POWER TRANSISTOR BJT 1000 A Search Results

POWER TRANSISTOR BJT 1000 A Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

POWER TRANSISTOR BJT 1000 A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NCP1450ASN50T1G Abstract: NCP1450ASN50T1 5 pin IC marking DAZ tsop 173a Text: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large	Original	NCP1450A NCP1450ASN50T1G NCP1450ASN50T1 5 pin IC marking DAZ tsop 173a	PDF
crt horizontal deflection circuit Abstract: flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver Text: September 19, 2000 AN9009 Analysis of a Resonant Type High Voltage Fly-back Converter in a CRT Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea Semiconductor Tel: 82-32-680-1380, Fax:82-32-680-1317	Original	AN9009 crt horizontal deflection circuit flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver	PDF
NCP1450ASN50T1 Abstract: 27T1 bjt ce amplifier JESD22-A114 JESD22-A115 JESD78 NCP1450A NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1 Text: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large	Original	NCP1450A NCP1450A NCP1450A/D NCP1450ASN50T1 27T1 bjt ce amplifier JESD22-A114 JESD22-A115 JESD78 NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1	PDF
5 pin IC marking DAZ Abstract: NCP1450ASN50T1 bjt 100 A114 A115 JESD22 NCP1450A NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1 Text: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step–up DC–DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large	Original	NCP1450A NCP1450A r14525 NCP1450A/D 5 pin IC marking DAZ NCP1450ASN50T1 bjt 100 A114 A115 JESD22 NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1	PDF
NCP1450 Abstract: NCP1450ASN50T1G NCP1450ASN50T1 NCP1450A NCP1450ASN19T1 NCP1450ASN19T1G NCP1450ASN27T1 NCP1450ASN27T1G NCP1450ASN30T1 NCP1450ASN30T1G Text: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step−up DC−DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large	Original	NCP1450A NCP1450A NCP1450A/D NCP1450 NCP1450ASN50T1G NCP1450ASN50T1 NCP1450ASN19T1 NCP1450ASN19T1G NCP1450ASN27T1 NCP1450ASN27T1G NCP1450ASN30T1 NCP1450ASN30T1G	PDF
PWM Controller For BJT Abstract: power transistor bjt 1000 a transistor marking CS Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the	Original	AP3720 20kHz AP3720 PWM Controller For BJT power transistor bjt 1000 a transistor marking CS	PDF
Application Note 41 Abstract: phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 41 Faster Switching from Standard Couplers Optocouplers offer tremendous advantages in minimizing EMI and noise susceptibility. It is not an exaggeration to say that a healthy sprinkling of opto-isolation has often meant	Original	16-Mar-12 Application Note 41 phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt	PDF
AN-1084 Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841 Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5	Original	AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841	PDF
HBT transistor Abstract: InP HBT transistor ECG008 1 micro farad capacitor InP HBT transistor low noise power transistor bjt 1000 a Text: PRELIMINARY DATA SHEET ECG008 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications n n n n n n n n DC to 3000 MHz 40 dBm Typical OIP3 at 1000 MHz Highly Reliable InGaP HBT 15.0 dB Typical Gain at 1000 MHz 23.0 dBm Typical P1dB at 2000 MHz 4.8 dB Typical Noise Figure at 2000 MHz	Original	ECG008 OT-89 ECG008 OT-89 SS-000353-000 HBT transistor InP HBT transistor 1 micro farad capacitor InP HBT transistor low noise power transistor bjt 1000 a	PDF
InP HBT transistor Abstract: HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics ECG003 MOTOROLA RF TRANSISTORS srf Text: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications n n DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz	Original	ECG003 OT-89 ECG003 OT-89 SS-000375-000 InP HBT transistor HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics MOTOROLA RF TRANSISTORS srf	PDF
BJT with i-v characteristics Abstract: AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249 Text: MT-096 TUTORIAL RFI Rectification Concepts INPUT-STAGE RFI RECTIFICATION SENSITIVITY A well-known but poorly understood phenomenon in analog integrated circuits is RFI rectification, specifically as it occurs in op amps and in-amps. While amplifying very small	Original	MT-096 BJT with i-v characteristics AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249	PDF
InP HBT transistor low noise Abstract: 1 micro farad capacitor 100 micro farad capacitor ECG001 current amplifier note darlington InP HBT transistor Text: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications n n Broadband Gain Blocks n n n n DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz	Original	ECG001 OT-89 ECG001 SS-000349-000 InP HBT transistor low noise 1 micro farad capacitor 100 micro farad capacitor current amplifier note darlington InP HBT transistor	PDF
IGBT SCHEMATIC Abstract: motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541 Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. INTRODUCTION As power conversion relies more on switched applications,	Original	AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541	PDF
30 micro farad capacitor 6000 volt Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660 Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability	Original	ECG014 OT-89 ECG014 OT-89 SS-000122-000 30 micro farad capacitor 6000 volt HBT transistor j1 05075 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660	PDF

