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    PSA14 Search Results

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    PSA14 Price and Stock

    Mini-Circuits PSA-14-

    IC AMP LTE 10MHZ-10GHZ MMM1362
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    DigiKey PSA-14- Cut Tape 993 1
    • 1 $9.05
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    • 100 $6.42
    • 1000 $5.22003
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    PSA-14- Digi-Reel 993 1
    • 1 $9.05
    • 10 $9.05
    • 100 $6.42
    • 1000 $5.22003
    • 10000 $5.22003
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    PEI Genesis PT06CGPSA14-15P

    PT 15C 1#16,14#20 PIN PLUG
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    DigiKey PT06CGPSA14-15P Bulk 30 1
    • 1 $80.24
    • 10 $57.32
    • 100 $40.94
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    PEI Genesis PT06CGPSA14-18P

    PT 18C 18#20 PIN PLUG
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    DigiKey PT06CGPSA14-18P Bulk 30 1
    • 1 $83.1
    • 10 $59.36
    • 100 $42.4
    • 1000 $42.4
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    PEI Genesis PT06CGPSA14-18S

    PT 18C 18#20 SKT PLUG
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    DigiKey PT06CGPSA14-18S Bulk 30 1
    • 1 $94.59
    • 10 $67.56
    • 100 $48.26
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    PEI Genesis PT06CGPSA14-19P

    PT 19C 19#20 PIN PLUG
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    DigiKey PT06CGPSA14-19P Bulk 30 1
    • 1 $82.84
    • 10 $59.17
    • 100 $42.27
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    PSA14 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PSA-14 MCE / KDI ATTENUATOR, PILL, DROP-IN Original PDF

    PSA14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADF4156

    Abstract: AN-202
    Text: PSA1450F-LF Rev A1 Fractional-N Phase-Locked Loop Surface Mount Module Applications Application Notes • Fixed Wireless • Test Equipments • • AN-107: Manual Soldering Technique • AN-202: Programming Z-COMM PLLs Performance Specifications Min Frequency


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    PDF PSA1450F-LF AN-107: AN-202: PLL-24S1-H PLL-24S1 FRM-S-002 ADF4156 AN-202

    Untitled

    Abstract: No abstract text available
    Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 1000 KHz • Package Style: PLL-24S APPLICATIONS • Fixed Wireless


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    PDF PSA1450F-LF PLL-24S

    ADF4156

    Abstract: AN-202
    Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 1000 KHz • Package Style: PLL-24S1 APPLICATIONS


    Original
    PDF PSA1450F-LF PLL-24S1 Switc10 PLL-24S1-H ADF4156 AN-202

    Untitled

    Abstract: No abstract text available
    Text: PSA1450F-LF Rev A1 Fractional-N Phase-Locked Loop Surface Mount Module Applications Application Notes • Fixed Wireless • Test Equipments • • AN-107: Manual Soldering Technique • AN-202: Programming Z-COMM PLLs Performance Specifications Min Frequency


    Original
    PDF PSA1450F-LF AN-107: AN-202: PLL-24S1-H PLL-24S1 FRM-S-002

    ADF4156

    Abstract: AN-200 AN-201 AN-202
    Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 8 KHz • Package Style: PLL-24S APPLICATIONS • Fixed Wireless


    Original
    PDF PSA1450F-LF PLL-24S ADF4156 AN-200 AN-201 AN-202

    Untitled

    Abstract: No abstract text available
    Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 8 KHz • Package Style: PLL-24 APPLICATIONS • Fixed Wireless


    Original
    PDF PSA1450F-LF PLL-24 P18-24

    Untitled

    Abstract: No abstract text available
    Text: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 1000 KHz • Package Style: PLL-24S APPLICATIONS • Fixed Wireless


