Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0500 Previous: REJ03G1275-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching
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Original
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RQK0302GGDQA
R07DS0305EJ0500
REJ03G1275-0400)
PLSP0003ZB-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0500 Previous: REJ03G1275-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching
|
Original
|
RQK0302GGDQA
R07DS0305EJ0500
REJ03G1275-0400)
PLSP0003ZB-A
|
PDF
|