AN525
Abstract: BC327-25 SMD AN500-x smd diode S4 6E Zener Diode 1b8 PGKE AUSTRIA MIKRO SYSTEME INTERNATIONAL handsfree chip Application Notes AN500-x AS2525
Text: Preliminary Application Note AN525 Austria Mikro Systeme International AG Application Note AN525: AS2525,AS2591 Single Chip Handsfree Phone +16 digit LCD driver demo board 1. Scope This application note describes operation and features of the AS2525 Single Chip handsfree telephone and
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Original
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AN525
AN525:
AS2525
AS2591
AS2591
AN525
AS252x
/AN525
BC327-25 SMD
AN500-x
smd diode S4 6E
Zener Diode 1b8
PGKE
AUSTRIA MIKRO SYSTEME INTERNATIONAL
handsfree chip
Application Notes AN500-x
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PDF
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piher spain
Abstract: pt 10 lh 10K 10k spdt potentiometer PTC153 piher spain potentiometer PTC-10V thumbwheel Potentiometers PT-10 PTC-15 low torque potentiometer
Text: PTC-10 10 mm Cermet Potentiometer FEATURES – – – – – MECHANICAL SPECIFICATIONS Cermet resistive element. Dust proof enclosure. Plastic material according to UL94V-0 Alumina substrate. Also upon request: Wiper positioned at 50% or fully clockwise.
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Original
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PTC-10
UL94V-0
PT-10,
PT-15,
PTC-15
PT/PTC-15
PT/PTC-10
piher spain
pt 10 lh 10K
10k spdt potentiometer
PTC153
piher spain potentiometer
PTC-10V
thumbwheel Potentiometers
PT-10
PTC-15
low torque potentiometer
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PDF
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PTC 10k
Abstract: pt 10 lh 10K
Text: PT-10 10 mm Carbon Potentiometer FEATURES – – – – MECHANICAL SPECIFICATIONS Carbon resistive element Dust proof enclosure Polyester substrate Also upon request: Wiper positioned at 50% or fully clockwise. Supplied in magazines for automatic insertion.
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PT-10
PTC-15
PT/PTC-10
PT/PTC-15
PTC 10k
pt 10 lh 10K
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Untitled
Abstract: No abstract text available
Text: ES M A « FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A ,250V ,rDS ON = 0.610n The Discrete Products Operation of Harris Semiconductor has developed a series o1 Radiation Hardened MOSFETs
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OCR Scan
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FSL234D,
FSL234R
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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10496RL
Abstract: OWTC
Text: Integrated Device Technology, Inc. PRELIMINARY IDT10496RL IDT100496RL IDT101496RL SELF-TIMED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT STRAM FEATURES: • 16,384-wonds x 4-bit organization • Self-Timed, with registers on inputs and latches on outputs • Balanced Read/Write cycle time: 10/12/15 ns
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IDT10496RL
IDT100496RL
IDT101496RL
384-wonds
IDT10496RL,
IDT101496RL
536-bit
ECL-10K
ECL-100K
10496RL
OWTC
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PDF
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LM101
Abstract: m101a LM201N A2201 LM101N LM201 equivalent M301AN lm201at LH2101AF LM 101
Text: L M 101 /A/201 /A /301 /A , LH2101 A/2201 A/2301 A -F,N ,N -14,T DESCRIPTION T h e LM101, LM201, LM 101A, LM 201A, and LM 301A are h ig h p e rfo rm a n ce o p e ra tio n a l a m p lifie rs fe a tu rin g hig h ga in , s h o rt c irc u it p ro te c tio n , s im p lifie d c o m pensa tion and
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OCR Scan
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/A/201
LH2101
LM101,
LM201,
LH2101A,
LH2201A,
LM101
m101a
LM201N
A2201
LM101N
LM201 equivalent
M301AN
lm201at
LH2101AF
LM 101
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ9055D, FSJ9055R HARRIS SEMICONDUCTOR 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, Tqs ON ~ 0.029S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSJ9055D,
FSJ9055R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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GAL20V8
Abstract: gal20v8 application
Text: rZ Z S C S -T H O M S O N * 7 # RjflD^iIUiOT OîOD®i GAL20V 8 E2CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — Guaranteed 100% Yields ■ HIGH PERFORMANCE E*CMOS TECHNOLOGY
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OCR Scan
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GAL20V
90f70mA
45/35mA
24-pin
LC9000
GAL20V8
gal20v8 application
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rDS 0N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for comm ercial and m ilitary space
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OCR Scan
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FSJ260D,
FSJ260R
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: SS FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A ,500V,rDS ON = 2.50£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSL430D,
FSL430R
