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    d 417 transistor

    Abstract: No abstract text available
    Text: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211001E PTFA211001F 100-watt, PTFA211001F* d 417 transistor

    PTFA211001E

    Abstract: No abstract text available
    Text: Product Brief PTFA211001E PTFA211001F WCDMA RF Power FET The PTFA211001E and PTFA211001F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211001E and


    Original     		PDF PTFA211001E PTFA211001F PTFA211001E PTFA211001F B134-H8498-X-0-7600

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PTFA211001E PTFA211001F Thermally Enhanced High Power RF LDMOS FETs 100 W, 2110–2170 MHz Description Features The PTFA211001E and PTFA211001F are thermally enhanced an internally matched 100-watt GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally enhanced packaging


    Original     		PDF PTFA211001E PTFA211001F 100-watt