L055
Abstract: EPCOS 800 395 l0551 1180.500 Pspice metal oxide varistor LS50k550p EPCOS 500 04
Text: Strap Varistors HighE Series Construction • Round varistor element ■ Coating: epoxy resin, flame-retardant to UL 94 V-0 ■ Bolt-holed strap terminals for screw fixing or soldering Features ■ Maximum load capacity with minimum size ■ PSpice models
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Untitled
Abstract: No abstract text available
Text: SQM120P06-07L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQM120P06-07L
AN609,
9849m
6223m
9204m
4724m
9881m
0872m
9552m
1310m
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14755
Abstract: 4936 AN609 Si7212DN
Text: Si7212DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7212DN
AN609
22-Mar-07
14755
4936
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SUM90N08
Abstract: AN609
Text: SUM90N08-4m8P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUM90N08-4m8P
AN609
08-Nov-07
SUM90N08
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transistor 5478
Abstract: C 5478 AN609 SUP57N20-33 80145
Text: SUP57N20-33_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUP57N20-33
AN609
19-Dec-07
transistor 5478
C 5478
80145
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Untitled
Abstract: No abstract text available
Text: Si2318CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si2318CDS
AN609,
9368u
0110m
3462m
6629u
2010u
2716m
4579m
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Untitled
Abstract: No abstract text available
Text: SQ1421EEH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQ1421EEH
AN609,
5080u
3530u
0983m
2441m
6764m
9102m
8004m
16-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQM120P04-04L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQM120P04-04L
AN609,
7477m
9488m
5365m
7670m
9881m
1258m
9552m
4116m
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AN609
Abstract: Si7214DN 87016
Text: Si7214DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7214DN
AN609
21-Mar-07
87016
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W 1.4852
Abstract: 9952 9962 mosfet AN609
Text: Si5441BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5441BDC
AN609
12-Jun-07
W 1.4852
9952
9962 mosfet
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AN609
Abstract: Si7232DN 1756-001 16848 957-1000
Text: Si7232DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,
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Si7232DN
AN609,
21-Oct-08
AN609
1756-001
16848
957-1000
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8843
Abstract: AN609 Si5402BDC
Text: Si5402BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5402BDC
AN609
12-Jun-07
8843
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sihg20n50
Abstract: No abstract text available
Text: SiHG20N50C_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiHG20N50C
AN609,
18-Nov-10
1689m
6786m
9213m
2111m
2758m
3247m
sihg20n50
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mosfet 4800
Abstract: 7647 4800 mosfet AN609
Text: SUP60N02-4m5P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUP60N02-4m5P
AN609
19-Dec-07
mosfet 4800
7647
4800 mosfet
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9327
Abstract: AN609 Si4927DY
Text: Si4927DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4927DY
AN609
12-Jun-07
9327
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SI2312cDS
Abstract: AN609
Text: Si2312CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si2312CDS
AN609,
02-Mar-10
AN609
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7647
Abstract: mosfet 4800 4800 mosfet AN609
Text: SUM60N02-3m9P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUM60N02-3m9P
AN609
12-Dec-07
7647
mosfet 4800
4800 mosfet
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si7210
Abstract: AN609 87016
Text: Si7210DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7210DN
AN609
13-Jan-06
si7210
87016
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AN609
Abstract: 957-1000
Text: Si7228DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si7228DN
AN609,
17-Mar-09
AN609
957-1000
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Untitled
Abstract: No abstract text available
Text: SQJ910AEP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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SQJ910AEP
AN609,
4283m
4192u
2484m
4377m
0537m
9362m
5220u
21-Jun-13
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7495 datasheet
Abstract: 7495 4413 AN609
Text: SiR172DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiR172DP
AN609,
21-Sep-09
7495 datasheet
7495
4413
AN609
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C 5478
Abstract: AN609 SUP40N25-60
Text: SUP40N25-60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUP40N25-60
AN609
19-Dec-07
C 5478
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9952
Abstract: 12460 AN609 Si5445BDC
Text: Si5445BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5445BDC
AN609
12-Jun-07
9952
12460
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AN609
Abstract: 74825
Text: Si7218DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7218DN
AN609
20-Jul-07
74825
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