Emcore solar cell
Abstract: GaAs tunnel diode multi-junction "solar cell" NIEL proton tunnel diode tunnel diode GaAs GAAS multi-junction solar cell" NIEL for solar cell inp
Text: PROTON AND ELECTRON RADIATION ANALYSIS OF GaInP2/GaAs SOLAR CELLS P. R. Sharps, C. H. Thang, P. A. Martin, and H. Q. Hou EMCORE Photovoltaics 10420 Research Road SE Albuquerque, NM 87112 ABSTRACT Electron and proton radiation damage analysis of solar cells is extremely important for predicting the response of
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OR-2000
Emcore solar cell
GaAs tunnel diode
multi-junction "solar cell"
NIEL
proton
tunnel diode
tunnel diode GaAs
GAAS multi-junction solar cell"
NIEL for solar cell inp
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Untitled
Abstract: No abstract text available
Text: 66193 PROTON RADIATION TOLERANT OPTOCOUPLER REPLACEMENT FOR 3C91C OPTOELECTRONIC PRODUCTS DIVISION 05/06/2013 Features: Applications: • High Reliability Base lead eliminated for improved noise immunity Rugged package
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3C91C)
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Untitled
Abstract: No abstract text available
Text: 66193 PROTON RADIATION TOLERANT OPTOCOUPLER REPLACEMENT FOR 3C91C OPTOELECTRONIC PRODUCTS DIVISION 05/06/2013 Features: Applications: • High Reliability Base lead eliminated for improved noise immunity Rugged package
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3C91C)
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Untitled
Abstract: No abstract text available
Text: Application Note 1938 Single Event Effects SEE Testing of the ISL71091SEHxx Precision Voltage References Family Introduction SEE Test Objectives The intense proton and heavy ion environment encountered in space applications can cause a variety of single event effects
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ISL71091SEHxx
AN1938
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vcsel spice model
Abstract: 1310nm led Modulating VCSELs 1310nm photodiode 6 Ghz 10Gbps TOcan
Text: APPLICATION NOTE Modulating Finisar Oxide VCSELs INTRODUCTION In the last decade, proton isolated VCSELs have become the industry standard for short wavelength 850nm gigabit data communications links on multimode fiber. As the speeds have increased beyond 2Gbps, however, the oxide isolated
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850nm)
1-866-MY-VCSEL
vcsel spice model
1310nm led
Modulating VCSELs
1310nm photodiode 6 Ghz
10Gbps TOcan
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3C91C
Abstract: proton 3C91
Text: 66193 Mii PROTON RADIATION TOLERANT OPTOCOUPLER REPLACEMENT FOR 3C91C OPTOELECTRONIC PRODUCTS DIVISION Rev A 1/11/08 Features: Applications: • • • • • • • • • • High Reliability Base lead eliminated for improved noise immunity Rugged package
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3C91C)
3C91C
proton
3C91
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Untitled
Abstract: No abstract text available
Text: Application Note 1894 Author: Nick van Vonno Single Event Effects SEE Testing of the ISL71590SEH Temperature Sensor Introduction The intense proton and heavy ion environment encountered in space applications can cause a variety of destructive and nondestructive single-event effects in electronic circuitry,
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ISL71590SEH
AN1894
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prisma
Abstract: proton emv 7816 smartcard EMV CARDS DDA proton basic e purse R3BC proton source emv card "electronic purse"
Text: Proton PRISMA smartcard products Unique flexibility for every requirement STMicroelectronics has an extensive, modular offering to meet the needs of the smartcard supply chain and card issuers. Whatever your requirements - card specifications, masks, chips, finished cards or personalized cards - ST,
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FLPROTONSC/1003
prisma
proton
emv 7816 smartcard
EMV CARDS DDA
proton basic
e purse
R3BC
proton source
emv card
"electronic purse"
