3055 M302271 2N3055 2n3055 collector characteristic curve 2N3055 curve