R07DS0310EJ0300 Search Results

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Text: Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0300 Rev.3.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 173 mΩ typ.(at VGS = 4.5 V, ID = 0.8 A) • Low drive current • High speed switching • VDSS ≥ 60 V and capable of 2.5 V gate drive