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    DM 321

    Abstract: magnetoresistance element
    Text: SONY CORP/COMPONENT PRODS M^E D &3&R3&3 D0031b0 ^ DM-231 SO N Y . Magnetoresistance Element / *•Cq Description r DM-231 a magnetic sensor using magnétorésist­ ance effect is. composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is


    OCR Scan     		D0031b0 DM-231 150mVp-p A3fl23fi3 QQQ31b3 DM-231 T-65-05 DM 321 magnetoresistance element PDF