TH4B
Abstract: No abstract text available
Text: PHAST-3N STM-1/STS-3/STS-3c SDH/SONET Overhead Terminator with Telecom Bus Interface TXC-06103 DATA SHEET • • • • • • • • • • • • • • • • • Bit-serial SDH/SONET line interface - Pseudo-ECL interface with clock recovery and synthesis
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TXC-06103
64-byte
TXC-06103-MB
TH4B
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Untitled
Abstract: No abstract text available
Text: TB62201AFG TOSHIBA Bi-CMOS Processor IC Silicon Monolithic TB62201AFG Dual-Stepping Motor Driver IC for OA Equipment Using PWM Chopper Type The TB62201AFG is a dual-stepping motor driver driven by chopper micro-step pseudo sine wave. To drive two-phase stepping motors, Two pairs of 16-bit latch and
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TB62201AFG
TB62201AFG
16-bit
200-step
board100
HSOP36-P-450-0
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Untitled
Abstract: No abstract text available
Text: ADS7881 SLAS400B − SEPTEMBER 2003 − REVISED NOVEMBER 2005 12ĆBIT, 4ĆMSPS LOW POWER SAR ANALOGĆTOĆDIGITAL CONVERTER FEATURES D 4 MHz Sample Rate, 12-Bit Resolution D Zero Latency D Unipolar, Pseudo Differential Input, Range: D D D D D D D D − 0 V to 2.5 V
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ADS7881
SLAS400B
12BIT,
12-Bit
48-Pin
ADS7881
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ADS7881
Abstract: ADS7881IPFBR ADS7881IPFBT ADS7881IRGZR ADS7881IRGZT DB10 THS4211
Text: ADS7881 SLAS400B − SEPTEMBER 2003 − REVISED NOVEMBER 2005 12ĆBIT, 4ĆMSPS LOW POWER SAR ANALOGĆTOĆDIGITAL CONVERTER FEATURES D 4 MHz Sample Rate, 12-Bit Resolution D Zero Latency D Unipolar, Pseudo Differential Input, Range: D D D D D D D D − 0 V to 2.5 V
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ADS7881
SLAS400B
12BIT,
12-Bit
48-Pin
ADS7881om
ADS7881
ADS7881IPFBR
ADS7881IPFBT
ADS7881IRGZR
ADS7881IRGZT
DB10
THS4211
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Untitled
Abstract: No abstract text available
Text: ADS8254 www.ti.com. SLAS643 – MARCH 2009 16-BIT, 1-MSPS, PSEUDO-BIPOLAR DIFFERENTIAL SAR ADC WITH ON-CHIP ADC
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ADS8254
SLAS643
16-BIT,
16-Bit
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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ATF-38143
Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2 k5 z2 Cgd01 D 1709 N 20
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • Low Cost Surface Mount Small Plastic Package SOT-343 4 lead SC-70
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ATF-38143
OT-343
SC-70)
5968-7868E
ATF-38143
ATF-38143-BLK
ATF-38143-TR1
ATF-38143-TR2
k5 z2
Cgd01
D 1709 N 20
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nec 8772
Abstract: LD 7522 142.58 NE32584C NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
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NE32584C
NE32584C
NE32584C-S
NE32584C-T1
24-Hour
nec 8772
LD 7522
142.58
NE32584C-S
NE32584C-T1
cha 9935
K 4017
j50 0513 5
5252 f 1001
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pseudomorphic HEMT
Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm
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FPD6836SOT343
FPD6836SOT3
OT343
FPD6836SOT343
mx750
1850MHz)
18dBm
2002/95/EC)
FPD6836SOT343E
FPD6836SOT343E-AG
pseudomorphic HEMT
TRANSISTOR c 5578 B
TRANSISTOR BC 135
0604HQ
OT343
3.5GHz BJT
bc 548 transistor
transistor bc 731
transistor bc 564
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TC51832FL10
Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Text: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with
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832P/S
832P/S
TC51832
256IC
TC51832P
plastic/SP/F/PL/SPL/FL-12
DIP28-P-300)
TC51832FL10
TC51832FL-10
TC51832PL-10
832P
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TC518129
Abstract: de interlace
Text: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes
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TC518129AP/ASP/AF/AFW-80/10/12
TC518129APL/ASPL/AFL/AFWL30/10/12
TC518129AFTLS0/10/12
TC518129APL/ASPL/AFL/AFWL/AFTL-80/10/12
AO-A16
TC518129
de interlace
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low noise pseudomorphic
Abstract: No abstract text available
Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN %5041A _ CMOS LSI LC11011-141 SAIÊYO Computer Image Signal Processing Full-Color Gray-Scale Processor i Preliminary Overview Package Dimensions The LC 11011 -141 is a pseudo gray scale processor for
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LC11011-141
151-Q
256-scale
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N02Q
Abstract: la2730 IC LA3160 Sanyo LA2500
Text: SANYO SEMICONDUCTOR 7997076 S ANY O CORP 7b SEMICONDUCTOR dË | 7 cH7CI7fe. G D Q 1 Û M 5 C ORP LA2500 76C 7 T- 7y-os- 0/ 01845 m o n o lith ic lin e a r 1C CIRCUIT D R AW ING NO.SD3B PSEUDO CLASS A BIAS CIRCUIT FOR POWER AMP 3017B Features • In c o rp o ra tin g the L A 2 5 0 0 in a pure c o m p le m e n ta ry class B p o w e r am p p e rm its th is am p to be changed
