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    PTB 20148 Search Results

    PTB 20148 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EPL2014-821MLB Coilcraft Inc General Purpose Inductor, 0.82uH, 20%, 1 Element, Ferrite-Core, SMD, 0808, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    SER2014-801MLB Coilcraft Inc General Purpose Inductor, 0.8uH, 20%, 1 Element, Ferrite-Core, SMD, 7674, ROHS COMPLIANT Visit Coilcraft Inc
    EPL2014-822ML Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS Visit Coilcraft Inc
    EPL2014-821ML Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS Visit Coilcraft Inc
    EPL2014-821 Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS Visit Coilcraft Inc

    PTB 20148 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTB 20148 Ericsson Components BJT, NPN, RF Power Transistor, IC 8A Original PDF
    PTB20148 Ericsson Components 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Original PDF

    PTB 20148 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR 955 E

    Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
    Text: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP


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    1-877-GOLDMOS 1301-PTB TRANSISTOR 955 E PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor PDF

    CERBERUS ocds TC1797

    Abstract: SSC 9101 TC1797 multican testmode stcon flash micro ALPHA 1077 APA
    Text: 32-Bit TC1797 32-Bit Single-Chip Microcontroller User’s Manual V1.1 2009-05 Microcontrollers Edition 2009-05 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


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    32-Bit TC1797 32-Bit CERBERUS ocds TC1797 SSC 9101 TC1797 multican testmode stcon flash micro ALPHA 1077 APA PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ Contents PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB 20003. 7-53 20004. 7-23


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    Untitled

    Abstract: No abstract text available
    Text: ERICSSON s PTB 20148 60 Watts, 925 - 960 MHz Cellular Radio RF Power Transistor Key Features Description The 20148 Is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 925 960 MHz frequency band. It is rated at 60 Watts minimum


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    200mA PDF

    lc 945 p transistor NPN TO 92

    Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
    Text: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.


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    lc 945 transistor

    Abstract: transistor LC 945 TRANSISTOR 955 E 965 transistor 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: ERICSSON $ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP


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    930test) lc 945 transistor transistor LC 945 TRANSISTOR 955 E 965 transistor 35 W 960 MHz RF POWER TRANSISTOR NPN PDF