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    Untitled

    Abstract: No abstract text available
    Text: N AUER P H I L I P S / D I S CR E T E OtE D PowerMOS transistor • ~ bbSBTBl QQ14ttl 4 ■ BUZ45B r-39-i3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF QQ14ttl BUZ45B r-39-i3 T-39-13 0014bbb T-39- BUZ45B_

    la 4508 ic pin diagram

    Abstract: No abstract text available
    Text: C O S /M O S s s s - thohson D7C D I 7 1 ^ 2 3 7 j m y s U 8 I IN T E G R A T E D I C C IR C U IT - _ 7929225 N -v hcc/hcf « B « : -— J _ 41C0 8 9 7 0 T -46-Û 7-Û 9 S G S S E M IC O N D U C TO R CORP DUAL 4-BIT LATCH •


    OCR Scan     		PDF 4508B 4508B la 4508 ic pin diagram

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization


    OCR Scan     		PDF 2003S 2009S LBE2003S LBE2009S LCE2003S LCE2009S