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LA2500
3017B
LA2600
LA3160
3016B
N02Q
la2730
IC LA3160
Sanyo LA2500
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518128
Abstract: 518128apl TC518128
Text: TOSHIBA TC518128APL/AFL/AFWL-80LV/10LV/12LV TC518128AFTLS0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 8 A -L V is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s b y 8 bits. The T C 5 1 8 1 2 8 A -L V
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TC518128APL/AFL/AFWL-80LV/10LV/12LV
TC518128AFTLS0LV/10LV/12LV
518128APLyAFL/AFW
L/AFTL-80LV/1
OLV/12LV
518128APL/AFL/AFW
L/AFTL-80LV/1O
LV/12LV
2SA1015
518128
518128apl
TC518128
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SPF 455
Abstract: SPF-1576 SPF 455 H 5 SPF-1676
Text: SPF-1576, -1676 2-26 GHz Low Noise PHEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available
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SPF-1576,
SPF-1576
SPF 455
SPF 455 H 5
SPF-1676
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TC518129AFwl
Abstract: No abstract text available
Text: TOSHIBA TC518129APL/AFL/AFWL-80LV/lOLV/12LV TC518129AFTL80LV/lOLV/12LV SILICON GATE CM O S 131,072 W ORD x 8 BIT C M O S PSEUDO STATIC RAM D escription The TC5181 29A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV
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TC518129APL/AFL/AFWL-80LV/lOLV/12LV
TC518129AFTL80LV/lOLV/12LV
TC5181
TC518129A-LV
D-112
TC518129APL/AFL/AFWL/AFTL-80LV/1OLV/12LV
D-113
TC518129APL/AFL/AFWL/AFTL-80LV/1
TC518129AFwl
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data sw 3205
Abstract: No abstract text available
Text: Ordering number : EN JK4711 CMOS LSI LC338128P, M, PL, ML-7Q/8o7fÖ 1 MEG 131072 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC338128 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized
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JK4711
LC338128P,
LC338128
32-pin
ML-70/8Q/10
data sw 3205
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Untitled
Abstract: No abstract text available
Text: Dynamic RAMs Synchronous DRAM Static RAMs Capacity 2M Organization 12 8 K X 1 6bits 2Bank Type No. Page L C 3 8 2 16 1T Pseudo SRAMs . 191 • Pin Numbering W hen you face the to p side (m arking side) o f a package, w ith its pins tow ard you, num bering starts w ith
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TC518128B
Abstract: TRANSISTOR BFW 11 pin diagram TC518128 TC518128bfl pin diagram of TRANSISTOR BFW 11 TC5181
Text: TOSHIBA T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W 1 V B F IL -7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P iy B S P L /B F V B F W L /B F H r 7 0 iy 8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes
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TC518128B
TC5181
TC518128BPL
SPL/BFL/BFWL/BFTL-70/80/10
TC518128BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1
TRANSISTOR BFW 11 pin diagram
TC518128
TC518128bfl
pin diagram of TRANSISTOR BFW 11
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transistor D128
Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes
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TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L
TC518129B
TheTC518129B
D-132
TC518129BPL/BSPL/BFL/BFWL/BFTL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1OL
D-133
transistor D128
TC518129
D128 transistor
transistor d133
ksh 200 TRANSISTOR equivalent
TRANSISTOR 80l
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TRANSISTOR D206
Abstract: 8512A transistor D209 LA 8512 TC51V8512
Text: TOSHIBA TC51V8512AF/AFT/ATR-12/15 PRELIMINARY SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1V 8512 A F is a 4M bit high speed C M O S pse udo static RAM organized as 5 2 4 ,2 8 8 w o rd s by 8 bits. The T C 51V 8512A F
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TC51V8512AF/AFT/ATR-12/15
D-212
D-213
TRANSISTOR D206
8512A
transistor D209
LA 8512
TC51V8512
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4430B
Abstract: 256x128x8
Text: |Ordering number : EN4430B] CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430B 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single S V power supply and is organized as 32768 words x 8 bits. By using memory
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EN4430B]
4430B
LC33832P,
ML-70/80/10
LC33832
LC33C33832P,
4430B
256x128x8
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TC511632
Abstract: TC511632FL
Text: TOSHIBA TC511632FL/FTL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 1632FL7FTL is a 5 1 2K b t high speed C M O S p s e u d o static RAM organized as 3 2 ,7 6 8 w o rd s by 16 bits. The T C 511632FL7F TL utilizes a o n e tra n s is to r dyn a m ic m e m o ry cell w ith C M O S peripheral circuitry to p rovide high capacity, high
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TC511632FL/FTL-70/85/10
1632FL7FTL
511632FL7F
1632FLVFTL
TC511632
TC511632FL
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