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    PTB 20200 Search Results

    PTB 20200 Result Highlights (5)

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    5962-92202-000 Renesas Electronics Corporation Dual 1-4 Decoder 54FCT139T Visit Renesas Electronics Corporation
    DA7202-00UH2 Renesas Electronics Corporation 10W Mono Class D Amplifier for 2S Battery-Operated Portable Devices Visit Renesas Electronics Corporation
    HI2-0200/883 Renesas Electronics Corporation Dual SPDT CMOS Analog Switch, CAN, /Tray Visit Renesas Electronics Corporation
    7MPV6202-000 Renesas Electronics Corporation SRAM MODULE Visit Renesas Electronics Corporation
    51700-10202002AALF Amphenol Communications Solutions PwrBlade®, Power Connectors, 2P 20S 2P Vertical Header, Solder To Board Visit Amphenol Communications Solutions
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    PTB 20200 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTB20200 Ericsson 30 watts, 380-500 MHz RF power transistor Original PDF
    PTB20200 Ericsson 30 Watts, 380-500 MHz RF Power Transistor Original PDF
    PTB 20200 Ericsson Components BJT, NPN, RF Power Transistor, IC 6.7A Original PDF

    PTB 20200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PTB 20200

    Abstract: No abstract text available
    Text: e PTB 20200 30 Watts, 380–500 MHz RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380–500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB PTB 20200 PDF

    PTB 20200

    Abstract: No abstract text available
    Text: e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier


    Original     		1-877-GOLDMOS 1301-PTB PTB 20200 PDF

    TRANSISTOR 955 E

    Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
    Text: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB TRANSISTOR 955 E PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor PDF

    9434

    Abstract: PTB 20200 PTB 20171 transistor b 1166 transistor 9350
    Text: e PTB 20171 25 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB 9434 PTB 20200 PTB 20171 transistor b 1166 transistor 9350 PDF

    9434

    Abstract: PTB 20004
    Text: e PTB 20004 50 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for


    Original     		1-877-GOLDMOS 1301-PTB 9434 PTB 20004 PDF

    Ericsson RF POWER TRANSISTOR

    Abstract: No abstract text available
    Text: e PTB 20038 25 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20038 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for


    Original     		1-877-GOLDMOS 1301-PTB Ericsson RF POWER TRANSISTOR PDF

    PTB 20053

    Abstract: PTB 20200
    Text: e PTB 20053 60 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20053 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB PTB 20053 PTB 20200 PDF

    transistor A 935

    Abstract: No abstract text available
    Text: e PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for


    Original     		1-877-GOLDMOS 1301-PTB transistor A 935 PDF

    20097

    Abstract: 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: e PTB 20097 40 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for


    Original     		1-877-GOLDMOS 1301-PTB 20097 35 W 960 MHz RF POWER TRANSISTOR NPN PDF

    20031

    Abstract: 9434
    Text: e PTB 20031 40 Watts, 420–470 MHz RF Power Transistor Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB 20031 9434 PDF

    pin diagram of RS 485

    Abstract: 3 Pin Screw Terminal Block Connector 850E
    Text: Extract from the online catalog PSI-MOS-RS422/FO 850 E Order No.: 2708355 FO converter with integrated optical diagnosis, alarm contact, for RS-422/RS-485 4-wire/ INTERBUS to 2 Mbps, terminal equipment


    Original     		PSI-MOS-RS422/FO RS-422/RS-485 IF-2009) pin diagram of RS 485 3 Pin Screw Terminal Block Connector 850E PDF

    iic to RS-232 converter

    Abstract: 9 pin diagram of RS 232 connector PTB 06 ATEX 2042 U
    Text: Extract from the online catalog PSI-MOS-RS232/FO 850 E Order No.: 2708371 FO converter with integrated optical diagnosis, alarm contact, for RS-232 interfaces up to 115.2 kbps, terminal equipment with an FO


    Original     		PSI-MOS-RS232/FO RS-232 IF-2009) iic to RS-232 converter 9 pin diagram of RS 232 connector PTB 06 ATEX 2042 U PDF

    resistor smd 470

    Abstract: PTH08T210WAZT PTH08T210WAD
    Text: PTH08T210W www.ti.com SLTS262A – OCTOBER 2005 – REVISED NOVEMBER 2005 30-A, 5.5-V to 14-V INPUT, NON-ISOLATED, WIDE OUTPUT ADJUST, POWER MODULE w/TurboTrans FEATURES • • • • • • • • • • Up to 30-A Output Current 5.5-V to 14-V Input Voltage


    Original     		PTH08T210W SLTS262A EN60950 resistor smd 470 PTH08T210WAZT PTH08T210WAD PDF

    Untitled

    Abstract: No abstract text available
    Text: PTH05T210W www.ti.com . SLTS263I – AUGUST 2007 – REVISED MARCH 2009 30-A, 5-V INPUT, NON-ISOLATED, WIDE OUTPUT ADJUST, POWER MODULE w/ TURBOTRANS


    Original     		PTH05T210W SLTS263I PDF

    TRANSISTOR SMD MARKING CODE fk

    Abstract: PTH08T210W PTH08T210WAD PTH08T210WAS PTH08T210WAZ TMS320 6PTB477MD8TER
    Text: PTH08T210W www.ti.com SLTS262B – OCTOBER 2005 – REVISED NOVEMBER 2005 30-A, 5.5-V to 14-V INPUT, NON-ISOLATED, WIDE OUTPUT ADJUST, POWER MODULE w/TurboTrans FEATURES • • • • • • • • • • • Up to 30-A Output Current 5.5-V to 14-V Input Voltage


    Original     		PTH08T210W SLTS262B EN60950 TRANSISTOR SMD MARKING CODE fk PTH08T210W PTH08T210WAD PTH08T210WAS PTH08T210WAZ TMS320 6PTB477MD8TER PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ Contents PTB 20030. 5-7 PTB 20031 . 5-15 PTB 20200. 5-11


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20200 30 Watts, 450 - 490 MHz Cellular Radio RF Power Transistor Preliminary Description Key Features The 20200 is a class AB, NPN, common emitter RF Power Transistor intended for 24 V D C operation across the 450-490 MHz frequency band. It is rated at 30 Watts minimum output


    OCR Scan     		150mA PDF

    PTB 20200

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20031 40 Watts, 420 - 470 MHz Cellular Radio RF Power Transistor Description Key Features The 20031 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 420470 MHz frequency band. It is rated at 40 Watts minimum


    OCR Scan     		200mA PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ 20167 60 Watts, 850 - 960 MHz RF Power Transistor Preliminary PTB Key Features Description The 20167 is a NPN, common base RF Power Transistor in­ tended for 24 VDC operation across the 850 - 960 MHz frequency band. It is rated at 60 Watts minimum output power and may be


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor D escription The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 38 0 -5 0 0 MHz. Rated at 30 watts m inim um outp ut power, it m ay be used fo r both CW and PEP


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20038 25 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20038 is a class AB, NPN, common emitter R F power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for


    OCR Scan     		PDF

    lc 945 transistor

    Abstract: transistor LC 945 TRANSISTOR 955 E 965 transistor 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: ERICSSON $ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		930test) lc 945 transistor transistor LC 945 TRANSISTOR 955 E 965 transistor 35 W 960 MHz RF POWER TRANSISTOR NPN PDF

    transistor b 1166

    Abstract: IC 935 947 transistor
    Text: ERICSSON ^ P TI R o n i7 l D ¿ U 1 f i Preliminary r 25 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor Key Features Description The 20171 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935 - 960


    OCR Scan     		150mA transistor b 1166 IC 935 947 transistor PDF