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laser diode philips
Abstract: diode code ae
Text: Philips Components cql72a/d _ J _ DEVELOPMENT DATA This data sheet contains advance information and specifications which are subject to change without notice. HIGH POWER COLLIMATOR PEN The CQL72A/D is a high power collim ator pen containing a MOVPE proton bombarded laser. This
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CQL72A/D
laser diode philips
diode code ae
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renesas Lot Code Identification
Abstract: 3M Touch Systems
Text: CYRS1543AV18 CYRS1545AV18 72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton
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CYRS1543AV18
CYRS1545AV18
72-Mbit
165-ball
renesas Lot Code Identification
3M Touch Systems
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Untitled
Abstract: No abstract text available
Text: CYRS1542AV18 CYRS1544AV18 72-Mbit QDR II+ SRAM Two-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Two-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton
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CYRS1542AV18
CYRS1544AV18
72-Mbit
165-ball
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Untitled
Abstract: No abstract text available
Text: CYRS1543AV18 CYRS1545AV18 72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton
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CYRS1543AV18
CYRS1545AV18
72-Mbit
165-ball
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5962F1120101QXA
Abstract: 5962F1120101VXA CYRS1544AV18-200GCMB 3M Touch Systems CYPT1542AV18-250GCMB CYRS1542AV18
Text: CYRS1542AV18 CYRS1544AV18 72-Mbit QDR II+ SRAM Two-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Two-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton
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CYRS1542AV18
CYRS1544AV18
72-Mbit
165-ball
CYRS1542AV18
5962F1120101QXA
5962F1120101VXA
CYRS1544AV18-200GCMB
3M Touch Systems
CYPT1542AV18-250GCMB
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5962F1120102QXA
Abstract: samsung Lot Code Identification samsung capacitance Lot Code Identification 3M Touch Systems
Text: CYRS1543AV18 CYRS1545AV18 72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton
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CYRS1543AV18
CYRS1545AV18
72-Mbit
165-ball
5962F1120102QXA
samsung Lot Code Identification
samsung capacitance Lot Code Identification
3M Touch Systems
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renesas Lot Code Identification
Abstract: 3M Touch Systems si 1225 hd
Text: CYRS1543AV18 CYRS1545AV18 72-Mbit QDR II+ SRAM Four-Word Burst Architecture with RadStop Technology 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data • Total Dose =300 Krad ■ Soft error rate both Heavy Ion and proton
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CYRS1543AV18
CYRS1545AV18
72-Mbit
165-ball
renesas Lot Code Identification
3M Touch Systems
si 1225 hd
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gemplus
Abstract: AT83C21GC SSOP24 emv 7816 smart card atmel tape and reel
Text: Features • Smart Card Interface • • • • – Compliance with Standards • ISO/IEC 7816-1, 2, 3 and 4 • EMV 2000 • CB • Mondex , Proton, ZKA, Other: Contact Gemplus® – Supported Smart Cards • Number of Smart Cards Supported: 1 • Asynchronous Cards: T=0 and T=1
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4247CS
gemplus
AT83C21GC
SSOP24
emv 7816 smart card
atmel tape and reel
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4N50
Abstract: prescalers Upset
Text: W hat are Single Event Effects? Single Event Effects are caused by a single, energetic particle which can originate from the ions in a cosmic ray galactic or solar in origin or from a high energy proton. Two major types of Single Event Effects are described below; Single Event Upsets (SEU) are
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AT83C5121
Abstract: AT83C21GC ISO/IEC 7816-1 QFN32 SSOP24 gemplus AT83C21GCxxx-PURUL gemplus and card qfn32 tray
