land pattern for TSOP 2-44
Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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pioneer PAL 007 A
Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions
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TSOP-48 pcb LAYOUT
Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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PAL 007 pioneer
Abstract: pioneer PAL 007 A PAL 008 pioneer sn 7600 n 648-0482211 sem 2106 Trays tsop56 TSOP 86 land pattern amd socket 940 pinout Meritec 980020-56
Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions
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allmax
Abstract: AS-44-40-03S-6YAM-GANG "Turpro 840" allpro 88 BP 1148 bytek GANgpro Programmer BP-1148 AS-44-40-03S-6YAM psop 1
Text: M1638 Specification Number: _ PROGRAMMING ADAPTER SPECIFICATION Item: Description: 444003S600YGNG AS-44-40-03S-6YAM-GANG Rev. B REPLACEMENT SOCKET: S-SOR-00-044-B Call Emulation Technology for a replacement socket price and delivery quote. CONNECTION TABLE:
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M1638
444003S600YGNG
AS-44-40-03S-6YAM-GANG
S-SOR-00-044-B
F1638)
044-SO09
AllPro-88XR/88/40,
EMP20
PLUS48/Optima/Expert/MultiSyte
TURPRO-840
allmax
AS-44-40-03S-6YAM-GANG
"Turpro 840"
allpro 88
BP 1148
bytek
GANgpro
Programmer BP-1148
AS-44-40-03S-6YAM
psop 1
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mtbf intel
Abstract: 28F008SA intel PLD 29042 UG773
Text: ADVANCE INFORMATION i n U CORP MEMORY/PLD/ SbE D • 4ûEbl7b Q 07 732 2 O IT B I T L E 28F008SA-L 8 MBIT (1 MBIT x 8 FLASHFILE MEMORY High-Density Symm etrically Blocked Architecture — Sixteen 64 KByte Blocks Low-Voltage Operation — 3.3V ± 0.3V or 5.0V ± 10% V cc
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00773SB
28F008SA-L
40-LL2
E28F008SA-L200
F28F008SA-L200
PA28F008SA-L200
E28F008SA-L250
F28F008SA-L250
PA28F008SA-L250
28F008SA
mtbf intel
intel PLD
29042
UG773
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Untitled
Abstract: No abstract text available
Text: P R S ILD Q ilD liO A H V in t e J 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles
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28F008SA
64-Kbyte
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION 28F008SA 8 MBIT 1 MBIT x 8 FLASHFILE MEMORY High-Density Sym m etrically Blocked Architecture — Sixteen 64 KByte Blocks • Very High-Performance Read — 85/90/120 ns Maximum Access Time ■ SRAM-Com patible W rite Interface Extended Cycling Capability
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28F008SA
40-Lead
44-Lead
Flas008SA
E28F008SA-85
E28F008SA-90
E28F008SA-120
F28F008SA-85
F28F008SA-90
F28F008S
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Untitled
Abstract: No abstract text available
Text: in te i 0 M F @ fà G $ A 7 0 M 28F008SA-L 8-MBIT (1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voitage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles
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28F008SA-L
44-Lead
64-Kbyte
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28F008SA
Abstract: E28F008SA E0000 SmartDie TB28F008SA
Text: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F008SA x8 n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip Automated Byte Write and Block Erase
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28F008SA
64-Kbyte
40-Lead
44-Lead
28F008SA
AP-625
28F008SC
28F008
AP-359
E28F008SA
E0000
SmartDie
TB28F008SA
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28F008SAT
Abstract: No abstract text available
Text: inU PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles
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28F008SA
64-Kbyte
40-Lead
44-Lead
28F008S
AP-364
28F008SAT
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6361A
Abstract: No abstract text available
Text: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation
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28F008SA-L
64-Kbyte
44-Lead
6361A
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Untitled
Abstract: No abstract text available
Text: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time
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28F008SA
64-Kbyte
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Untitled
Abstract: No abstract text available
Text: 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications Included • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles
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28F008SA
64-Kbyte
Transitions53
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28F008SA
Abstract: No abstract text available
Text: 5 VOLT FlashFile MEMORY 28F008SA x8 • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip ■ ■ Automated Byte Write and Block Erase
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28F008SA
64-Kbyte
40-Lead
44-Lead
28F004S5,
28F008S5,
28F016S
28F004S3,
28F008S3,
28F008SA
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Untitled
Abstract: No abstract text available
Text: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase
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28F008SA-L
64-Kbyte
-40-L
AP-360
25F008SA
AP-364
28F008SA
ER-27
ER-28
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Untitled
Abstract: No abstract text available
Text: Â P M ftK K S S 0 M F ^ 5 M Y 0 ö [M in te i 28F008SA-L 8 MBIT (1 MBIT x 8) FLASH MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Deep-Powerdown Mode — 0.20 f iA Ice Typical
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28F008SA-L
44-Lead
E28F008SA-L200
F28F008SA-L200
PA28F008SA-L200
28F008SA
AP-359
AP-360
25F008SA
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82360SL
Abstract: 29042
Text: in t e ! 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included u High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks • Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase
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28F008SA
64-Kbyte
40-Lead
44-Lead
82360SL
29042
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION 28F008SA-L 8 MBIT 1 MBIT x 8 FLASHFILE MEMORY H ig h -D e n s ity S y m m e trica lly B locked A rch itectu re — S ixteen 64 K B yte B locks L o w -V o ltag e O p eratio n — 3.3V ± 0.3V or 5.0V ± 10% V cc • H ig h -P erfo rm a n ce Read
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28F008SA-L
E28F008SA-L200
F28F008SA-L200
E28F008SA-L250
F28F008SA-L250
PA28F008SA-L200
PA28F008SA-L250
AP-359
AP-360
ER-27
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E28F008SA-120
Abstract: E28F008SA 28F008SA
Text: • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip n Automated Byte Write and Block Erase — Command User Interface — Status Register
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64-Kbyte
40-Lead
44-Lead
28F008SA
AP-627
AP-625
28F008Sc
AP-359
E28F008SA-120
E28F008SA
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Untitled
Abstract: No abstract text available
Text: in t e i A O W A t M ! D M F @ I^ ß iflÄ ¥ D fiO 28F008SA-L 8-MBIT (1 MBIT x 8 FLASH FI LETM MEMORY • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc ■ Extended Cycling Capability
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28F008SA-L
64-Kbyte
ebl75
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SmartDie
Abstract: 271296 ALi Corporation M1431
Text: in te i 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase
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28F008SA-L
64-Kbyte
40-Lead
44-Lead
150ns
4fl2bl75
SmartDie
271296
ALi Corporation
M1431
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