TIP600
Abstract: 2N6055 2N6056 2N6383 2N6384 2N6385 TIP601 TIP602 TIP605 TIP606
Text: TEXAS INSTR bH -COPTO DE~| 89 61 72 6 TEXAS INSTR O P T O □ □Bb'ìMb b 62C 36946 TIP600, TIP601, TIP602 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 “7" T-33-29 Designed For Complementary Use With TIP605, TIP606, TIP607
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TIP600,
TIP601,
TIP602
TIP605,
TIP606,
TIP607
2N6055,
2N6056,
2N6383,
2N6384,
TIP600
2N6055
2N6056
2N6383
2N6384
2N6385
TIP601
TIP605
TIP606
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TTL HEX INVERTER
Abstract: p26 ad IG 34 integrated cricuit Tck-25 sot203 2tCK-28 TRANSISTOR LWW 21 TRANSISTOR LWW 43 pcb80c31bh TRANSISTOR LWW 24
Text: r.-?. ^ D E V E L O P M E N T DATA PCB80C51BH-5 s PCB80C31 BH-5 This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. SINGLE-CHIP 8-BIT MICROCONTROLLER 3 0 M H z V E R S IO N DESCRIPTION IC20 In th e fo llo w in g te x t, th e generic te rm "P C B80C51 BH -5” is used to refer to b o th fa m ily members.
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PCB80C51BH-5
PCB80C31
PCB80C51
PCB80C51BH-4
TTL HEX INVERTER
p26 ad
IG 34 integrated cricuit
Tck-25
sot203
2tCK-28
TRANSISTOR LWW 21
TRANSISTOR LWW 43
pcb80c31bh
TRANSISTOR LWW 24
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PDF
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transistor tip601
Abstract: TIP601 TIP602 TIP600 2N6055 2N6056 2N6383 2N6384 2N6385 TIP605
Text: TEXAS INSTR bH -COPTO I> F | 896 1726 TEXAS INSTR O P T O □ □Bb' ìMb D 62C 36946 TIP600, TIP601, TIP602 N-P-N D A R LIN G TO N -C O N N EC TED SILICON POW ER TRANSISTORS REVISED OCTOBER 1 9 8 4 Designed For Complementary Use With TIP605, TIP606, TIP607
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OCR Scan
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TIP600,
TIP601,
TIP602
TIP605,
TIP606,
TIP607
2N6055,
2N6056,
2N6383,
2N6384,
transistor tip601
TIP601
TIP600
2N6055
2N6056
2N6383
2N6384
2N6385
TIP605
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PDF
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K511TB1
Abstract: K500TM133T k176kt1 KM155DA3 K155PE3 K500TM131M K511TB K155A K155Kn7 k589
Text: M H T E rP A il bH blE MMKPOCXEMbl IN T E G R A T E D M IC R O C IR C U IT S H acT b Part I I klH TETPA Jlb H b lE M M KPOCXEM bl U M O P O Bb lE IN TE G R A T ED D IGITAL M ICRO CIRCU ITS B c n e flC T B M e H e n p e p b iB H o r o c o B e p u u e H C T b o b 3 h h j i
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OCR Scan
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17max
25max
21max
59max
36max
K511TB1
K500TM133T
k176kt1
KM155DA3
K155PE3
K500TM131M
K511TB
K155A
K155Kn7
k589
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PDF
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MJE6045
Abstract: SE9302 texas instruments tip102 T0-22Q TIP101 TEXAS INSTRUMENTS TIP105 texas instruments tip100 transistor 1251 n-p-n 2N6388 TIP102
Text: bH TEXAS I N S T R -COPTO} 0D3bö7D □ 896-1726 TEXAS INSTR OPTO 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS JA N U A R Y 1 9 7 7 - R E V IS E D O C TO B E R 1 9 8 4 • Designed for Complementary Use with TIP105, TIP106, TIP107
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OCR Scan
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03kifi7D
TIP100,
TIP101,
TIP102
T-33-29
TIP105,
TIP106,
TIP107
MinhFEof200at4V
2N6045
MJE6045
SE9302
texas instruments tip102
T0-22Q
TIP101
TEXAS INSTRUMENTS TIP105
texas instruments tip100
transistor 1251 n-p-n
2N6388
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PDF
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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OCR Scan
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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PDF
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free computer hardware repairing notes
Abstract: DC TO 400 HZ INVERTER
Text: MRP - 4 D EVELO PM ENT DATA PCB80C51BH-4 PCB80C31 BH-4 This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. SINGLE-CHIP 8-BIT MICROCONTROLLER 24 M H z V E R S IO N IC20 INTEGRATED CIRCUITS D ESC R IPTIO N
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OCR Scan
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PCB80C51BH-4
PCB80C31
PCB80C51
appli400
free computer hardware repairing notes
DC TO 400 HZ INVERTER
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PDF
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Untitled
Abstract: No abstract text available
Text: nyNPNT^^Pibyis-i-Bh^yyz? CON NPN EPITAXIAL PLANAR TRANSISTOR a ft x m m o VHF P o w e r A m p l i f i e r A p p l i c a t i o n s • P 0 = 1 0 W M i n . ( VCC = 2 0 V , P j = 1 . 0 f f , INDUSTRIAL APPLICATIONS Unit : mm f = 2 7 0MHz ) Recommended fo r H igh G a in C la s s C Pow er
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2-10G1A
270MHz.