Text: Features • Smart Card Interface • • • • – Compliance with Standards • ISO/IEC 7816-1, 2, 3 and 4 • EMV 2000 • CB • Mondex , Proton, ZKA, Other: Contact Gemplus® – Supported Smart Cards • Number of Smart Cards Supported: 1 • Asynchronous Cards: T=0 and T=1
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4247DS
AT83C5121
AT83C21GC
ISO/IEC 7816-1
QFN32
SSOP24
gemplus
AT83C21GCxxx-PURUL
gemplus and card
qfn32 tray
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mondex
Abstract: gemplus AT83C21GC SSOP24
Text: Features • Smart Card Interface • • • • – Compliance with Standards • ISO/IEC 7816-1, 2, 3 and 4 • EMV 2000 • CB • Mondex , Proton, ZKA, Other: Contact Gemplus® – Supported Smart Cards • Number of Smart Cards Supported: 1 • Asynchronous Cards: T=0 and T=1
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4247BS
mondex
gemplus
AT83C21GC
SSOP24
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ISO/IEC 7816-1
Abstract: "iso 7816-1" gemplus and card ATMEL smart card iso 7816-1 oscillator resonator capacitor resistor AT83C21GC SSOP24 gemplus
Text: Features • Smart Card Interface • • • • – Compliance with Standards • ISO/IEC 7816-1, 2, 3 and 4 • EMV V96 • CB • Mondex , Proton, ZKA, Other: Contact Gemplus® – Supported Smart Cards • Number of Smart Cards Supported: 1 • Asynchronous Cards: T=0 and T=1
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4247AS
ISO/IEC 7816-1
"iso 7816-1"
gemplus and card
ATMEL smart card
iso 7816-1
oscillator resonator capacitor resistor
AT83C21GC
SSOP24
gemplus
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cots fpga radiation
Abstract: Upset CREME96 fpga radiation COTS XQVR300 RAM SEU
Text: Radiation Characterization, and SEU Mitigation, of the Virtex FPGA for SpaceBased Reconfigurable Computing † Earl Fuller2, Michael Caffrey1, Anthony Salazar1, Carl Carmichael3, Joe Fabula 3 1 Los Alamos National Laboratory 2 Novus Technologies, Inc. 3 Xilinx, Inc.
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NS-39,
CREME96:
cots fpga radiation
Upset
CREME96
fpga radiation COTS
XQVR300
RAM SEU
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CREME96
Abstract: cots fpga radiation 115641 fpga radiation COTS radiation cots cmos RAM SEU proton XQVR300
Text: Radiation Testing Update, SEU Mitigation, and Availability Analysis of the Virtex FPGA for Space Reconfigurable Computing † Earl Fuller2, Michael Caffrey1, Anthony Salazar1, Carl Carmichael3, Joe Fabula 3 1 Los Alamos National Laboratory 2 Novus Technologies, Inc.
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CREME96:
XAPP216,
CREME96
cots fpga radiation
115641
fpga radiation COTS
radiation cots cmos
RAM SEU
proton
XQVR300
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TIBC
Abstract: advantis crypto smartcard visa TIBC 3.0 data access CEPS PKCS11 EMV CARDS DDA TIBC 3.0 implementation data access prisma carte moneo
Text: System-on-Chip solutions for finance Latest-generation smartcard solutions for banking STMicroelectronics is a world leader in the development and delivery of chip products and solutions for the banking sector. This is the result of over 20 years in the industry, delivering
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FLFINANCE1105
TIBC
advantis crypto
smartcard visa
TIBC 3.0 data access
CEPS
PKCS11
EMV CARDS DDA
TIBC 3.0 implementation data access
prisma
carte moneo
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rcl 3702
Abstract: Mii53250 B0847 davis scott fluke 8050a digital multimeter HSSR-7110 Model 434 jl 54123 HP34401A optocouplers
Text: 905 E. Walnut Street Garland, Texas 75040 TEL 972 272-3571 FAX (972) 494-2281 www.micropac.com Micropac Industries, Inc. MICROPAC INDUSTRIES, INC. HYBRID MICROELECTRONICS DIVISION RADIATION REPORTS 04/27/01 INTRODUCTION TO RADIATION TESTING REPORTS Micropac Industries Inc. (Mii) wishes to thank Ken Label of NASA Goddard Space Flight Center
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Br-81
Cl-35
I-127
rcl 3702
Mii53250
B0847
davis scott
fluke 8050a digital multimeter
HSSR-7110
Model 434
jl 54123
HP34401A
optocouplers
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