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    QN10L12

    Abstract: QN10L IPD70N10S3L-12 IPD70N10S3L
    Text: IPD70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 11.5 mW ID 70 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD70N10S3L-12 PG-TO252-3-11 QN10L12 QN10L12 QN10L IPD70N10S3L-12 IPD70N10S3L PDF

    QN10L12

    Abstract: IPD70N10S3L-12 QN10L PG-TO252-3-11
    Text: IPD70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 11.5 mΩ ID 70 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD70N10S3L-12 PG-TO252-3-11 QN10L12 41logies QN10L12 IPD70N10S3L-12 QN10L PG-TO252-3-11 PDF