2sc2176
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PDF
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2N3725
Abstract: A13724
Text: ALLEGRO MICROSYSTEMS INC T3 D □S0433Ö 0DD3b51 S • ALGR T - q i- o l P R O C E S S BH B Process BHB NPN High-Speed Switching Transistor P ro c e ss B H B is a double-diffused epitaxial planar N PN silicon device designed to be used in high sp e e d , high-current sw itching applications.
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S0433Ã
0003b51
2N3725
A13724
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PDF
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BE555MN
Abstract: No abstract text available
Text: ANALOGUE;_ _ INTEGRATED C O N T R O L , TEMPERATURE 13 A 7 2 e 13 A 7 2 s X CIRCHTTS H im I N D U S T R I A L CONTROLLED TRANSISTOR S.A. ARRAYS Features : BA 726 Transistor pair offset voltage . - max.+3 Max. bias current # I,;=100uA : 6 Max. bias current @ I(‘.=10uA :
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100uA
MP-48
MP-24
BE555MN
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PDF
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balun transformer
Abstract: SD5532-21C
Text: Bai un T r a n s f o r m e r 0 Shape & Dimensions [Unit : mm] H Applications > Ideal for ues in double balanced mixers, and as broad band transformers, transistors and for impedance conversion. H Specifications > Transformer for frequency mixer / balun transformer
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SD5532-21C
SD6936-21C
SD6944-21C
SD5532-31C
SD6936-31C
SD6944-31C
SD5532-41C
SD6936-41C
SD6944-41C
SD5532-51C
balun transformer
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PDF
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Untitled
Abstract: No abstract text available
Text: MTP2955V P-Channel Enhancement Mode Field Effect Transistor Features General Description -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
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Original
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MTP2955V
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PDF
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FDP7060
Abstract: NDP4060L da2aa CBVK741B019 EO70 MTP2955V TO220 Semiconductor Packaging 9852
Text: MTP2955V P-Channel Enhancement Mode Field Effect Transistor Features General Description -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
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Original
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MTP2955V
FDP7060
NDP4060L
da2aa
CBVK741B019
EO70
MTP2955V
TO220 Semiconductor Packaging
9852
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PDF
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IR 9852
Abstract: 7w66 MTP2955V/SSP35n03
Text: MTP2955V* P-Channel Enhancement Mode Field Effect Transistor Features General Description -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
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Original
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MTP2955V
MTP2955V*
IR 9852
7w66
MTP2955V/SSP35n03
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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Original
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IRFR9024
IRFR9024*
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PDF
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Untitled
Abstract: No abstract text available
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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Original
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MTD3055V
MTD3055V*
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PDF
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Untitled
Abstract: No abstract text available
Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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Original
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MTD2955V
MTD2955V*
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PDF
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Mosfet FDD
Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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Original
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MTD3055V
Mosfet FDD
CBVK741B019
F63TNR
FDD6680
MTD3055V
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PDF
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a9hv
Abstract: No abstract text available
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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Original
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MTD2955V
a9hv
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PDF
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DSAS 13-0
Abstract: d92 02 a9hv
Text: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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Original
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IRFR9024
DSAS 13-0
d92 02
a9hv
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PDF
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BLV99
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL b5E ]> WM 711005b 0Gb30ûb 771 M P H I N BLV99 Jl U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use as a driver-stage in base stations in the 90 0 M H z communications band. Features: • emitter-ballasting resistors fo r an optim um temperature profile
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711055b
0Gb30flb
BLV99
OT172A1)
OT172A1.
711DaSb
BLV99
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PDF
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multi-emitter transistor
Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134
Text: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ | BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.
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711D82b
BLX96
multi-emitter transistor
SOT-48
BLX96
IEC134
BLX-96
IEC-134
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PDF
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ferroxcube wideband hf choke
Abstract: BLV99 002im3
Text: N AMER PHI LIP S/DISCRETE bTE D Jl • ^53*131 □ OE'ilfl'i 40Û BLV99 U.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tra n sisto r p rim a rily intended fo r use as a driver-stage in base stations in the 90 0 M H z co m m u n ica tio n s band.
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OCR Scan
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BLV99
OT172A1)
OT172A1.
960MHz;
ferroxcube wideband hf choke
BLV99
002im3
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PDF
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2N7073
Abstract: No abstract text available
Text: SILICONIX INC 33E » f i r Si fieo n ix • 0854735 001L.D52 ö ISIX 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 'TAr Id (A) 400 0.55 9.0 1 DRAIN 2 SOURCE 3 GATE Case Isolated
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flfi5473S
2N7073
O-254AA
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PDF
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