QE 05-40 Philips
Abstract: QE 05/40 H qe05 QE 05-40 h Philips I960 QE05-40
Text: PHILIPS QE05/40F QE 05/40F QE 05/40H Vf 12,6 V If 0,625 A L, " 0 X 4 4 " Base, culot, Sockel: Octal 8-p For further data and_curves please refer to QE 05/40 Pour les autres données et courtes voir QE 05/40 Für die übrigen Daten und Kennlinien siehe QE 05/40
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05/40F
05/40H
QE05/40F
QE05/40H
QE05/40F
QE05/40H
QE 05-40 Philips
QE 05/40 H
qe05
QE 05-40 h Philips
I960
QE05-40
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T 1829-1
Abstract: QE 05-40 Philips QE 05/40 H 2x54 3371 HOV 7400 ON QE Series QE 05-40 h Philips 2X15 2x24W
Text: PHILIPS QE 05/40 BEAM POWER TETRODE for use as R.F. amplifier, oscillator and frequency multiplier and as A.F. amplifier and modulator In mobile and fixed equipment TETRODE A FAISCEAU pour utilisation en amplificatrice, oscillatrice et multlpllcatrlce de frequence H.F. et en
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QE05/40
T 1829-1
QE 05-40 Philips
QE 05/40 H
2x54
3371
HOV 7400
ON QE Series
QE 05-40 h Philips
2X15
2x24W
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Untitled
Abstract: No abstract text available
Text: S P R I N G 2 0 1 5 SCIENTIFIC CAMERAS ENABLING f. 01 f. 02 f. 03 f. 05 f. 06 f. 41 FRAME S PAC E FRAME T H E A R T of S C I E N T I F I C E X P L O R A T I O N 01 41 FRAME f. 02 f. 03 f. 05 f. 06 f. 41 01 FRAME S PAC E 41 TIME .015 13.312 X 13.312 2048 X 2048
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E2048
SCAS0106E01
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MP7002
Abstract: MP700
Text: TO SH IBA MP7002 TOSHIBA POWER MODULE MP7002 1. M AXIM UM RATINGS Ta = 25°C DIODE CHARACTERISTIC Repetitive Peak Reverse Voltage Peak One Cycle Surge Forward Current (Dl, D2, D3, D4) (50 Hz, Non-Repetitive) Forward Current Junction Temperature Storage Temperature Range
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MP7002
MP7002
MP700
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DIODE BZ
Abstract: 2-78A1A MP6759
Text: TO SH IBA MP6759 TOSHIBA GTR MODULE MOTOR CONTROL APPLICATIONS SILICON N CHANNEL IGBT MP6759 HIGH POWER SWITCHING APPLICATIONS • • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage
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MP6759
2-78A1A
DIODE BZ
2-78A1A
MP6759
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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MG50Q6ES50
961001EAA1
TjS125Â
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Untitled
Abstract: No abstract text available
Text: SN54AHCT595, SN74AHCT595 8-BIT SHIFT REGISTERS WITH 3-STATE OUTPUT REGISTERS SCLS374G – MAY 1997 – REVISED JUNE 2000 description The ’AHCT595 devices contain an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. The storage register has parallel
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SN54AHCT595,
SN74AHCT595
SCLS374G
000-V
A114-A)
A115-A)
SN54AHCT595
SN74AHCT595
SDYA012
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2SC2715
Abstract: TRANSISTOR MARKING FA
Text: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.
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2SC2715
SC-59
2SC2715
TRANSISTOR MARKING FA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSTTLs M74LS323P 8 -B IT U NIVERSA L S H IF T /S T O R A G E REGISTER DESCRIPTION The PIN CONFIGURATION TOP VIEW M 7 4L S 32 3P is a" semiconductor integrated circuit containing an 8-b it serial/parallel input/parallel ou tp ut shift register
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M74LS323P
0013Sbl
14-PIN
16-PIN
20-PIN
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U 665b
Abstract: 4 bit right left shift register ics M74LS323P
Text: MITSUBISHI LSTTLs M74LS323P 8 -B IT U NIVERSA L S H IF T /S T O R A G E REGISTER DESCRIPTION The PIN CONFIGURATION TOP VIEW M 7 4L S 32 3P is a" semiconductor integrated circuit containing an 8-b it serial/parallel input/parallel ou tp ut shift register
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M74LS323P
M74LS323P
16-PIN
20-PIN
U 665b
4 bit right left shift register ics
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Untitled
Abstract: No abstract text available
Text: PD -9.1677A International IOR Rectifier IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC10UD
O-220AB
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Untitled
Abstract: No abstract text available
Text: International ^ R e c tifie r P D - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC40K-S
C-871
S5452
DG20bbl
SMD-220
C-872
4A5S452
D020bb2
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mxic xtrarom
Abstract: No abstract text available
Text: MX25L1675E MX25L1675E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1850 1 REV. 1.0, JUL. 05, 2012 MX25L1675E Contents 1. FEATURES. 4
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MX25L1675E
PM1850
mxic xtrarom
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pin configuration of dual 7-segment led
Abstract: HEF4543BT 7-segment common cathode common cathode 14-segment display driver operation of bcd 7 segment HEF4543B HEF4543BP common cathode 7-segment display driver