    Original
    PDF PSA1450F-LF PLL-24S

    DDA 003A

    Abstract: CON12 M68HC11 MC68HC11C0 MC68HC11C0CFN2 MC68HC11C0CFU2 MC68HC11C0CFU3 MC68HC11C0FU3 MC68HC11C0MFU2 MC68HC11C0VFN2
    Text: MOTOROLA Order this document by MC68HC11C0TS/D SEMICONDUCTOR TECHNICAL DATA MC68HC11C0 Technical Summary 8-Bit Microcontroller 1 Introduction The MC68HC11C0 high-performance microcontroller unit MCU is an enhanced member of the M68HC11 family of microcontrollers. Excluding its new features, the MC68HC11C0 is very similar to


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    PDF MC68HC11C0TS/D MC68HC11C0 MC68HC11C0 M68HC11 MC68HC11E9 64Kbyte MPC505TS/D DDA 003A CON12 MC68HC11C0CFN2 MC68HC11C0CFU2 MC68HC11C0CFU3 MC68HC11C0FU3 MC68HC11C0MFU2 MC68HC11C0VFN2

    b20100

    Abstract: MPSA12
    Text: S E M IC O N D U C T O R MPSA12 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol


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    PDF MPSA12 PSA14 b20100 MPSA12

    2N6427

    Abstract: MMBT6427 MPSA14
    Text: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted


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    PDF 2N6427 MMBT6427 MPSA14 MMBT6427

    Untitled

    Abstract: No abstract text available
    Text: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS


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    PDF 2N6427 MMBT6427 2N6427 OT-23 PSA14

    2N5306

    Abstract: MPSA14
    Text: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5306 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS


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    PDF 2N5306 MPSA14 2N5306

    2N6427

    Abstract: MMBT6427 MPSA14
    Text: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys


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    PDF 2N6427 MMBT6427 OT-23 MPSA14 2N6427 MMBT6427

    mpsa14

    Abstract: transistor k 2628 Technical transistor k 2628 MPS-A14 Small-Signal Transistors, FETs and Diodes Device transistor D 2624
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA13 M PSA14* NPN Silicon COLLECTOR 3 'M o to ro la Preferred Device BA SE \ fy EMITTER 1 MAXIMUM RATINGS Rating Symbol Value Unit Vdc Vdc Collector-Emitter Voltage VCES 30 Collector-Base Voltage


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    PDF MPSA13 PSA14* MPSA14 mpsa14 transistor k 2628 Technical transistor k 2628 MPS-A14 Small-Signal Transistors, FETs and Diodes Device transistor D 2624

    2N5308

    Abstract: No abstract text available
    Text: SEMICONDUCTOR ¡m 2N5308 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted


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    PDF 2N5308 PSA14 2N5308

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR ¡m 2N5307 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted


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    PDF 2N5307 PSA14

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N6426 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted


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    PDF 2N6426 PSA14

    MPSa13 equivalent

    Abstract: mpsa13
    Text: TO SHIBA MPSA13,14 Darlington Transistor Silicon NPN Epitaxial Type For Printer Drive, Core Drive, and LED Drive Applications Features • High DC Current Gain @ lc = 100mA - M PSA13hFE= 10,000 Min. - M PSA14hFE = 20,000 Min. Absolute Maximum Ratings Ta = 25 C


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    PDF MPSA13 100mA PSA13hFE= PSA14hFE 25TMC PS-A13) MPS-A14) 100mA MPS-A13) MPSa13 equivalent

    2N5307

    Abstract: MPSA14
    Text: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5307 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS


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    PDF 2N5307 MPSA14 2N5307

    2N6426

    Abstract: MPSA14
    Text: SEMICONDUCTOR 2N6426 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted


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    PDF 2N6426 MPSA14 2N6426

    2N530

    Abstract: 2N5308 MPSA14 to-92 NPN Darlington
    Text: S S E f v l l G O f s l O L J C î T Q R ;:m 2N530Ô NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS


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    PDF 2N530Ã MPSA14 2N530 2N5308 to-92 NPN Darlington

    MPSA12

    Abstract: MPSA14 to-92 NPN Darlington
    Text: S E M IC O N D U C T O R MPSA12 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted


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    PDF MPSA12 MPSA14 MPSA12 to-92 NPN Darlington

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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