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Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 12 KF4 61,5 61,5 M6 13 190 31,5 171 57 2,8x0,5 U V CX CU CY W CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx
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Eupec fz 1200 r 12
Abstract: vrm ic
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 7 41,25 M6 79,4 external connection to be done C C C E E E C G E external connection to
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IGBT FF 300 r12
Abstract: FF400R12KF4
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
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A15/97
IGBT FF 300 r12
FF400R12KF4
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1
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FD600
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
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IC1500
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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4500a
Abstract: GA170DL
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 300 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 300 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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00365 r
Abstract: eupec T 271 N 150a gto
Text: European PowerSemiconductor and Electronics Company Marketing Information D 271 S 45 T 2 center holes ∅ 3,5 x 4,0 C A SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 271 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values
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4kA IGBT
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 2400 R 12 KF4 61,5 61,5 13 190 171 31,5 57 1 2 3 C 4 C C E C E E M8 G M4 28 8 7 6 20,25 5 7 für M6-Schraube 41,25 79,4 external connections to be done C C C E E C G E E external connections
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D2209N
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2209 N ø 48 6 17,5 3,2 Anode ø 48 +0.1 ø3,5 x 3,5 tief / depth beidseitig / on both sides 30 7 max. 75 26 2,3 Kathode Cathode 4 VW K July 1996
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D291S45T
Abstract: D291S
Text: European PowerSemiconductor and Electronics Company Marketing Information D 1901 S ø7 A C 3,5+ 0,1 VWK January Schnelle Gleichrichterdiode Fast Diode D 1901 S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 81 S M5x11 Z4-1 15,5 20 20 80 92 AK K A March 1998 DD 81 S Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Spitzensperrspannung
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M5x11
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TD3401
Abstract: n1106
Text: European PowerSemiconductor and Electronics Company Marketing Information D 3301 N D 3401 N C A +0,1 ø3,5 x 4,5 deep on both sides 75 -0,3 120 VWK Febr. 1997 D 3301 N 32.40 T * D 3401 N 32.40.T Elektrische Eigenschaften Höchstzulässige Werte Periodische Spitzensperrspannung
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD B6U 144 N 10.16.R ECONO 80 104,8 80 70,4 60,96 15,24 N- 5,5 P+ R NS P+ T 3,81 11,43 57,15 93±0,2 max. 107,5 P+ 13 R 1-4 S 5-8 T 9-12 P+ 16 N- 14 N- 17 VWK Sep. 1996
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FD 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1
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D660N
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 660 N 14 - +0,5 A +0,2 3,5 41,4 - +0,5 +0,1 -0,3 +0,2 t= 2 25 K VW K July 1996 D 660 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte
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Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information D 56 S 40.45 D 56 U 40.45 15 5,5 SW27 M12 Type Circuit symbol Cathode Anode S Connection pin Case U Case Connection pin Ma 1-BE / 23 Jun 1993 Schnelle Gleichrichterdiode Fast Diode
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Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information TT 101 F screwing depth max. 12 fillister head screw M6x15 Z4-1 III II plug A 2,8 x 0,8 I 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK Febr. 1997 TT 101 F, TD 101 F, DT 101 F
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M6x15
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D2200N
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2200 N ø50 ø3,5x3,5 deep max.12 C A ø3,5x3,5tief ø50 pump out pipe metallic connected to the cathode 74 VW K July 1996 D 2200 N Elektrische Eigenschaften
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D2200N
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D291S45T
Abstract: Gleichrichter D921
Text: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values
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