SIOV-S20K275
Abstract: IC Datenbuch spice modelle GER-A siemens datenbuch varistor 400V pspice
Text: Manfred Holzer ● Willi Zapsky Varistormodell für PSpice: Simulieren geht über Probieren Ls Cp V=f I Bild 1 Grundstruktur des Varistormodells für die Simulation mit PSpice te Eingabe eines Stromlaufplans aufbereiten. Eines dieser Programme ist »PSpice
|
Original
|
|
PDF
|
resistor parasitic capacitance
Abstract: vcc2895 motorola ECL RB433 "motorola ecl" .h116 H1052 T06B1 motorola LOGIC H188
Text: AN1578 Application Note MECL 10H SPICE Kit for Berkeley SPICE PSPICE Prepared by Andrea Diermeier Cleon Petty Motorola Logic Applications Engineering MECL 10H is a trademark of Motorola, Inc. 9/96 Motorola, Inc. 1996 1 REV 0 AN1578 MECL 10H SPICE Kit for Berkeley SPICE (PSPICE)
|
Original
|
AN1578
10HTM
890MV,
1750MV,
1295MV,
MC10H
AN1578/D*
AN1578/D
DL140
resistor parasitic capacitance
vcc2895
motorola ECL
RB433
"motorola ecl"
.h116
H1052
T06B1
motorola LOGIC
H188
|
PDF
|
RFD8P06LESM9A
Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model
|
Original
|
RFD8P06LE,
RFD8P06LESM,
RFP8P06LE
TA49203.
175oC
RFD8P06LESM9A
m041
mosfet motor dc 48v
Logic Level p-Channel Power MOSFET
RFD8P06LE
RFD8P06LESM
RFP8P06LE
08E4
30e2
|
PDF
|
40V 60A MOSFET
Abstract: RFG60P05E TB334
Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve
|
Original
|
RFG60P05E
O-247
175oC
TB334
40V 60A MOSFET
RFG60P05E
TB334
|
PDF
|
RFG60P05E
Abstract: TB334
Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve
|
Original
|
RFG60P05E
O-247
175oC
TB334
RFG60P05E
TB334
|
PDF
|
3055L
Abstract: TD 8145 AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334
Text: RFT3055LE Data Sheet August 1999 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET • 2.0A, 60V • rDS ON = 0.150Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve
|
Original
|
RFT3055LE
TA49158.
TB334,
OT-223
3055L
TD 8145
AN7254
AN7260
AN9321
AN9322
RFT3055LE
TB334
|
PDF
|
50V 60A MOSFET
Abstract: RFG60P05E 124E-12
Text: RFG60P05E S E M I C O N D U C T O R 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 60A, 50V JEDEC STYLE TO-247 • rDS ON = 0.030Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model
|
Original
|
RFG60P05E
O-247
175oC
RFG60P05E
15e-10
1e-30
42e-4
85e-3
69e-6)
50V 60A MOSFET
124E-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUF76131SK8 Data Sheet September 1999 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 10A, 30V • Ultra Low On-Resistance, rDS ON = 0.013Ω • Temperature Compensating PSPICE Model • Thermal Impedance SPICE Model
|
Original
|
HUF76131SK8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUFA75631SK8 TM Data Sheet November 2000 File Number 4959 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models
|
Original
|
HUFA75631SK8
MS-012AA
HUFA75631SK8
MS-012AA
75631SK8
|
PDF
|
ta7610
Abstract: TA761 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Text: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models
|
Original
|
HUF76105SK8
TA76105.
TB334,
MS-012AA
ta7610
TA761
AN7254
AN9321
AN9322
HUF76105SK8
HUF76105SK8T
MS-012AA
TB334
|
PDF
|
f3055l
Abstract: f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE
Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs • 11A, 60V Formerly developmental type TA49158. • rDS ON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve
|
Original
|
RFD3055LE,
RFD3055LESM,
RFP3055LE
TA49158.