Text: HEF4543B BCD to 7-segment latch/decoder/driver Rev. 05 — 27 October 2009 Product data sheet 1. General description The HEF4543B is a BCD to 7-segment latch/decoder/driver for liquid crystal and LED displays. It has four address inputs D0 to D3 , an active LOW latch enable input (LE), an
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HEF4543B
HEF4543B
pin configuration of dual 7-segment led
HEF4543BT
7-segment common cathode
common cathode 14-segment display driver
operation of bcd 7 segment
HEF4543BP
common cathode 7-segment display driver
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HEF4511BT
Abstract: hef4511bp datasheet pin configuration of dual 7-segment led HEF4511 HEF4070B HEF4511B HEF4511BP
Text: HEF4511B BCD to 7-segment latch/decoder/driver Rev. 05 — 13 August 2009 Product data sheet 1. General description The HEF4511B is a BCD to 7-segment latch/decoder/driver with four address inputs D0 to D3 , an active HIGH latch enable input (LE), an active LOW ripple blanking input
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HEF4511B
HEF4511B
HEF4511BT
hef4511bp datasheet
pin configuration of dual 7-segment led
HEF4511
HEF4070B
HEF4511BP
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SN54AS889
Abstract: No abstract text available
Text: SN54AS867, SN54AS869 SN74ALS867A, SN74ALS869, SN74AS867, SN74AS869 SYNCHRONOUS 8-BIT UP/DOWN COUNTERS _ SDAS115C - DECEMBER 1982 - REVISED JANUARY 1996 • Fully Programmable With Synchronous Counting and Loading • SN74ALS867A and AS867 Have
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SN54AS867,
SN54AS869
SN74ALS867A,
SN74ALS869,
SN74AS867,
SN74AS869
SDAS115C
SN74ALS867A
AS867
SN74ALS869
SN54AS889
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP 202 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type ^CE h 1000V 12A BUP 202 Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67078-A4401-A2 Maximum Ratings
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O-220
Q67078-A4401-A2
023SbOS
GPT05155
235bD5
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors NPN Silicon e i G i 3 1 1 E E E MMPQ2222 MMPQ2222>t ‘ Motorola Preferred Device Gl Q 1 H MAXIMUM RATINGS 1 Rating Symbol MMPQ2222 MMPQ2222A Unit v CEO 30 40 Vdc Collector-Base Voltage
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MMPQ2222
MMPQ2222A
751B--
SO-16
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SiI151ACT100
Abstract: JEDEC Package Code MS-026-AED PanelLink AN0007 SiI151A PanelLink Transmitter
Text: SiI 151A PanelLink Receiver Datasheet May 2000 Features The SiI 151A receiver uses PanelLink Digital technology to support high resolution displays up to SXGA. The SiI 151A receiver supports up to true color panels 24 bit/pixel, 16.7M colors in 1 or 2 pixels/clock mode. In
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SiI151ACT100
SiI/DS-0029-A
1-888-PanelLink
JEDEC Package Code MS-026-AED
PanelLink
AN0007
SiI151A
PanelLink Transmitter
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Ge dual photodiode
Abstract: AMIS-732128 AMIS-732256 AMIS-732512 high frequency linear cmos IMAGE SENSOR linear uv photodiode array Photodiode Array linear linear array photodiode element
Text: AMIS-732128, AMIS-732256, AMIS-732512 Data Sheet 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays 1.0 Description AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors
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AMIS-732128,
AMIS-732256,
AMIS-732512
M-20491-001
Ge dual photodiode
AMIS-732128
AMIS-732256
AMIS-732512
high frequency linear cmos IMAGE SENSOR
linear uv photodiode array
Photodiode Array linear
linear array photodiode element
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1117 S Transistor
Abstract: TOSHIBA bat Transistor b 1117
Text: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode
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GT5J311
GT5J311
30//s
1117 S Transistor
TOSHIBA bat
Transistor b 1117
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MG200Q1US51
Abstract: TV-19 tlf 106
Text: TO SHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Induetive Load • Low Saturation Voltage : VCE (Sat) = 3.6V (Max.)
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MG200Q1US51
2-109F1A
Tc-25Â
MG200Q1US51
TV-19
tlf 106
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IRG4BC10KD
Abstract: No abstract text available
Text: PD -91 73 4A International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d fo r m otor control, tsC = 1 0 js, @ 3 6 0 V V CE (start , T j = 125°C,
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IRG4BC10KD
IRG4BC10KD
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Untitled
Abstract: No abstract text available
Text: SN54AHCT595, SN74AHCT595 8-BIT SHIFT REGISTERS WITH 3-STATE OUTPUT REGISTERS SCLS374G – MAY 1997 – REVISED JUNE 2000 description The ’AHCT595 devices contain an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. The storage register has parallel
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Original
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SN54AHCT595,
SN74AHCT595
SCLS374G
000-V
A114-A)
A115-A)
SN54AHCT595
SN74AHCT595
\20000623\06222000\TXII\06222000\sn74ahct
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