Untitled Abstract: No abstract text available Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 2 — 23 June 2011 Application note Document information Info Content Keywords BISS, MOSFET-Schottky, low VCEsat, battery charger, Li-Ion battery	Original	AN10910	PDF
transistor bjt 331 Abstract: 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603 Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 01 — 28 April 2010 Application note Document information Info Content Keywords BISS, Battery charger, Li-Ion battery Li-polymer battery , overvoltage	Original	AN10910 AN10910 transistor bjt 331 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603	PDF
mj150* darlington Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35	Original	2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp	PDF
BJT with i-v characteristics Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available	Original	ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK	PDF
P-Channel IGBT Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .	Original		PDF
MJE 2160 N Abstract: power BJT PNP spice model stabiliser circuit diagram BJT with V-I characteristics 500E 800E MDC5001T1 transistor mje 2050 Text: LESHAN RADIO COMPANY, LTD. Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter	Original	MDC5001T1 OT-363 MDC5000 MDC5001T MJE 2160 N power BJT PNP spice model stabiliser circuit diagram BJT with V-I characteristics 500E 800E MDC5001T1 transistor mje 2050	PDF
MJE 2160 N Abstract: 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1 Text: Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter	Original	MDC5001T1 OT-363 MDC5000 MDC5001T MJE 2160 N 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1	PDF
MRF9811 Abstract: ic3 pin diagram Text: ON Semiconductort Low Voltage Bias Stabilizer with Enable MDC5001T1 • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction • • • • • and Field Effect Transistors Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components	Original	MDC5001T1 MRF9811 MDC5000 ic3 pin diagram	PDF
AZD013 Abstract: No abstract text available Text: IQ Switch ProxSense® Series Application Note: AZD013 IQ Switch® - ProxSense® Series ProxSense® ESD performance overview Contents Introduction . 1	Original	AZD013 IEC61000-4-2: IEC61000-4-2 AZD013	PDF
reverse-conducting thyristor Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate	Original	MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor	PDF

POWER TRANSISTOR BJT 1000 A Search Results

POWER TRANSISTOR BJT 1000 A Result Highlights (5)

POWER TRANSISTOR BJT 1000 A Datasheets Context Search

NCP1450ASN50T1G

crt horizontal deflection circuit

NCP1450ASN50T1

5 pin IC marking DAZ

NCP1450

PWM Controller For BJT

Application Note 41

AN-1084

HBT transistor

InP HBT transistor

BJT with i-v characteristics

InP HBT transistor low noise

IGBT SCHEMATIC

30 micro farad capacitor 6000 volt

Untitled

transistor bjt 331

mj150* darlington

BJT with i-v characteristics

P-Channel IGBT

MJE 2160 N

MJE 2160 N

MRF9811

AZD013

reverse-conducting thyristor