TB334
f3055l
f3055
FP3055LE
f3055l datasheet
AN9322
Fp3055
RFP3055LE
datasheet fp3055le
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V
RFD3055LE
|
PDF
|
RFD8P06E
Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06
Text: RFD8P06E, RFD8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model
|
Original
|
RFD8P06E,
RFD8P06ESM,
RFP8P06E
O-220AB
O-251AA
RFD8P06ESM
RFP8P06E
49e-10
1e-30
RFD8P06E
RFD8P06ESM9A
IS415
BV202
D8P06
|
PDF
|
RFG60P06E
Abstract: No abstract text available
Text: RFG60P06E S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET January 1996 Features Package • 60A, 60V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model
|
Original
|
RFG60P06E
O-247
175oC
RFG60P06E
11e-1
34e-3
46e-12)
15e-10
1e-30
|
PDF
|
FD3055
Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve
|
Original
|
RFD3055,
RFD3055SM,
RFP3055
TA49082.
175oC
TB334
FD3055
Fp3055
IS433
4078 relay
RFP3055
TB334
AN7254
RFD3055
RFD3055SM
RFD3055SM9A
|
PDF
|
|
65e9
Abstract: irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334
Text: IRFP150N TM Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
|
Original
|
IRFP150N
O-247
65e9
irfp150n
IRFP150N equivalent
AN7254
AN7260
AN9321
AN9322
TB334
|
PDF
|
D15P05
Abstract: RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334
Text: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 50V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve
|
Original
|
RFD15P05,
RFD15P05SM,
RFP15P05
TA09833.
TB334
D15P05
RFP15P05
RFD15P05
RFD15P05SM
RFD15P05SM9A
TB334
|
PDF
|
AN9321
Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334 Intersil application notes
Text: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2836.4 • 3A, 80V • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve
|
Original
|
RFD3N08L,
RFD3N08LSM
175oC
TB334
TA09922.
RFD3N08L
RFD3N08LSM
AN9321
AN9322
RFD3N08LSM9A
TB334
Intersil application notes
|
PDF
|
AN7254
Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Text: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models
|
Original
|
HUF76132SK8
TB334,
TA76131.
MS-012AA
AN7254
AN9321
AN9322
HUF76132SK8
HUF76132SK8T
MS-012AA
TB334
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF530 TM Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance - rDS ON = 0.064Ω, VGS = 10V SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER
|
Original
|
IRF530
O-220AB
IRF530
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RFT1P06E HARRIS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Description Features 1.4A, 60V rDS ON = 0-285i2 2kV ESD Protected Temperature Compensating PSPICE Model SPICE Thermal Model These products are
|
OCR Scan
|
RFT1P06E
0-285i2
1-800-4-HARRIS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated
|
OCR Scan
|
RFG60P05E
O-247
11e-1
34e-3TRS2
46e-12)
15e-10
1e-30
42e-4
85e-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RFD14N06, RFD14N06SM, RFP14N06 HARRIS r^ o V o V ^ 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Ju n e 1995 Packaging Features JEDEC T0-220AB • 14A, 60V • rDS(ON) SOURCE = 0.100i2 • Temperature Compensating PSPICE Model
|
OCR Scan
|
RFD14N06,
RFD14N06SM,
RFP14N06
T0-220AB
100i2
O-251AA
1-800-4-HARRIS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: J W S S em icon du cto r RFG45N06LE, RFP45N06LE, RF1S45N06LESM I Data Sheet April 1999 45A, 60V, 0.028 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs • 45A, 60V Formerly developmental type TA49177. • rDS ON = 0.028i2 • 2kV ESD Protected • Temperature Compensating PSPICE Model
|
OCR Scan
|
RFG45N06LE,
RFP45N06LE,
RF1S45N06LESM
TA49177.
028i2
TB334
94e-4
94e-7)
70e-3
17e-5)
|
PDF
|
76139s
Abstract: 76139p HUF76139P3 76139
Text: ASSESS? HUF76139P3, HUF76139S3, HUF76139S3S 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 75A,30V • Ultra Low On-Resistance, ros ON = 0.0075£2 • Temperature Compensating PSPICE Model
|
OCR Scan
|
HUF76139P3,
HUF76139S3,
HUF76139S3S
TB334,
O-263AB
O-263AB
76139s
76139p
HUF76139P3
76139
|
PDF
|