Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJL6013DPE R07DS0437EJ0200 Previous: REJ03G1748-0100 Rev.2.00 Jun 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.66 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)
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Original
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RJL6013DPE
R07DS0437EJ0200
REJ03G1748-0100)
PRSS0004AE-B
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PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJL6013DPE R07DS0437EJ0200 Previous: REJ03G1748-0100 Rev.2.00 Jun 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.66 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)
|
Original
|
RJL6013DPE
R07DS0437EJ0200
REJ03G1748-0100)
PRSS0004AE-B
|
PDF
|