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    R/T3D 77 Search Results

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    GR42-6

    Abstract: 2j 103k GR43-2 GHM3145 GHM3045 rr 102k 2kv rr 681k- 1kv capacitor GRM42-6 rr 471k 1kv GRM40B103K
    Text: This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-4 This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor


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    PDF C02E-4. C02E4 C02E-4 GRM33 GRM36YGRM44-1 GRM39YGRM44-1 GRM33 GRM40-024 GR42-6 2j 103k GR43-2 GHM3145 GHM3045 rr 102k 2kv rr 681k- 1kv capacitor GRM42-6 rr 471k 1kv GRM40B103K

    GRM230Y5V475Z16

    Abstract: GR42-6 hr r 681k- 1kv GR40 MURATA HR R 221k 2kv GR42-2 grh110 GHM1540 GHM2143 B 473 M AC250 PT GHM3145
    Text: This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-5 This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor


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    PDF C02E-5. C02E5 C02E-5 GRM33 GRM36YGRM44-1 GRM39YGRM44-1 GRM36-019 GR36YGR44-1 GRM230Y5V475Z16 GR42-6 hr r 681k- 1kv GR40 MURATA HR R 221k 2kv GR42-2 grh110 GHM1540 GHM2143 B 473 M AC250 PT GHM3145

    NCO-150HB

    Abstract: No abstract text available
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0609 February 23, 2009 KODAK KAI-2001 IMAGE SENSOR 1600 H X 1200 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification .5


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    PDF MTD/PS-0609 KAI-2001 MTD/PS-0609 NCO-150HB

    t3d 66

    Abstract: T3D 64 737 s1g t3d 29 T3D 90
    Text: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE


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    PDF N2200 N3300 N4200 N4700 N5600 t3d 66 T3D 64 737 s1g t3d 29 T3D 90

    T3D DIODE

    Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
    Text: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns


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    PDF 0003b27 TMPD459 TMPD914 TMPD2835 TMPD2836 TMPD2837 TMPD2838 TMPD4148 TMPD4150 TMPD4153 T3D DIODE T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35

    2sd1047 equivalent

    Abstract: 2sb817 equivalent T3D 59 T3D 90 STK3042 stk3062 Sanyo STK 2SB631 T3D 47 STK3102
    Text: SANYO SEMICONDUCTOR CORP b3E D m 7 tlci707b OOllltH GTH TSAJ S T K Audio Power Amplifier STK3042 IH Series ★ 2 c h . / 1 package, ± Power Supply ★ V o l t a g e Amp I if ier ★ T H D = 0. 005% Maximum Ratings Recommended Operating Conditions m Mode 1


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    PDF STK3042 20kHz STK3042HI STK3062n STK3082IE STK3102DI STK3122m STK3152IH Manuf01-W\iâ 2SD894 2sd1047 equivalent 2sb817 equivalent T3D 59 T3D 90 stk3062 Sanyo STK 2SB631 T3D 47 STK3102

    Untitled

    Abstract: No abstract text available
    Text: 1997 • SHORT FORM CATALOG SENSITRON SEMICONDUCTOR BIPOLAR POWER TRANSISTORS NPN, TO-257 SHD4261 SHD4262 CONTIN. COLLECT. CURRENT COLLECT. TO EMITTER VOLTAGE COLLECT. TO BASE VOLTAGE EMITTER TO BASE VOLTAGE VCEO v CBO v EBO Volts Volts Volts Amps 80 80


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    PDF O-257) SHD4261 SHD4262Â 2N3421 2N6301 O-257 2N3741 2N6193 2N3721

    T3D 77

    Abstract: OM7612NM Adjustable negative Voltage Regulator 50v LM137HV T3D 42
    Text: OM7612NM SURFACE MOUNT 1.5 AMP HIGH VOLTAGE NEGATIVE ADJUSTABLE REGULATOR Three Terminal, High Voltage, Precision Adjustable Negative Voltage Regulator In Hermetic Surface Mount Package FEATURES • • H erm etic S u rfac e M o un t P a c k a g e A d justab le O utp u t V o ltag e


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    PDF OM7612NM LM137HV 534-5776FAX T3D 77 OM7612NM Adjustable negative Voltage Regulator 50v LM137HV T3D 42

    T3D 34

    Abstract: T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007
    Text: DISC CERAMIC CAPACITORS TUSONIX Ceramic capacitors, because of their inherent reliability, small size, low cost and wide choice of elec­ trical characteristics available, now outsell all other types combined. TUSONIX manufactures both fixed and variable ceramic capacitors in


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    PDF N1500 1B11R17 T3D 34 T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007

    Untitled

    Abstract: No abstract text available
    Text: For use with pin headers shown on pages F8 to FI 2. Can be fitted and removed by hand. An alternative on-board programming method to DIL switches. Open top for test probe. Choice of plating finish. PITCH J u m p e r S o c k e t O p e n Top 2mm M22 C onnectors


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    PDF M22-301 60liLl4 M22-218 M22-216 M22-21Ã M22-542 M22-634 M22-636 M22-201

    T3D 54 DIODE

    Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
    Text: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF bbSBT31 002Cm50 BUK453-100A BUK453-1OOB BUK453 -100A -100B T3D 54 DIODE Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE

    T3D 34

    Abstract: No abstract text available
    Text: High-reliability capacitors WIMA Snubber Cap High performance IGBT-snubber capacitors • Low inductive construction with end-surface contacts. ■ Double-sided metallization for high pulse ratings. ■ Low-loss polypropylene dielectric. ■ Internally series connected for high


