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    ams OSRAM Group BP 103-3/4

    Phototransistors PHOTODIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BP 103-3/4 1,965
    • 1 $2.52
    • 10 $1.68
    • 100 $1.3
    • 1000 $0.997
    • 10000 $0.927
    		Buy Now

    ams OSRAM Group Q62702P3577

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics Q62702P3577 2,000
    • 1 -
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    • 1000 -
    • 10000 $0.865
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    TTI Q62702P3577 Bulk 2,000
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    • 10000 $0.82
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    Q62702P3577 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Q62702-P3577 Infineon Technologies Phototransistor, Silicon NPN Phototransistor Original PDF

    Q62702P3577 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GET06017

    Abstract: Q62702-P3577 Q62702-P75 Q62702-P79-S2 Q62702-P79-S4 BP 103-3
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß Features • Especially suitable for applications from


    Original     		PDF ICEO/ICEO25° GET06017 GET06017 Q62702-P3577 Q62702-P75 Q62702-P79-S2 Q62702-P79-S4 BP 103-3

    TRANSISTOR SMD MARKING CODE 3401

    Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
    Text: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111


    Original     		PDF GEMY6050 TRANSISTOR SMD MARKING CODE 3401 Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62

    Bpy 43

    Abstract: BP 103-3 SFH 225 FA BPX 43-3/4 SFH 309-3/4
    Text: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 4. Fototransistoren 4. Phototransistors TA = 25 °C Package TA = 25 °C Type ϕ Radiant sensitive area deg. mm2 IPCE λ = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V VCEO λ10% mA V nm tr,tf (IC = 1 mA, VCC = 5 V, RL = 1 kΩ)


    Original     		PDF Q62702-P3595 Q62702-P3593 Q62702-P999 Q62702-P3594 Q6270 Q62702-P1677 Q62702-1129 Q62702-P216 Q62702-P956 Q62702-P1671 Bpy 43 BP 103-3 SFH 225 FA BPX 43-3/4 SFH 309-3/4

    BP 103-3

    Abstract: No abstract text available
    Text: 2008-10-28 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Lead Pb Free Product - RoHS Compliant BP 103 Applications • • • • Anwendungen Photointerrupters Industrial electronics For control and drive circuits Computer-controlled flashes •


    Original     		PDF x00E4 x03BB] Q62702P0075 Q62702P3577 x00FC x00F6 BP 103-3

    STR G 8654

    Abstract: A673 transistor transistor A673 transistor Bu 45080 TT 2188 mx 362-0 TRANSISTOR SMD MARKING CODE 3401 diode BZW 70-20 sfh 202 diode 3302 81a ir receiver
    Text: Foreword Foreword Foreword Vorwort The information in this catalog is correct as of March 2011. Die Angaben in diesem Katalog entsprechen dem Stand März 2011. All products listed in this catalog are RoHS compliant, a fact that will be explicitly noted in the respective data sheet. For up-to-date


    Original     		PDF

    BP 103-3

    Abstract: No abstract text available
    Text: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 BP 103 Features: Besondere Merkmale: • Spectral range of sensitivity: typ 450 . 1100 nm • Package: Metal Can (TO-18), hermetically sealed, Epoxy • Special: Base connection


    Original     		PDF D-93055 BP 103-3

    TRANSISTOR SMD MARKING CODE 3401

    Abstract: DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code
    Text: Infrared Components ge 88 - 92 107 108 Infrared Components Summary of Types Silicon Photodetectors For moreComponents Infrared detailed product Summary information of Types andSilicon technical Photodetectors datasheets, please visit http://catalog.osram-os.com


    Original     		PDF GEXY6713 TRANSISTOR SMD MARKING CODE 3401 DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code

    fototransistor BPW 39

    Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
    Text: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.


    Original     		PDF EN60825-1 GETY6091 GPLY6899 GPLY6880 fototransistor BPW 39 fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor

    bp 103-5

    Abstract: BP 103-3 bp 103-2 200 BP
    Text: 2008-10-28 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Lead Pb Free Product - RoHS Compliant BP 103 Applications • • • • Anwendungen Photointerrupters Industrial electronics For control and drive circuits Computer-controlled flashes •


    Original     		PDF x00E4 x03BB] Q62702P0075 Q62702P3577 x00FC x00F6 bp 103-5 BP 103-3 bp 103-2 200 BP

    Q62702P0075

    Abstract: osram Phototransistor GETY6017 OHLY0598 get 103 BP 103-3
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant BP 103 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz,


    Original     		PDF

    foto transistor

    Abstract: GETY6017 Q62702-P3577 Q62702-P75 BP 103-3
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Especially suitable for applications from


    Original     		PDF Q62702-P75 Q62702-P3577 foto transistor GETY6017 Q62702-P3577 Q62702-P75 BP 103-3

    GETY6017

    Abstract: OHLY0598 Q62702P0075 BP 103-3
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant BP 103 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz,


    Original     		PDF

    BP 103-3

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß Features • Especially suitable for applications from


    Original     		PDF GETY6017 BP 103-3

    BP 103-3

    Abstract: No abstract text available
    Text: 2007-04-04 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 BP 103 Features: Besondere Merkmale: • Spectral range of sensitivity: 450 . 1100 nm • Package: Metal Can TO-18 , hermetically sealed, Epoxy • Special: Base connection • High linearity


    Original     		PDF D-93055 BP 103-3