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Catalog Datasheet	MFG & Type	PDF	Document Tags
PA2465T1Q Abstract: No abstract text available Text: Preliminary Data Sheet PA2465T1Q R07DS0190EJ0100 Rev.1.00 Dec 06, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for	Original	PDF	PA2465T1Q R07DS0190EJ0100 PA2465T1Q

Catalog Datasheet

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PA2465T1Q

Abstract: No abstract text available
Text: Preliminary Data Sheet PA2465T1Q R07DS0190EJ0100 Rev.1.00 Dec 06, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for

Original

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PA2465T1Q R07DS0190EJ0100 PA2465T1Q