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    Text: Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0600 Rev.6.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 92 mΩ typ (VGS = 10 V, ID = 1.3 A) • Low drive current • High speed switching • 4.5 V gate drive


    Original     		PDF RQK0302GGDQA R07DS0305EJ0600 PLSP0003ZB-A