Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max
|
Original
|
2SK3713
O-263
|
PDF
|
smd transistor QG
Abstract: smd transistor 26 2SK3713
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max
|
Original
|
2SK3713
O-263
smd transistor QG
smd transistor 26
2SK3713
|
PDF
|
IRHSLNA57064
Abstract: IRHSNA57064
Text: PD-94401 RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSLNA57064 60V, N-CHANNEL Product Summary Part Number IRHSLNA57064 RDS(on) 6.1mΩ QG 180nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative,
|
Original
|
PD-94401
IRHSLNA57064
180nC
IRHSLNA57064
IRHSNA57064
|
PDF
|
IRHSLNA57Z60
Abstract: IRHSNA57Z60
Text: PD-94400 RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSLNA57Z60 30V, N-CHANNEL Product Summary Part Number RDS(on) IRHSLNA57Z60 4.0mΩ QG 200nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative,
|
Original
|
PD-94400
IRHSLNA57Z60
IRHSLNA57Z60
200nC
IRHSNA57Z60
|
PDF
|
Controlled avalanche Schottky
Abstract: IRHSLNA57Z60 IRHSNA57Z60
Text: PD-94237E RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSNA57Z60 30V, N-CHANNEL Product Summary Part Number IRHSNA57Z60 RDS(on) 3.5mΩ QG 200nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative,
|
Original
|
PD-94237E
IRHSNA57Z60
200nC
N-channe01
Controlled avalanche Schottky
IRHSLNA57Z60
IRHSNA57Z60
|
PDF
|
12v DIODE schottky
Abstract: IRHSLNA57064 IRHSNA57064 MOSFET SMD-2 smd diode 15 diode schottky 809 PD-94323B
Text: PD-94323B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSNA57064 60V, N-CHANNEL Product Summary Part Number IRHSNA57064 RDS(on) 5.6mΩ QG 180nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative,
|
Original
|
PD-94323B
IRHSNA57064
180nC
N-channe01
12v DIODE schottky
IRHSLNA57064
IRHSNA57064
MOSFET SMD-2
smd diode 15
diode schottky 809
PD-94323B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification KDB15N50 FDB15N50 Features TO-263 Unit: mm +0.1 1.27-0.1 Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt +0.1 1.27-0.1 +0.2 4.57-0.2 Ruggedness Reduced Miller Capacitance and Low Input Capacitance
|
Original
|
KDB15N50
FDB15N50)
O-263
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IC IC MOSFET SMD Type Product specification KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
|
Original
|
KDS2572
|
PDF
|
68NC
Abstract: 2SK3573 transistor 42A
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3573 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 68nC TYP. VDD = 16 V, VGS = 10 V, ID = 83 A Built-in gate protection diode
|
Original
|
2SK3573
O-263
68NC
2SK3573
transistor 42A
|
PDF
|
IRHSLNA53064
Abstract: IRHSLNA54064 IRHSLNA57064 IRHSLNA58064 IRHSNA57064 Controlled avalanche Schottky
Text: PD-94401A RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSLNA57064 60V, N-CHANNEL Product Summary Part Number Radiation Level IRHSLNA57064 100K Rads (Si) IRHSLNA53064 300K Rads (Si) RDS(on) QG 6.1mΩ 160nC 6.1mΩ 160nC IRHSLNA54064 600K Rads (Si)
|
Original
|
PD-94401A
IRHSLNA57064
IRHSLNA57064
IRHSLNA53064
160nC
IRHSLNA54064
IRHSLNA58064
1000K
IRHSNA57064
Controlled avalanche Schottky
|
PDF
|
2 input and gate 24v
Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode
|
Original
|
2SK3575
O-263
2 input and gate 24v
gate drive protection
smd transistor 26
2SK3575
2SK35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors MOSFET IC SMD Type Product specification 2SK3405 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 34 nC TYP. ID = 48 A, VDD = 16V, VGS = 10 V
|
Original
|
2SK3405
O-263
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors MOSFET IC SMD Type Product specification 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode
|
Original
|
2SK3404
O-263
|
PDF
|
2SK3570
Abstract: 930 diode smd
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3570 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 23 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode
|
Original
|
2SK3570
O-263
2SK3570
930 diode smd
|
PDF
|
|
|
ja smd
Abstract: IC MOSFET QG smd diode fr
Text: IC IC SMD Type N-Channel UltraFET Trench MOSFET KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
|
Original
|
KDS2572
ja smd
IC MOSFET QG
smd diode fr
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IC IC SMD Type N-Channel Qg, Fast Switching WFETTM KI4390DY Features Extremely Low Qgd WFET Technology for Switching Losses TrenchFETTM Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TJ = 150
|
Original
|
KI4390DY
|
PDF
|
2SK3467
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode
|
Original
|
2SK3467
O-263
2SK3467
|
PDF
|
SMD 20A
Abstract: 2SK3404
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode
|
Original
|
2SK3404
O-263
SMD 20A
2SK3404
|
PDF
|
2SK3572
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3572 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 32 nC TYP. VDD = 16 V, VGS = 10 V, ID = 80 A Built-in gate protection diode +0.2
|
Original
|
2SK3572
O-263
2SK3572
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SK3295 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 QG = 16 nC TYP. ID = 35 A, VDD = 16 V, VGS = 10 V 0.1max +0.1 1.27-0.1 Surface mount device available
|
Original
|
2SK3295
O-263
|
PDF
|
2SK3405
Abstract: smd transistor nc 64
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3405 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 34 nC TYP. ID = 48 A, VDD = 16V, VGS = 10 V +0.1 0.81-0.1
|
Original
|
2SK3405
O-263
2SK3405
smd transistor nc 64
|
PDF
|
IRHSLNA57064
Abstract: IRHSNA53064 IRHSNA54064 IRHSNA57064 IRHSNA58064 RAD-HARD
Text: PD-94323C RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSNA57064 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG IRHSNA57064 100K Rads (Si) 5.6mΩ 160nC IRHSNA53064 300K Rads (Si) 5.6mΩ 160nC IRHSNA54064 600K Rads (Si) 5.6mΩ 160nC
|
Original
|
PD-94323C
IRHSNA57064
IRHSNA57064
160nC
IRHSNA53064
IRHSNA54064
IRHSNA58064
1000K
IRHSLNA57064
IRHSNA54064
RAD-HARD
|
PDF
|
2SK3574
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3574 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 22nC TYP. VDD = 24 V, VGS = 10 V, ID = 48 A Built-in gate protection diode
|
Original
|
2SK3574
O-263
2SK3574
|
PDF
|
IC MOSFET QG
Abstract: mosfet with schottky body diode mosfet Vds 30 Vgs 25 1A smd mosfet 10V Schottky Diode 78 DIODE SMD MOSFET QG
Text: IC IC SMD Type N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode KI4300DY Features TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage (MOSFET)
|
Original
|
KI4300DY
IC MOSFET QG
mosfet with schottky body diode
mosfet Vds 30 Vgs 25
1A smd mosfet
10V Schottky Diode
78 DIODE SMD
MOSFET QG
|
PDF
|