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: S HARfiSS FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June1998 Features r D S O N —0.600ft • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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OCR Scan
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FSF450D,
FSF450R
e1998
600ft
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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diode PJ 65 MG
Abstract: 5a 12v regula
Text: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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460i2
FSL230D,
FSL230R
MIL-STD-750,
MIL-S-19500,
500ms;
diode PJ 65 MG
5a 12v regula
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSJ160D,
FSJ160R
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: W A R D 'S FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, Fd S ON = 2.70S1 The Discrete Products O peration of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSS430D,
FSS430R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 1M 256Kx 4-BIT SRAM PRELIMINARY IDT10514 IDT100514 IDT101514 FEATURES: DESCRIPTION: • • • • • • • The IDT10 5 1 4 ,1DT100514 and IDT101514 are 1,048,576bit high-speed BiCEMOS ECL static random access memo
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OCR Scan
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256Kx
144-words
IDT10514
IDT100514
IDT101514
IDT10
1DT100514
IDT101514
576bit
256Kx4,
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PDF
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Untitled
Abstract: No abstract text available
Text: FSS9130D, FSS9130R FR HARRIS S E M I C O N D U C T O R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 6A, -100V, rQg oN = 0«660il The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSS9130D,
FSS9130R
-100V,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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5a 12v regula
Abstract: No abstract text available
Text: FSL9130D, FSL9130R HARRIS S E M I C O N D U C T O R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • Description 5A, -100V, roS ON = 0,68012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event
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OCR Scan
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FSL9130D,
FSL9130R
-100V,
MIL-S-19500,
MIL-STD-750,
100ms;
500ms;
5a 12v regula
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PDF
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250JIS
Abstract: No abstract text available
Text: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs
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OCR Scan
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FSF254D,
FSF254R
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
250JIS
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PDF
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Untitled
Abstract: No abstract text available
Text: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli
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OCR Scan
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FSS234D,
FSS234R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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T218N
Abstract: aeg tt 18 n 1200 T218 AEG T 51 N 1200
Text: 0 0 2 9 4 2 6 A E G CORP ' fil DE | □ □ S ti4 E t. D 0 0 b l4 E □ | T218N Typenreihe/Type ränge_T218N Elektrische Eigenschaften 400 * 600 800 1000 1100 1200 1400 1600 Electrical properties Höchstzulässige Werte U d r m i U r r m Periodische Vorwärts-und
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OCR Scan
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D00bl4E
T218N
T218N
aeg tt 18 n 1200
T218
AEG T 51 N 1200
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PDF
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ifr 150 mosfet
Abstract: No abstract text available
Text: ¡ f i H R R U U S E M I C O N D U C T O R FSL913AOD, FSL913AOR I S 7 A , -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • 7A, -100V, Description = 0.300U • Total Dose - Meets Pre-RAD Specifications to 100K RAD Si
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OCR Scan
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FSL913AOD,
FSL913AOR
-100V,
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
500ms;
ifr 150 mosfet
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PDF
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SL13A
Abstract: No abstract text available
Text: FSL 13A O D , H A R R IS S E M I C O N D U C T O R F SL 13A O R 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 9 A , 1 0 0 V , Tq s O N = 0.1 s o n The Discrete Products Operation of Harris Semiconductor
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OCR Scan
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MIL-STD-750,
MIL-S-19500,
500ms;
SL13A
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 3 W A R F ? FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, r DS ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL130D,
FSL130R
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL9110D,
FSL9110R
-100V,
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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