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    PDF

    3dfx

    Abstract: AT3D 3Dfx Interactive promotion 6422 dac374 Alliance ProMotion 6422
    Text: 3D BH P r o M o tio n - A T JD A Integrated I 28-hit M M U1 A m -lcraior HrnMoi iun-ATJD Introduction Features Block diagram ❖ Fast 3D rendering - F ull h a rd w a re s e tu p - O n -c h ip D 3 D te x tu re p a le tte 3 D fx D ual d o i k THP g e n e ra to r


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    PDF 28-hit SAA711 3dfx AT3D 3Dfx Interactive promotion 6422 dac374 Alliance ProMotion 6422

    Marking 3D TO-236AB

    Abstract: T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77
    Text: SPRAGUE/SENICOND 8514019 GROUP TBD SPRAG UE. D • SS13Û5D □003t.3D S E M IC O N D S / IC S 93D 5 03630 T ^ { \ r ^ f O SMALL-OUTLINE D IO D ES Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C vf Device Type Description Marking BAR18 Schottky


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    PDF BAR18 BAS16 BAS19 BAS21 BAV701 238BMM 23881N Marking 3D TO-236AB T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77

    T3D 62

    Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66
    Text: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli­ cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator


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    PDF AT-41400 AT-41400 Rn/50 MM475flM 0017bE3 17L24 T3D 62 t3d 98 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66

    T3D DIODE

    Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are


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    PDF BDT65; BDT65B; T0-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 7z82329 T3D DIODE T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT64C

    ITT 7400

    Abstract: OZ 9906
    Text: CHDII H igh Density PCB C onnectors The Cannon High Density CHDII connector series Typically, the pin side of the connector is mounted supports the high I/O signals required on today's on the backplane utilizing press-fit compliant pin printed circuit boards.


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    PDF CHDI1130403 CHD130405-1 M772b5T ITT 7400 OZ 9906

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components KGF1191_ Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1191 is a tw o-stage small-signal am plifier, w ith frequencies ranging from the UHF band to the L band, that features low voltage operation, low -current dissipation, high gain, and high


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    PDF KGF1191_ KGF1191 0G22bà KGF1191 D022t

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs 1996.6.11 MÇM5V4R08 J-10,-12,-15 PRELIM I N A R Y Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R0SJ is a family o f 524288-word by 8-bit static


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    PDF M5V4R08 4194304-BIT 524288-WORD M5M5V4R08J 36-pin A0-18

    Untitled

    Abstract: No abstract text available
    Text: • International S Rectifier INTERNATIONAL RECTIFIER bSE SERIES MT-K Power Modules THREE PHASE AC SWITCH 50A 90A 100A Features ■ MÖ5SMS2 0Dlb554 45e! ■ INR Package fully compatible with the industry standard IN T-A -pak power modules series ■ High thermal conductivity package, electrically


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    PDF 0Dlb554 104MT. 554S2 001bS31

    Untitled

    Abstract: No abstract text available
    Text: 8-C H AN N EL SOURCE D R IV E R S This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series UDN2580A/LW source drivers can drive incandescent, LED, or vacuum


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    PDF UDN2580A/LW 2580/85L 25S0/85A UDN2580A UDN2580LW DSD433Ã 00D77b3 0S0433S UDN2580A B-1458A

    Diode T3D 57

    Abstract: T3D 67 diode T3D 66 diode T3D 58 diode T3D 78 diode T3D 68 diode HA-2520/T3D 39 diode U/25/20/TN26/15/850/Diode T3D 57
    Text: HV77 S u p e r te x in c . 32 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed*


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    PDF 64-Channel MIL-STD-883 HV7708DG HV7708PG HV7708X RBHV7708DG HV577. desig43/22 t29/36 t28/37 Diode T3D 57 T3D 67 diode T3D 66 diode T3D 58 diode T3D 78 diode T3D 68 diode HA-2520/T3D 39 diode U/25/20/TN26/15/850/Diode T3D 57

    4538B

    Abstract: Transistor 2Tz 2T2 transistor 74HC4538 M54HC4538 M54HC4538F1R M74HC4538 M74HC4538B1R M74HC4538C1R M74HC4538M1R
    Text: r z r z S G S -T H O M S O N M54HC4538 ^ 7 # MommiOTTECTOOS_ M74HC4538 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR HIGH SPEED = 25 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION STANDBY STATE Ice = 4 ^A (MAX.) ATT a = 25 'C ACTIVE STATE Ice = 200 nA (TYP.) AT Vcc = 5 V


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    PDF M54HC4538 M74HC4538 10LSTTL 4538B M54HC4538F1R M74HC4538M1R M74HC4538B1R M74HC4538C1R DD5S332 M54/M74HC4538 4538B Transistor 2Tz 2T2 transistor 74HC4538 M54HC4538 M74HC4538 M74HC4538C1R

    t3d 66 diode

    Abstract: FH043
    Text: TOSHIBA TMP87CH21C/M21C/P21C CMOS 8-Bit Microcontroller TMP87CH21CF, TMP87CM21CF, TMP87CP21CF TMP87CH21CDF, TMP87CM21CDF, TMP87CP21CDF The TMP87CH21C/M21C/P21C are the high speed and high performance 8-bit single chip microcomputers. These MCU contain, large ROM, RAM, input/output ports, LCD driver, 8-bit AD converter, four multi-function


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    PDF TMP87CH21C/M21C/P21C TMP87CH21CF, TMP87CM21CF, TMP87CP21CF TMP87CH21CDF, TMP87CM21CDF, TMP87CP21CDF TMP87CH21C/M21C/P21C TMP87CH21CF TMP87CH21CDF t3d 66 diode FH043