Untitled
Abstract: No abstract text available
Text: AP20GT60ASI-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.7V@IC=12A RoHS Compliant Product G CE VCES 600V IC 12A TO-220CFM(I) C G
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AP20GT60ASI-HF
O-220CFM
100us
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AP20GT60
Abstract: No abstract text available
Text: AP20GT60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A RoHS Compliant Product G C E VCES 600V IC 20A TO-220CFM(I) C G E Absolute Maximum Ratings
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AP20GT60I
O-220CFM
100oC
AP20GT60
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Untitled
Abstract: No abstract text available
Text: AP20GT60ASP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.7V@IC=19A RoHS Compliant Product G C E VCES 600V IC 19A TO-220(P) C G E Absolute Maximum Ratings
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AP20GT60ASP-HF
O-220
100us
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Untitled
Abstract: No abstract text available
Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E
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AP30G100W
30G100W
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Untitled
Abstract: No abstract text available
Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features 1100V VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 30A IC C G RoHS Compliant C
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AP30G120W
Fig11.
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Untitled
Abstract: No abstract text available
Text: AP30G120CSW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage VCE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant & Halogen-Free IC
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AP30G120CSW-HF
Fig11.
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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Untitled
Abstract: No abstract text available
Text: AP30G120CSW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage VCE sat =2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free
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AP30G120CSW-HF
Fig11.
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AP50G60W-HF
Abstract: 50A33
Text: AP50G60W-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ. =2.5V@IC=40A ▼ RoHS Compliant & Halogen-Free VCES 600V IC 40A G C C
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AP50G60W-HF
100oC
100us
AP50G60W-HF
50A33
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Untitled
Abstract: No abstract text available
Text: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C CO-PAK, IGBT with FRD RoHS Compliant G C
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AP30G120SW
Fig11.
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Untitled
Abstract: No abstract text available
Text: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage V CE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant IC 1200V 30A C C
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AP30G120ASW
Fig11.
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Untitled
Abstract: No abstract text available
Text: AP40G120W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C 1200V VCES Advanced IGBT Technology Low Saturation Voltage VCE sat =3.15V@IC=40A Industry Standard TO-3P Package IC 40A C G C E E Absolute Maximum Ratings
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AP40G120W
Fig11.
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings
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AP20GT60SW
-55tor-Emitter
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AP30G120SW
Abstract: AP30G120 ictc 500V N-Channel IGBT TO-3P
Text: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High speed switching VCES ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C ▼ CO-PAK, IGBT with FRD ▼ RoHS Compliant
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AP30G120SW
Fig11.
AP30G120SW
AP30G120
ictc
500V N-Channel IGBT TO-3P
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AP25G45GEM
Abstract: No abstract text available
Text: AP25G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 4.5V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 150A C C C C G G E SO-8
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AP25G45GEM
100uF
AP25G45GEM
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Untitled
Abstract: No abstract text available
Text: AP50G60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage V CE sat ,Typ.=2.6V@IC=33A Built-in Fast Recovery Diode VCES 600V IC 45A C C G E E Absolute Maximum Ratings
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AP50G60SW
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AP28G45GEM
Abstract: No abstract text available
Text: AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 3.3V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8
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AP28G45GEM
AP28G45GEM
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Untitled
Abstract: No abstract text available
Text: AP28G40GEM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance C C ▼ High Peak Current Capability C C ▼ Low Gate Drive ▼ Strobe Flash Applications VCE 400V ICP 150A G ▼ RoHS Compliant & Halogen-Free
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AP28G40GEM-HF
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Untitled
Abstract: No abstract text available
Text: AP26G40GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V Low Gate Drive C C C VCE 400V ICP 150A C Strobe Flash Applications RoHS Compliant & Halogen-Free TSSOP-8 E E E C G G E Absolute Maximum Ratings
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AP26G40GEO-HF
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Untitled
Abstract: No abstract text available
Text: AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Pick Current Capability C 3.3V Gate Drive Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8 E E E
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AP28G45GEM
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Untitled
Abstract: No abstract text available
Text: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability E Low Gate Drive Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8 C C C G E Absolute Maximum Ratings
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AP28G45GEO-HF
00V/us,
0V-30V)
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transistor C635
Abstract: c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147
Text: BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement
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BC635;
BCP54;
BCX54
BC635
SC-43A
BC636
BCP54
OT223
SC-73
BCP51
transistor C635
c63516
BD9397
C635 Philips
C6351
c635 transistor
BCX54-SOT89
PHILIPS BCX54
BCP54, BCX54
transistor BC 147
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transistor smd yw
Abstract: PMEM4020AND PMEM4020APD smd transistor equivalent table MHC081
Text: PMEM4020AND NPN transistor/Schottky rectifier module Rev. 01 — 4 October 2004 Product data sheet 1. Product profile 1.1 General description Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
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PMEM4020AND
OT457
SC-74)
PMEM4020APD.
transistor smd yw
PMEM4020AND
PMEM4020APD
smd transistor equivalent table
MHC081
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BFT25A
Abstract: MCD113 MCD110 RF POWER TRANSISTOR NPN
Text: BFT25A NPN 5 GHz wideband transistor Rev. 04 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up
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BFT25A
BFT25A
MCD113
MCD110
RF POWER TRANSISTOR NPN
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